Low Noise, Cascadable Silicon Bipolar MMIC Amplifier ... - OM 3 BC
The INA series of MMICs is fabricated using HP's 10 GHz fT,. 25 GHz fMAX, ISOSATâ¢-I silicon bipolar process which uses nitride self-alignment, submicrometer.
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386
Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5␣ GHz • 10 dBm Typical P1dB at 1.5␣ GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package
Description The INA-10386 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC)
feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and moderate power. The INA series of MMICs is fabricated using HP’s 10 GHz fT, 25␣ GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Typical Biasing Configuration VCC Id = 45 mA nom.
RFC (Optional) Rbias
4
Cblock RF IN
Cblock 3
1 2
RF OUT Vd = 6.0 V
86 Plastic Package
2
INA-10386 Absolute Maximum Ratings Absolute Maximum[1]
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature
80 mA 750 mW +13 dBm 150°C –65 to 150°C
Thermal Resistance: θjc = 100°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 10 mW/°C for TC > 75°C.
INA-10386 Electrical Specifications[1], TA = 25°C Symbol
Parameters and Test Conditions: Vd = 6V, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 1.5 GHz
∆GP
Gain Flatness
f = 0.1 to 1.5 GHz
f3 dB
3 dB Bandwidth[2]
ISO VSWR
Reverse Isolation (|S12
| 2)
f = 2.0 GHz
Input VSWR
Units
Min.
Typ.
dB
23.0
26.0
dB
±1.0
GHz
1.8
dB
Max.
30
f = 0.1 to 2.0 GHz
1.5:1
Output VSWR
f = 0.1 to 2.0 GHz
NF
50 Ω Noise Figure
f = 1.5 GHz
1.5:1
P1 dB
Output Power at 1 dB Gain Compression
f = 1.5 GHz
dBm
10
IP3
Third Order Intercept Point
f = 1.5 GHz
dBm
23
tD
Group Delay
f = 1.5 GHz
psec
Id
Device Current
dV/dT
Device Voltage Temperature Coefficient
dB
mA mV/°C
3.8
250 35
45
55
+10
Notes: 1. The recommended operating current range for this device is 40 to 60 mA. Typical performance as a function of current is on the following page.
INA-10386 Part Number Ordering Information Part Number
Low Cost Plastic Package. MSA-0885 ... Output Power at 1 dB Gain Compression f = 1.0 GHz. dBm. 12.5. IP3. Third Order Intercept Point f = 1.0 GHz. dBm. 27.0.
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The MC54/74HC86 is identical in pinout to the LS86; this device is similar in function ..... M. N. 0.785. 0.280. 0.200. 0.020. 0.065. 0.015. 0.170. 15°. 0.040. 0.750.
at TA = 25 °C, unless otherwise specified. Parameter. Symbol. Value. Unit min. typ. max. DC Characteristics. Collector-emitter breakdown voltage. IC = 1 mA.
Jul 12, 1999 - 16 Bit Shift Register ... OSCOUT. 1. 2. Data 10. Clock 9. LE 11. fIN 8 f r. 13. FC. 12. ÏR. 16. DO. 5. ÏP ... the phase difference of fr and fp exits. 8.
Figure 1. Figure 2. 3 V. GND tf tr. INPUT. A OR B. OUTPUT. YA OR YB. 0.3 V ... 2.54 BSC. 0.100 BSC. H. 0.51. 1.27. 0.020. 0.050. J. 0.20. 0.30. 0.008. 0.012. K.
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