SIEGET 25 BFP420 NPN Silicon RF Transistor
For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability SIEGET 25-Line Siemens Grounded Emitter Transistor25 GHz fT-Line
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code (8-mm taped)
BFP420
AMs
Q62702-F1591
Pin Configuration Package 1 2 3 4 B E C E SOT343
Maximum Ratings Parameter
Symbol
Collector-emitter voltage
VCEO
4.5
V
Collector-base voltage
VCBO
15
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
35
mA
IB
3
mA
Ptot
160
mW
Junction temperature
Tj
150
°C
Ambient temperature range
TA
-65...+150°C
°C
Storage temperature range
Tstg
-65...+150°C
°C
Base current Total power dissipation, Ts ≤ 107°C
2)3)
Unit
Thermal Resistance Junction-soldering point
2)
Rth JS
270
K/W
1) For detailed information see chapter Package 2) TS is measured on the emitter lead at the soldering point to the pcb. 3) Ptot due to Maximum Ratings.
At typical Ts ≤ 80°C: Ptot = 250 mW due to thermical characteristics.
Semiconductor Group
1
Edition A06, 09/96
1)
SIEGET 25 BFP420
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA Collector-cutoff current VCB = 5 V, IE = 0 Emitter base cuttoff current VEB = 1.5 V, IC = 0
V(BR)CEO
4.5
5
6.5
V
ICBO
-
-
200
nA
IEBO
-
-
35
µA
DC current gain IC = 20 mA, VCE = 4 V
hFE
50
80
150
20
25
-
GHz
-
0.15
0.24
pF
-
0.41
-
pF
-
0.55
-
pF
-
1.05
1.4
dB
-
20
-
dB
14
17
-
dB
-
22
-
dBm
-
12
-
dBm
AC Characteristics Transition frequency fT IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance Ccb VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz Noise figure F IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain Gms1) IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS =ZSopt , ZL = ZLopt Insertion power gain |S21|2 IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intercept point at output IP3 IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt, ZL= ZLopt 1dB Compression point P-1dB IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt, ZL= ZLopt 1) Gms =
S 21 S12
Semiconductor Group
2
Edition A06, 09/96
SIEGET 25 BFP420
Total Power Dissipation versus Soldering Point Temperature
Permissible Pulse Power Dissipation versus On-Time (VCE0max = 4.5 V)
600 mW
Ptot
500
Ptot_max Ptot_DC
400
300
200 according maximum ratings
100
50
100
°C 150
tp
Ts
Transition Frequency versus Collector Current f = 2 GHz
Collector-base Capacitance versus Collector-base Voltage VBE = 0 V, f = 1MHz
30
0.3
GHz
pF Vce= 3 V, 4 V
fT
2V
25
Ccb 0.25
1V
20
0.2
15
0.15
0.5 V
10
0.1
5
0.05
10
20
mA
1
40
2
V
Ic
Semiconductor Group
4
Vcb
3
Edition A06, 09/96
SIEGET 25 BFP420
Power Gain versus Frequency VCE = 2 V , IC = 20 mA
Gma Gms |S21|²
Power Gain versus Collector Current VCE = 2 V
60
30
dB
dB
50
Gma 25 Gms
40
20
f= 1 GHz
2 GHz
3 GHz
Gms
30
15
4 GHz 5 GHz
Gma
20
10 6 GHz
|S21|²
10
5
0.1
1
GHz 10
10
20
mA
f
Ic
Power Gain versus Collector Voltage IC = 20 mA 30 dB
Gma Gms
f= 1 GHz
25 2 GHz
20 3 GHz
15
4 GHz 5 GHz
10 6 GHz
5
1
2
3
V
4
Vce
Semiconductor Group
40
4
Edition A06, 09/96
SIEGET 25 BFP420
Noise Figure versus Collector Current VCE = 2 V, ZS = ZSopt
Noise Figure versus Collector Current VCE = 2 V, f = 1.8 GHz
3
3 6.0 GHz
dB 2.5
F
dB
5.0 GHz
F
4.0 GHz
2.5
3.0 GHz 2.4 GHz
2
2
1.8 GHz Zs=50 Ohms
1.5
1.5 0.9 GHz Zsopt
1
1
0.5
0.5
10
20
mA
40
10
20
mA
40
Ic
Ic
Noise Figureversus Frequency VCE = 2 V, IC = 5 mA / 20 mA, ZS = ZSopt
Source Impedancefor min. Noise Figure versus Frequency VCE = 2 V, IC = 5 mA / 20 mA
3
+j50
dB
F
+j25
+j100
2.5 25
50
+j10
2
1.8 GHz
2.4 GHz
20 mA
5 mA
3 GHz
0
1.5
0.9 GHz
10
5 mA
5 GHz
1
-j10
0.5
100
4 GHz
20 mA
6 GHz
-j25
-j100 -j50
0.1
1
GHz 10
f
Semiconductor Group
5
Edition A06, 09/96
SIEGET 25 BFP420 Common Emitter S-Parameters ƒ S11 S21 GHz
MAG
S12
S22
ANG
MAG
ANG
MAG
ANG
MAG
ANG
-2.3 -25.1 -101.1 -146.2 173.5 149.4 130.0 104.8 78.5 67.6 62.0
37.62 36.30 23.41 13.99 7.18 4.77 3.52 2.27 1.51 1.25 1.04
178.3 164.7 121.0 96.0 70.8 52.6 36.8 8.2 -20.8 -34.4 -43.5
0.0011 0.0068 0.0262 0.0395 0.0664 0.0949 0.1206 0.1646 0.1800 0.1820 0.1800
94.4 82.5 61.7 57.8 54.0 47.1 38.5 18.9 -2.4 -13.0 -19.3
0.956 0.941 0.632 0.395 0.222 0.133 0.133 0.196 0.289 0.379 0.465
-0.6 -12.4 -47.2 -63.9 -87.3 -111.3 -158.5 142.0 99.3 84.1 76.6
-1.0 -11.6 -55.7 -99.1 -156.0 168.5 142.0 123.9 110.0
15.14 14.98 12.86 9.63 5.60 3.84 2.87 2.26 1.86
179.2 171.8 140.1 112.6 79.4 57.1 38.5 22.1 6.7
0.0012 0.0092 0.0398 0.0603 0.0798 0.0957 0.1121 0.1285 0.1442
83.4 84.1 62.8 46.5 34.6 29.8 25.1 19.4 13.1
0.988 0.982 0.857 0.647 0.401 0.267 0.207 0.150 0.173
-0.7 -6.5 -29.8 -48.6 -70.3 -84.2 -110.5 -137.3 -169.8
VCE = 2 V, IC = 20 mA 0.01 0.1 0.5 1.0 2.0 3.0 4.0 6.0 8.0 9.0 10.0
0.452 0.447 0.386 0.378 0.405 0.446 0.501 0.599 0.700 0.758 0.800
VCE = 2 V, IC = 5 mA
0.01 0.1 0.5 1.0 2.0 3.0 4.0 5.0 6.0
0.790 0.786 0.702 0.589 0.507 0.511 0.549 0.604 0.633
Common Emitter Noise Parameters ƒ Ga 1) Γopt Fmin 1) GHz
dB
RN
rn
F50Ω
2)
|S21| 2
dB
MAG
ANG
Ω
-
dB
dB
20.5 15.2 13.0 12.1 10.3 8.6 6.4
0.28 0.20 0.20 0.22 0.33 0.45 0.53
41.0 82.0 124.0 -175.0 -157.0 -142.0 -123.0
8.7 6.7 5.5 5.0 5.5 5.0 15.0
0.17 0.13 0.11 0.10 0.11 0.10 0.30
1.02 1.11 1.32 1.48 1.83 2.20 3.30
20.3 15.8 13.5 11.6 9.1 7.0 5.3
2)
VCE = 2 V, IC = 5 mA
0.9 1.8 2.4 3.0 4.0 5.0 6.0
0.90 1.05 1.25 1.38 1.55 1.75 2.20
1) Input matched for minimum noise figure, output for maximum gain
2) Z S=ZL=50Ω
For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a SIEMENS Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/357.htm
Semiconductor Group
6
Edition A06, 09/96
SIEGET 25 BFP420 SPICE Parameters: Transistor Chip Data T502 (Berkeley-SPICE 2G.6 Syntax): IS =
0.20045
fA
BF =
72.534
-
NF =
1.2432
-
VAF =
28.383
V
IKF =
0.48731
A
ISE =
19.049
fA
NE =
2.0518
-
BR =
7.8287
-
NR =
1.3325
-
VAR =
19.705
V
IKR =
0.69141
A
ISC =
0.019237
fA
NC =
1.1724
-
RB =
3.4849
OHM
IRB =
0.72983
mA
RBM =
8.5757
OHM
RE =
0.31111
OHM
RC =
0.10105
OHM
CJE =
1.8063
fF
VJE =
0.8051
V
MJE =
0.46576
-
TF =
6.7661
ps
XTF =
0.42199
-
VTF =
0.23794
V
ITF =
1.0
mA
PTF =
0
deg
CJC =
234.53
fF
VJC =
0.81969
V
MJC =
0.30232
-
XCJC =
0.3
-
TR =
2.3249
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3.0
-
FC =
0.73234
-
Tnom =
300
K
-
RS =
10
Ω
C'-E'- Diode Data (Berkeley-SPICE 2G.6 Syntax): IS =
3.5
fA
N=
1.02
All parameters are ready to use, no scaling is necessary.
Package Equivalent Circuit: CCB
LBO
LBI
transistor
B'
B
SOT343-3: C'
LCI
LCO
chip
C
E' CBE
C'-E'-diode
CCE
LEI
LBI = 0.47 nH LBO = 0.53 nH LEI = 0.23 nH LEO = 0.05 nH LCI = 0.56 nH LCO = 0.58 nH CBE = 136 fF CCE = 134 fF CCB = 6.9 fF
LEO
E valid up to 6 GHz The SOT343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil- und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG For more examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a SIEMENS Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/357.htm
Semiconductor Group
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Edition A06, 09/96
SIEGET 25 BFP420
For non-linear simulation: •
Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
•
If you need simulation of the reverse characteristics, add the diode with the C'-E'-diode data between collector and emitter.
•
Simulation of the package is not necessary for frequencies < 100 MHz. For higher frequencies add the wiring of the package equivalent circuit around the non-linear transistor and diode model.
Note: - This transistor is constructed in a common emitter configuration. This feature causes an additional, reverse biased diode between emitter and collector, which does not effect normal operation.
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
• •
Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on the copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
- The AC-Characteristics are verified by random sampling.
Semiconductor Group
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Edition A06, 09/96
SIEGET 25 BFP420
Package
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München Siemens AG 1994. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se,not for applications,processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.
Semiconductor Group
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Edition A06, 09/96
