BDW93/A/B/C
BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
VCEO
Parameter
Value
Units
: BDW93 : BDW93A : BDW93B : BDW93C
45 60 80 100
V V V V
Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C
45 60 80 100
V V V V
Collector-Base Voltage
IC
Collector Current (DC)
12
A
ICP
*Collector Current (Pulse)
15
A
IB
Base Current
0.2
A
PC
Collector Dissipation (TC=25°C)
80
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc
Parameter Thermal Resistance
©2000 Fairchild Semiconductor International
Junction to Case
Value 1.5
Units °C/W
Rev. A, February 2000
Symbol BVCEO(sus)
ICBO
ICEO
Parameter * Collector-Emitter Sustaining Voltage : BDW93 : BDW93A : BDW93B : BDW93C
Test Condition
Min.
IC = 100mA, IB = 0
45 60 80 100
Typ.
Max.
Units V V V V
Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C
VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0
100 100 100 100
µA µA µA µA
: BDW93 : BDW93A : BDW93B : BDW93C
VCE = 45V, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 100V, IB = 0
1 1 1 1
mA mA mA mA
2
mA
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE
* DC Current Gain
VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A
1000 750 100
20000
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 5A, IB = 20mA IC = 10A, IB = 100mA
2 3
V V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 5A, IB = 20mA IC = 10A, IB = 100mA
2.5 4
V V
VF
* Parallel Diode Forward Voltage
IF = 5A IF = 10A
2 4
V V
1.3 1.8
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
BDW93/A/B/C
Typical characteristics
100k
10
IC= 250 IB
VCE(sat) [V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = 3V
10k
1k
100 0.1
1
10
1
0.1 0.1
100
1
10
100
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
1000
20
f=1MHz
Cob [pF], OUTPUT CAPACTIANCE
IC [A], COLLECTOR CURRENT
VCE = 3 V 16
12
8
4
IE=0
100
10
0 0.0
0.8
1.6
2.4
3.2
1
4.0
10
VBE [V], BASE-EMITTER VOLTAGE
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector Output Capacitance
100
IC MAX.
PD [W], POWER DISSIPATION
100
IC [A], COLLECTOR CURRENT
100
5 ms 1 ms 100 us
10
DC
1
BDW93 BDW93A BDW93B
80
60
40
20
BDW93C 0
0.1 1
10
100
VCE [V], COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
0
25
50
75
100
125
150
175
200
o
TC [ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
BDW93/A/B/C
Package Demensions
TO-220 4.50 ±0.20 2.80 ±0.10 (3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP [2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters ©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™
HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6
SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™
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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
