BFR91 Vishay Telefunken
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling.
Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
Features D High power gain D Low noise figure D High transition frequency 3
2
94 9308
13623
1
BFR91 Marking: BFR91 Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol VCBO VCEO VEBO IC Ptot Tj Tstg
Value 20 12 2 50 300 150 –65 to +150
Unit V V V mA mW °C °C
Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu
Document Number 85030 Rev. 3, 20-Jan-99
Symbol RthJA
Value 300
Unit K/W
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BFR91 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio
Test Conditions VCE = 20 V, VBE = 0 VCB = 20 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 30 mA
Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 12 V hFE 25 50 150
Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain
Linear output voltage – two tone intermodulation test Third order intercept point
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Test Conditions VCE = 5 V, IC = 30 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 5 V, IC = 2 mA, f = 500 MHz, ZS = 50 W VCE = 5 V, IC = 30 mA, ZL = ZLopt, f = 500 MHz VCE = 5 V, IC = 30 mA, ZL = ZLopt, f = 800 MHz VCE = 5 V, IC = 30 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W VCE = 5 V, IC = 30 mA, f = 800 MHz
Symbol fT Ccb Cce Ceb F
Min
Typ 5 0.5 0.3 1.4 1.9
Max
Unit GHz pF pF pF dB
Gpe
18
dB
Gpe
13
dB
V1 = V2
240
mV
IP3
30
dBm
Document Number 85030 Rev. 3, 20-Jan-99
BFR91 Vishay Telefunken Common Emitter S–Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V
IC/mA
2
5
5
10
Document Number 85030 Rev. 3, 20-Jan-99
f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000
LIN MAG 0.84 0.61 0.44 0.33 0.32 0.32 0.37 0.42 0.46 0.66 0.37 0.25 0.20 0.21 0.23 0.29 0.34 0.38 0.46 0.22 0.16 0.15 0.18 0.20 0.26 0.31 0.35
S21 ANG deg –27.4 –72.6 –107.4 –152.3 –177.9 160.1 134.5 116.1 106.5 –39.9 –93.5 –131.7 –178.3 158.6 140.2 121.0 107.3 99.8 –53.5 –114.2 –155.9 159.4 141.2 126.9 111.8 102.4 96.4
LIN MAG 6.23 4.66 3.50 2.48 2.10 1.82 1.52 1.33 1.23 12.45 7.40 4.97 3.31 2.73 2.34 1.94 1.68 1.56 18.29 8.93 5.72 3.73 3.06 2.60 2.15 1.86 1.72
S12 ANG deg 156.5 122.5 100.9 79.1 68.3 57.7 44.4 32.4 25.8 146.3 109.5 91.2 73.7 64.5 55.5 43.9 33.0 26.3 136.4 101.4 86.2 70.8 62.7 54.3 43.5 33.1 26.9
LIN MAG 0.03 0.07 0.09 0.10 0.11 0.13 0.15 0.17 0.20 0.02 0.05 0.07 0.10 0.12 0.14 0.18 0.21 0.23 0.02 0.05 0.07 0.11 0.13 0.16 0.19 0.23 0.25
S22 ANG deg 73.9 52.9 44.4 41.4 41.9 42.8 44.3 45.1 44.4 70.2 56.7 55.6 55.6 54.8 52.9 49.6 46.1 43.0 69.5 64.5 64.3 62.1 59.5 56.4 51.3 46.3 42.4
LIN MAG 0.95 0.79 0.68 0.60 0.57 0.55 0.51 0.47 0.45 0.88 0.63 0.53 0.47 0.45 0.43 0.39 0.36 0.33 0.79 0.52 0.45 0.41 0.39 0.36 0.33 0.29 0.27
ANG deg –11.1 –24.2 –29.9 –35.6 –39.8 –44.4 –51.8 –60.0 –66.2 –17.6 –29.0 –30.9 –34.8 –38.5 –42.8 –49.9 –57.1 –62.6 –23.5 –29.9 –29.9 –33.4 –37.4 –41.8 –48.7 –55.6 –60.8
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BFR91 Vishay Telefunken S11 VCE/V
IC/mA
20
5
30
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f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000
LIN MAG 0.27 0.14 0.12 0.14 0.17 0.19 0.25 0.30 0.33 0.19 0.11 0.12 0.15 0.17 0.19 0.24 0.30 0.33
S21 ANG deg –71.3 –141.2 177.1 141.0 128.2 118.3 107.3 99.6 93.9 –83.9 –158.3 165.1 135.0 123.9 115.7 106.3 98.9 94.1
LIN MAG 23.16 9.82 6.15 3.97 3.24 2.76 2.27 1.97 1.82 24.93 10.08 6.27 4.03 3.29 2.79 2.30 1.99 1.84
S12 ANG deg 126.9 95.9 82.6 68.9 61.3 53.4 42.9 32.9 26.8 122.7 93.8 81.5 68.1 60.6 52.9 42.6 32.5 26.4
LIN MAG 0.02 0.04 0.07 0.11 0.14 0.16 0.20 0.24 0.26 0.02 0.04 0.07 0.11 0.14 0.17 0.20 0.24 0.26
S22 LIN MAG
ANG deg 72.1 71.4 70.0 65.5 62.0 58.0 52.0 46.3 42.0 74.1 74.2 72.0 66.6 62.6 58.6 52.3 46.5 42.1
0.69 0.44 0.39 0.36 0.34 0.32 0.29 0.25 0.23 0.64 0.42 0.37 0.35 0.33 0.31 0.28 0.24 0.22
ANG deg –28.0 –28.8 –27.9 –31.8 –36.2 –40.8 –47.7 –54.6 –59.6 –29.2 –27.4 –26.5 –30.7 –35.3 –40.0 –46.9 –53.6 –58.8
Document Number 85030 Rev. 3, 20-Jan-99
BFR91 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) C cb – Collector Base Capacitance ( pF )
P tot – Total Power Dissipation ( mW )
400 350 300 250 200 150 100 50 0 0
20
40
60
80
0.6 0.4 0.2 f=1MHz 0 0
5000
3.0 F – Noise Figure ( dB )
3.5
4000 3000 2000 VCE=5V f=500MHz
12
16
20
2.5 2.0 1.5 1.0
VCE=5V f=500MHz ZS=50W
0.5
0
0 0
12892
8
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
6000
1000
4
VCB – Collector Base Voltage ( V )
12893
Figure 1. Total Power Dissipation vs. Ambient Temperature
f T – Transition Frequency ( MHz )
0.8
100 120 140 160
Tamb – Ambient Temperature ( °C )
12845
1.0
10
20
30
40
50
IC – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Document Number 85030 Rev. 3, 20-Jan-99
0 12894
5
10
15
20
25
30
IC – Collector Current ( mA )
Figure 4. Noise Figure vs. Collector Current
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BFR91 Vishay Telefunken VCE = 5 V, IC = 30 mA , Z0 = 50 W S12
S11 j
90° 120°
j0.5
60°
j2 150°
j0.2
ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ
1.0
1.0
0
0.2
0.5
1
30° 2.0 GHz
j5
2.0 GHz
2
1
5
0.3
0.1
180°
0.2
0.4
0°
0.1
–j0.2
–j5 –150° –j0.5
–30°
–j2 –120° –j
13 514
–60° –90°
13 515
Figure 5. Input reflection coefficient
Figure 7. Reverse transmission coefficient
S21
S22 0.1
j
90° 60° j0.5
150°
j2
30°
0.3
j0.2 0.5
180°
2.0 GHz
8
16
0°
0
j5
ÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁ 0.2
0.5
1
2.0 GHz
2 0.5
1
5
0.1
–j0.2 –150°
–j5
–30° –j0.5 –120°
13 516
–90°
Figure 6. Forward transmission coefficient
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–j2
–60° 13 517
–j
Figure 8. Output reflection coefficient
Document Number 85030 Rev. 3, 20-Jan-99
BFR91 Vishay Telefunken Dimensions of BFR91 in mm
96 12244
Document Number 85030 Rev. 3, 20-Jan-99
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BFR91 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85030 Rev. 3, 20-Jan-99
