NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
PIN
DESCRIPTION Code: P1p
1
base
2
emitter
3
collector
3
fpage
1
2
Top view
MSB003
PNP complement is BFT92. Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
IC
DC collector current
−
25
mA
Ptot
total power dissipation
up to Ts = 95 °C; note 1
−
300
mW
fT
transition frequency
IC = 14 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C
5
−
GHz
Cre
feedback capacitance
IC = 2 mA; VCE = 10 V; f = 1 MHz
0.4
−
pF
GUM
maximum unilateral power gain
IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C
18
−
dB
F
noise figure
IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt.
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
25
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 95 °C; note 1
Note 1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
THERMAL RESISTANCE SYMBOL Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
THERMAL RESISTANCE
up to Ts = 95 °C; note 1
260 K/W
Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
−
−
50
UNIT
ICBO
collector cut-off current
hFE
DC current gain
IC = 14 mA; VCE = 10 V
40
90
−
fT
transition frequency
IC = 14 mA; VCE = 10 V; f = 500 MHz
−
5
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.75
−
pF
IE = 0; VCB = 10 V
nA
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
0.8
−
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C
−
0.4
−
pF
GUM
maximum unilateral power gain (note 1)
IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C
−
18
−
dB
F
noise figure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt.
−
2.4
−
dB
Vo
output voltage
−
150
−
mV
note 3
Notes
2
S 21 - dB˙ 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 2. Crystal mounted in a SOT37 envelope (BFR90). 3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 495.25 MHz; Vq = Vo −6 dB; fq = 503.25 MHz; Vr = Vo −6 dB; fr = 505.25 MHz; measured at f(p+q−r) = 493.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA425 - 1
400 handbook, halfpage P tot (mW)
24 V
handbook, halfpage
L3
390 Ω
820 Ω
300
3.9 kΩ 300 Ω
L2
680 pF
650 pF
L1 75 Ω input
200 75 Ω output
680 pF DUT
100
16 Ω MEA446
0 0
50
100
150
200 Ts ( o C)
L2 = L3 = 5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm.
Fig.2 Intermodulation distortion test circuit.
Fig.3 Power derating curve.
MEA428
MCD074
120
1
handbook, halfpage
handbook, halfpage
Cc (pF)
h FE
0.8
80 0.6
0.4 40 0.2
0
0 0
10
20
I C (mA)
0
30
10
VCE = 10 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.4
Fig.5
DC current gain as a function of collector current.
September 1995
4
V CB (V)
20
Collector capacitance as a function of collector-base voltage.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA444
MEA427
6
30
handbook, halfpage
handbook, halfpage
fT (GHz)
gain (dB)
4
20
G UM 2
10 I S12 I 2
0 0
10
20
I C (mA)
0 2 10
30
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.6
10 3
104
f (MHz)
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Transition frequency as a function of collector current.
Fig.7 Gain as a function of frequency.
MEA465
6
MEA424
5
handbook, halfpage
handbook, halfpage
F (dB)
F (dB)
5
4
4 3 3 2 2 1
1
0 10 –1
1
f (GHz)
0 0
10
5
10
15
20 I C (mA)
IC = 2 mA; VCE = 10 V; Tamb = 25 °C; Zs = opt.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt.
Fig.8
Fig.9
Minimum noise figure as a function of frequency.
September 1995
5
Minimum noise figure as a function of collector current.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA426
handbook, halfpage
40 BS (mS) 20 F = 5 dB 4.5 0 3
3.5
4
2.4 20
40 0
20
40
60
80
100 G S (mS)
IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.10 Noise circle figure.
September 1995
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
1
handbook, full pagewidth
0.5
2
0.2
5 10
+j 0.2
0
0.5
1
2
5
10
∞
1000 MHz 800 500
–j
10 200
0.2
5
2
0.5
MEA429
1 IC = 14 mA; VCE = 10 V; Tamb = 25 °C. Zo = 50 Ω.
Fig.11 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
60°
200
150°
30°
500 800
+ϕ
1000 MHz
180°
20
12
0°
4
−ϕ
30°
150°
60°
120° 90°
MEA431
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.12 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
90°
handbook, full pagewidth
120°
60° 1000 MHz 800
150°
30°
500 200 180°
+ϕ 0.05
0°
0.15
0.10
−ϕ
30°
150°
60°
120°
MEA432
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.13 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5 10
+j 0
0.2
0.5
1
2
5
10
∞
–j 800 500 1000 MHz
0.2
10 200 5
2
0.5 1
MEA430
IC = 14 mA; VCE = 10 V; Tamb = 25 °C. Zo = 50 Ω.
Fig.14 Common emitter output reflection coefficient (S22).
DEFINITIONS Data Sheet Status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Collector Cut-off. Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V. 10. 10. mA. mA. ICBO. Collector Cut-off. Current (IE = 0) for 2N3771 VCB = 50 ...
63 ~ 160. 100 ~ 250. BD135/137/139. Medium Power Linear and Switching. Applications .... provided in the labeling, can be reasonably expected to result in ...
Apr 17, 1996 - Applications. RF-amplifier up to GHz range specially for wide band an- tenna amplifier. Features. D High power gain. D Low noise figures.
mA. W. W. °C. °C. Characteristic. Symbol. Test Conditions. Min. Max. Unit. Collector Emitter Sustaining Voltage. Collector Cutoff Current. Collector Cutoff Current.
designed for UHF linear and largeâsignal amplifier applications. ⢠Specified 12.5 Volt, 870 MHz Characteristics â. Output Power = 0.5 Watts. Minimum Gain ...
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is ... not intended to be an exhaustive list of all such trademarks.
Aug 10, 2004 - Medium power switching and muting. ⢠Amplification. ⢠Portable radio output amplifier (class-B, push-pull). DESCRIPTION. NPN transistor in a ...
800. VCE (sat). Collector-Emitter Saturation Voltage. IC=10mA, IB=0.5mA ... 100. 1000. 10000. IC = 10 IB. VCE(sat). VBE(sat). VBE. (s a t), V. CE. (s a t)[m. V.
Oct 11, 2004 - µA. IEBO emitter-base cut-off current. VEB =3V; IC =0 A. â. 10. nA. hFE. DC current gain. VCE = 10 V; IC = 0.1 mA. 35. â. VCE = 10 V; IC = 1 mA.
SWITCH MODE POWER SUPPLIES. DESCRIPTION. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL ...
DC TO DC CONVERTER. SC-65. â High Current Capability. â High Power Dissipation. â Complementary to ... Collector-Emitter Voltage. Emitter-Base voltage.
62.5. oC/W. oC/W. ELECTRICAL CHARACTERISTICS (Tcase = 25 o. C unless ... Collector-Emitter. Saturation Voltage. IC =3A. IB = 0.6 A. IC =4A. IB = 0.8 A.
The HyperGain® HG2458-08LP is a high performance ultra wide band log periodic antenna designed to operate from 2.3 GHz to. 6.5 GHz. This Ultra-Wideband ...
at TA = 25 °C, unless otherwise specified. Parameter. Symbol. Value. Unit min. typ. max. DC Characteristics. Collector-emitter breakdown voltage. IC = 1 mA.
