Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0885

purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

Features • Usable Gain to 6.0␣ GHz • High Gain: 32.5 dB Typical at 0.1␣ GHz 22.5 dB Typical at 1.0␣ GHz • Low Noise Figure: 3.3␣ dB Typical at 1.0␣ GHz • Low Cost Plastic Package

Description The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general

The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Typical Biasing Configuration R bias VCC > 10 V

RFC (Optional) 4 C block

C block 3

IN

1

2

5965-9545E

OUT

MSA

Vd = 7.8 V

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85 Plastic Package

MSA-0885 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature

Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to 150°C

Thermal Resistance[2,4]: θjc = 130°C/W

Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.7 mW/°C for TC > 85°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications[1], TA = 25°C Symbol GP

VSWR

Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω Power Gain (|S21| 2)

f = 0.1 GHz f = 1.0 GHz

Units

Min.

Typ.

21.0

32.5 22.5

dB

Input VSWR

f = 0.1 to 3.0 GHz

1.9:1

Output VSWR

f = 0.1 to 3.0 GHz

1.6:1

NF

50 Ω Noise Figure

f = 1.0 GHz

dB

3.3

P1 dB

Output Power at 1 dB Gain Compression

f = 1.0 GHz

dBm

12.5

IP3

Third Order Intercept Point

f = 1.0 GHz

dBm

27.0

tD

Group Delay

f = 1.0 GHz

psec

125

Vd

Device Voltage

dV/dT

Device Voltage Temperature Coefficient

V mV/°C

6.2

7.8

Max.

9.4

–17.0

Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page.

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MSA-0885 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA) S21

S11

S12

S22

Freq. GHz

Mag

Ang

dB

Mag

Ang

dB

Mag

Ang

Mag

Ang

k

0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0

.64 .58 .44 .36 .31 .27 .24 .26 .29 .34 .38 .42 .48 .60

–21 –39 –65 –82 –95 –105 –125 –147 –159 –175 172 161 135 102

32.5 31.3 28.7 26.3 24.3 22.5 19.3 16.7 14.9 13.1 11.6 10.1 7.7 5.5

42.29 36.89 27.20 20.57 16.31 13.36 9.24 6.82 5.57 4.51 3.80 3.21 2.43 1.88

160 144 120 106 96 87 71 56 48 37 25 14 –7 –29

–36.5 –32.8 –29.4 –27.2 –25.2 –24.2 –21.4 –19.7 –18.4 –17.7 –16.9 –16.3 –15.6 –14.9

.015 .023 .034 .044 .055 .061 .085 .103 .120 .130 .144 .153 .167 .179

40 50 54 53 53 51 50 47 44 42 37 33 24 17

.61 .54 .42 .33 .28 .25 .18 .15 .12 .09 .06 .04 .09 .08

–24 –45 –77 –98 –115 –129 –153 –173 180 165 172 –139 –90 –140

0.78 0.67 0.69 0.77 0.83 0.87 0.96 0.98 1.00 1.03 1.04 1.06 1.09 1.06

Note: 1. A model for this device is available in the DEVICE MODELS section.

Typical Performance, TA = 25°C (unless otherwise noted) 35

40

30 Gain Flat to DC

30

0.1 GHz 30 0.5 GHz

20 15

G p (dB)

25 Id (mA)

G p (dB)

25

35 TC = +85°C TC = +25°C TC = –25°C

20

1.0 GHz 20 2.0 GHz 15

10 10

0

0 0.1

0.3 0.5

1.0

3.0

6.0

0

2

4

8

5 10

10

4.5

12 11

4

12

4.0

I d = 36 mA NF (dB)

P1 dB

P1 dB (dBm)

13

10

–25

0

+25

+55

+85

3.5

3.0 6

2

I d = 20 mA I d = 36 mA I d = 40 mA

8

NF

3

40

Figure 3. Power Gain vs. Current.

14

GP

21

30

Figure 2. Device Current vs. Voltage.

I d = 40 mA

22

20

I d (mA)

16

23

P1 dB (dBm)

Gp (dB)

Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA.

6 Vd (V)

FREQUENCY (GHz)

NF (dB)

4.0 GHz

10

5

I d = 20 mA

4 0.1

2.5 0.2 0.3

0.5

1.0

2.0

4.0

0.1

0.2 0.3

0.5

1.0

2.0

TEMPERATURE (°C)

FREQUENCY (GHz)

FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=36mA.

Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

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85 Plastic Package Dimensions .020 .51 GROUND

4 0.143 ± 0.015 3.63 ± 0.38

1 RF INPUT

RF OUTPUT AND BIAS

2

GROUND

.060 ± .010 1.52 ± .25

3

A08

45°

.085 2.15 5° TYP.

.07 0.43

Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .006 ± .002 .15 ± .05

.286 ± .030 7.36 ± .76

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