Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0685

Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 18.5␣ dB Typical at 0.5 GHz • Low Noise Figure: 3.0 dB Typical at 0.5 GHz • Low Cost Plastic Package

Description The MSA-0685 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost

plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Typical Biasing Configuration R bias VCC > 5 V

RFC (Optional) 4 C block

C block 3

IN

1

2

5965-9587E

OUT

MSA

Vd = 3.5 V

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85 Plastic Package

MSA-0685 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature

Absolute Maximum[1] 50 mA 200 mW +13 dBm 150°C –65 to 150°C

Thermal Resistance[2,4]: θjc = 110°C/W

Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 9.1 mW/°C for TC > 128°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications[1], TA = 25°C Symbol GP

Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω Power Gain (|S21| 2)

f = 0.1 GHz

Units

Gain Flatness

f3 dB

3 dB Bandwidth

VSWR

f = 0.1 to 0.5 GHz

Typ.

17.0

18.5

dB

f = 0.5 GHz ∆GP

Min.

20.0

dB

± 0.7

GHz

0.8

Input VSWR

f = 0.1 to 1.5 GHz

1.5:1

Output VSWR

f = 0.1 to 1.5 GHz

1.4:1

NF

50 Ω Noise Figure

f = 0.5 GHz

dB

3.0

P1 dB

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

2.0

IP3

Third Order Intercept Point

f = 0.5 GHz

dBm

14.5

tD

Group Delay

f = 0.5 GHz

psec

200

Vd

Device Voltage

dV/dT

Device Voltage Temperature Coefficient

V mV/°C

Max.

2.8

3.5

4.2

–8.0

Note: 1. The recommended operating current range for this device is 12 to 25 mA. Typical performance as a function of current is on the following page.

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MSA-0685 Typical Scattering Parameters (Z = 50 Ω, TA = 25°C, Id = 16 mA) S11

S21

S12

S22

Freq. GHz

Mag

Ang

dB

Mag

Ang

dB

Mag

Ang

Mag

Ang

k

0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

.04 .02 .02 .03 .05 .07 .10 .13 .21 .29 .34 .41 .46 .49 .52 .54

171 –180 –143 –113 –105 –101 –111 –118 –140 –163 –176 169 157 146 135 123

20.1 29.8 19.4 19.1 18.7 18.2 17.3 16.4 14.1 12.0 10.3 8.7 7.2 6.1 5.0 4.1

10.09 9.75 9.38 8.99 8.57 8.14 7.32 6.57 5.06 3.98 3.26 2.71 2.31 2.01 1.77 1.60

171 161 153 145 138 131 119 107 84 65 55 42 30 18 7 –3

–22.5 –22.4 –22.2 –21.8 –21.3 –20.7 –19.7 –18.8 –17.1 –15.8 –15.2 –14.8 –14.2 –13.8 –13.4 –12.9

.075 .076 .077 .081 .086 .092 .103 .115 .140 .163 .174 .181 .194 .203 .215 .226

5 10 15 17 21 25 28 28 28 26 28 25 22 20 17 15

.04 .05 .07 .08 .10 .11 .13 .14 .15 .16 .16 .15 .13 .10 .09 .09

–30 –56 –76 –91 –104 –116 –134 –150 180 157 150 143 144 156 173 –178

1.04 1.04 1.05 1.04 1.04 1.03 1.01 0.99 1.00 1.02 1.06 1.10 1.11 1.13 1.14 1.14

Note: 1. A model for this device is available in the DEVICE MODELS section.

Typical Performance, TA = 25°C (unless otherwise noted) 21

25

25

TC = +85°C TC = +25°C 20 TC = –25°C

Gain Flat to DC 18

0.1 GHz 0.5 GHz 20 1.0 GHz

9

15

G p (dB)

12

Id (mA)

G p (dB)

15

10

15 2.0 GHz 10

6 5

5

3 0

0 0.1

0.3 0.5

1.0

3.0

6.0

0 0

1

2

15

20

25

30

I d (mA)

Figure 2. Device Current vs. Voltage.

Figure 3. Power Gain vs. Current.

19

4.0 I d = 30 mA

GP

5

P1 dB (dBm)

17

8

5

4

NF

4

3

P1 dB

3

2

2

1

1

0

0

–25

0 +25

+55

+85

4

3.5 NF (dB)

18

NF (dB)

Gp (dB)

10

5

12

20

P1 dB (dBm)

4

Vd (V)

FREQUENCY (GHz)

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 16 mA.

3

I d = 20 mA

I d = 16 mA

3.0

2.5

0

I d = 12 mA I d = 16 mA, 30 mA I d = 20 mA

I d = 12 mA -4 0.1

2.0 0.2 0.3

0.5

1.0

2.0

4.0

0.1

0.2 0.3

0.5

1.0

2.0

4.0

TEMPERATURE (°C)

FREQUENCY (GHz)

FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 0.5 GHz, Id=16mA.

Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

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85 Plastic Package Dimensions .020 .51 GROUND

4 0.143 ± 0.015 3.63 ± 0.38

1 RF INPUT

RF OUTPUT AND BIAS

2

GROUND

.060 ± .010 1.52 ± .25

3

A06

45°

.085 2.15 5° TYP.

.07 0.43

Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .006 ± .002 .15 ± .05

.286 ± .030 7.36 ± .76

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