high efficiency fast recovery rectifier diodes - Matthieu Benoit

Unit. VRRM. Repetitive peak reverse voltage. 200. V. IF(RMS). RMS forward ... Symbol. Test Conditions. Min. Typ. Max. Unit. IR *. Tj = 25°C. VR = VRRM. 10. µA.
354KB taille 8 téléchargements 217 vues
BYW80F/FP-200

®

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV)

20 A

VRRM

200 V

Tj (max)

150°C

VF (max)

0.85 V

trr (max)

35 ns

K

A

TO-220AC BYW80-200

FEATURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability Insulated packages: ISOWATT220AC / TO-220FPAC: Insulation voltage = 2000 V DC Capacitance = 12 pF

K





e t le



o s b O -

DESCRIPTION Single chip rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AC, ISOWATT220AC and TO-220FPAC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

) s ( ct

) s t(

ISOWATT220AC BYW80F-200

c u d





A

o r P

A K

TO-220FPAC BYW80FP-200

u d o

r P e

ABSOLUTE MAXIMUM RATINGS

t e l o

Symbol VRRM

s b O

IF(RMS) IF(AV)

Parameter

Value

Unit

Repetitive peak reverse voltage

200

V

RMS forward current

20

A

10

A

Average forward current δ = 0.5

TO-220AC

ISOWATT220AC Tc=95°C TO-220FPAC

IFSM

Surge non repetitive forward current

Tstg

Storage and junction temperature range

Tj

Maximum operating temperature range

January 2002 - Ed: 3G

Tc=120°C

tp=10ms sinusoidal

10 100 - 65 to + 150 + 150

A °C °C

1/7

BYW80F/FP-200 THERMAL RESISTANCE Symbol Rth (j-c)

Parameter Junction to case

Value

Unit

TO-220AC

2.5

°C/W

ISOWATT220AC / TO-220FPAC

4.7

ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR *

Test Conditions Tj = 25°C

Min.

Typ.

VR = VRRM

Tj = 100°C VF **

mA

) s t(

IF = 15 A

Tj = 25°C

IF = 15 A

c u d

(s)

Tj = 25°C

V

1.15

e t le

o s b O -

Test Conditions

ct

o r P

Min.

Typ.

Max.

Unit ns

IF = 0.5A IR = 1A

Irr = 0.25A

25

IF = 1A VR = 30V

dIF/dt = -50A/µs

35

Tj = 25°C

IF = 1A VFR = 1.1 x VF

tr = 10 ns

15

ns

Tj = 25°C

IF = 1A

tr = 10 ns

2

V

u d o

2/7

1

Tj = 125°C

Symbol

r P e

t e l o

s b O

µA

1.05

RECOVERY CHARACTERISTICS

VFP

10

0.85

To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.027 x IF2(RMS)

tfr

Unit

IF = 7 A

Tj = 125°C

Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 %

trr

Max.

BYW80F/FP-200 Fig. 1: Average forward power dissipation versus average forward current

14

P F(av)(W)

Fig. 2: Peak current versus form factor

200 =0.5

=0.2

=0.1

12

=1

IM(A) T

175

=0.05

150

10

I

P=10W

125

8

M

=tp/T tp

100 6

T

4

50

2

I F(av)(A)

0 0

1

2

3

4

5

6

7

=tp/T

8

tp

9 10 11 12 13 14

0 0

1.0

VFM(V)

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

K Zth(j-c) (tp. K = Rth(j-c)

Tj=125 oC

1.4

=0.2

1.0

)

e t le

=0.5

0.5

1.2

) s t(

c u d

o r P

o s b O =0.1

0.8 0.6

0.2

0.4 0.2

) s ( ct

IFM(A)

0.0

0.1

1

10

o r P e

100

du

Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AC / TO-220FPAC)

t e l o

K

Zth(j-c) (tp. K = Rth(j-c)

bs

0.8

O

T

Single pulse

=tp/T

tp(s)

0.1 1.0E-03

1.0E-02

1.0E-01

100 90 80

=0.5

70 Tc=25 o C

50 =0.2

30 IM 20

Single pulse

=0.1

10

tp(s) 1.0E-02

Tc=75 o C

40 T

0 1.0E-03

1.0E+00

Fig. 6: Non repetitive surge peak forward current versus overload duration (TO-220AC)

60

0.4

tp

IM(A)

)

0.6

0.2

1

Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC)

1.8 1.6

P=15W

25

Fig. 3: Forward voltage drop versus forward current (maximum values)

1

P=5W

75

1.0E-01

=tp/T

1.0E+00

tp

1.0E+01

0 0.001

Tc=120 o C

t =0.5

t(s) 0.01

0.1

1

3/7

BYW80F/FP-200 Fig. 7: Non repetitive surge peak forward current versus overload duration (ISOWATT220AC / TO-220FPAC)

80

IM(A)

12

I F(av)(A)

11

70

Rth(j-a)=Rth(j-c)

10 9

60

8

50

Rth(j-a)=15 o C/W

7 Tc=25 o C

40

6 =0.5

5

30 20

Fig. 8: Average current versus ambient temperature (duty cycle : 0.5) (TO-220AC)

Tc=50 oC

IM

T

4 3

Tc=95 o C

t =0.5

10 0 0.001

2

t(s)

0.01

0.1

1

10

Fig. 9: Average current versus ambient temperature (duty cycle: 0.5) (ISOWATT220AC / TO-220FPAC) I F(av)(A) 12 11 Rth(j-a)=Rth(j-c) 10 9 8 Rth(j-a)=15 o C/W 7 6 =0.5 5 T 4 3 2 1 =tp/T tp Tamb( o C) 0 0 20 40 60 80 100 120 140

o r P e

t e l o

bs

90% CONFIDENCE

Tj=125 o C

20

Tamb( o C)

tp

40

60

80

100

c u d

4/7

140

160

) s t(

o r P

o s b O -

VR(V)

160

Fig. 12: Peak reverse current versus dIF/dt.

I RM(A) IF=IF(av)

90% CONFIDENCE

Tj=125 o C

O

dIF/dt(A/us)

120

Fig. 10: Junction capacitance versus reverse voltage applied (Typical values)

e t le

Fig. 11: Recovery charges versus dIF/dt.

QRR(nC)

=tp/T

0 0

C(pF)

) s ( ct

du

1

dIF/dt(A/us)

IF=IF(av)

BYW80F/FP-200 Fig. 13: Dynamic parameters versus junction temperature O

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

IRM

QRR

Tj( o C)

c u d

PACKAGE MECHANICAL DATA TO-220AC (JEDEC outline)

e t le

REF.

A

H2 C

) s ( ct

L5 ØI

u d o L6

L2

r P e

L9

s b O

t e l o

F1

D

M

F

E G

Millimeters

Inches

Min.

Max.

Min.

Max.

A

4.40

4.60

0.173

0.181

C

1.23

1.32

0.048

0.051

D

2.40

2.72

0.094

0.107

E

0.49

0.70

0.019

0.027

F

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.066

G

4.95

5.15

0.194

0.202

H2

10.00

10.40

0.393

0.409

L2

L4

o r P

DIMENSIONS

so

b O L7

) s t(

16.40 typ.

0.645 typ.

L4

13.00

14.00

0.511

0.551

L5

2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.20

6.60

0.244

0.259

L9

3.50

3.93

0.137

0.154

M Diam. I

2.6 typ. 3.75

3.85

0.102 typ. 0.147

0.151

5/7

BYW80F/FP-200 PACKAGE MECHANICAL DATA ISOWATT220AC (JEDEC outline) A H

DIMENSIONS

B

REF. Diam

Min.

L6 L7

L2 L3

F1

F

Millimeters

D

E

G

A B D E F F1 G H L2 L3 L6 L7 Diam

4.40 4.60 2.50 2.70 2.40 2.75 0.40 0.70 0.75 1.00 1.15 1.70 4.95 5.20 10.00 10.40 16.00 typ. 28.60 30.60 15.90 16.40 9.00 9.30 3.00 3.20

e t le

PACKAGE MECHANICAL DATA TO-220FPAC

o s b O REF.

(t s) A

H

B

o r P e

c u d Dia

L6

t e l o

L2 L3

bs

O

L5 D F1

L4

F G1 G

6/7

L7

E

A B D E F F1 G G1 H L2 L3 L4 L5 L6 L7 Dia.

Max.

Inches Min.

0.173 0.181 0.098 0.106 0.094 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.195 0.205 0.394 0.409 0.63 typ. 1.125 1.205 0.626 0.646 0.354 0.366 0.118 0.126

c u d

o r P

Max.

) s t(

DIMENSIONS Millimeters Min.

Max.

4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20

Inches Min.

Max.

0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126

BYW80F/FP-200

Type BYW80-200 BYW80F-200 BYW80FP-200 ■











Marking

Package

Weight

Base Qty

Delivery mode

BYW80-200

TO-220AC

2.3 g

50

Tube

BYW80F-200

ISOWATT220AC

2g

50

Tube

BYW80FP-200

TO-220FPAC

1.8 g

50

Tube

Cooling method: by conduction (C) Recommended torque value (ISOWATT220AC, TO-220FPAC): 0.55 nm Maximum torque value (ISOWATT220AC, TO-220FPAC): 0.7 Nm Recommended torque value (TO-220AC): 0.8 Nm Maximum torque value (TO-220AC): 1.0 Nm Epoxy meets UL94, V0

c u d

e t le

) s ( ct

) s t(

o r P

o s b O -

u d o

r P e

t e l o

s b O

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7