Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery FEATURES
BY329F, BY329X series
SYMBOL
QUICK REFERENCE DATA VR = 800 V/ 1000 V/ 1200 V
• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab
k 1
IF(AV) = 8 A
a 2
IFSM ≤ 65 A trr ≤ 145 ns
GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY329F series is supplied in the conventional leaded SOD100 package. The BY329X series is supplied in the conventional leaded SOD113 package.
PINNING PIN
SOD100
SOD113
DESCRIPTION case
1
cathode
2
anode
tab
case
isolated 1
2
1
2
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL
PARAMETER
VRSM VRRM VRWM
Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage
IF(AV)
Average forward current1
CONDITIONS
MIN.
BY329F / BY329X
IF(RMS) IFRM
RMS forward current Peak repetitive forward current
IFSM
Peak non-repetitive forward current.
I2t Tstg Tj
I2t for fusing Storage temperature Operating junction temperature
square wave; δ = 0.5; Ths ≤ 83 ˚C sinusoidal; a = 1.57; Ths ≤ 90 ˚C t = 25 µs; δ = 0.5; Ths ≤ 83 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) t = 10 ms
MAX.
UNIT
-
-800 800
-1000 -1200 1000 1200
V
-
800 600
1000 800
V V
1200 1000
-
8
A
-
7
A
-
11 16
A A
-
65 71
A A
-40 -
28 150 150
A2s ˚C ˚C
1. Neglecting switching and reverse current losses.
September 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
BY329F, BY329X series
ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
Visol
Peak isolation voltage from both terminals to external heatsink
SOD100 package; R.H. ≤ 65%; clean and dustfree
MIN.
Visol
Cisol
TYP. MAX. UNIT
-
-
1500
V
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree
-
-
2500
V
Capacitance from pin 1 to external heatsink
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
4.8 5.9 -
K/W K/W K/W
MIN.
TYP.
MAX.
UNIT
-
1.5 0.1
1.85 1.0
V mA
MIN.
TYP.
MAX.
UNIT
-
125 0.5 50
145 0.7 60
ns µC A/µs
f = 1 MHz
THERMAL RESISTANCES SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to heatsink Thermal resistance junction to ambient
with heatsink compound without heatsink compound in free air.
Rth j-a
STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL
PARAMETER
CONDITIONS
VF IR
Forward voltage Reverse current
IF = 20 A VR = VRWM; Tj = 125 ˚C
DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL
PARAMETER
CONDITIONS
trr Qs dIR/dt
Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs IF = 2 A; -dIF/dt = 20 A/µs
September 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
I
dI F
BY329F, BY329X series
100
F
IFS (RMS) / A
BY329
90
dt
80 IFSM
70
trr
60
time
50 40
Qs
I
30
100%
25%
20 10
I
R
0 1ms
rrm
Fig.1. Definition of trr, Qs and Irrm
20
30
54
15
10s
BY229F
Tj = 150 C Tj = 25 C
78
0.5
20
0.2
10
1s
IF / A
D = 1.0
Vo = 1.25 V Rs = 0.03 Ohms
0.1s tp / s
Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM.
Ths(max) / C
BY329
PF / W
10ms
102
0.1 tp
I
D=
5
tp T
2
4
6 IF(AV) / A
8
typ
10
150 12
0 0
Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.
15
Ths(max) / C
BY329
PF / W Vo = 1.25 V
0.5
1 VF / V
10
78
2.2
2
BY329
Qs / uC Tj = 150 C Tj = 25 C
IF = 10 A
1.9 10
1.5
Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj
a = 1.57
Rs = 0.03 Ohms
max
t
T
0 0
10
126
10 A
102
2A
2.8 4
1A 2A
1
1A
126
5
0 0
2
4 IF(AV) / A
6
0.1
150 8
1
Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV).
September 1998
10 -dIF/dt (A/us)
100
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
BY329F, BY329X series
BY329
trr / ns
1000
10
Transient thermal impedance, Zth j-hs (K/W)
IF = 10 A 1
10A 1A 1A
0.1
100
PD
0.01
tp
D=
Tj = 150 C Tj = 25 C 0.001 1us
10 1
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C and 150˚C
100
T
10us
tp T t
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229F
10s
Fig.9. Transient thermal impedance Zth = f(tp)
BY329
Cd / pF
10
1 1
10
VR / V 100
1000
Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
BY329F, BY329X series
MECHANICAL DATA Dimensions in mm
10.2 max 5.7 max 3.2 3.0
Net Mass: 2 g
4.4 max
0.9 0.5
2.9 max 4.4 4.0
7.9 7.5 17 max
seating plane
3.5 max not tinned
4.4
13.5 min
k 0.4
a 0.9 0.7
M
0.55 max 1.3
5.08 top view
Fig.10. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
BY329F, BY329X series
MECHANICAL DATA Dimensions in mm
10.3 max
4.6 max
Net Mass: 2 g 3.2 3.0
2.9 max
2.8
Recesses (2x) 2.5 0.8 max. depth
6.4 15.8 19 max. max.
15.8 max
seating plane
3 max. not tinned 3 2.5 13.5 min. 1 0.4
2
M
1.0 (2x) 0.6 2.54
0.9 0.7
0.5 2.5
5.08
Fig.11. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1998
6
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
BY329F, BY329X series
DEFINITIONS Data sheet status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification
This data sheet contains final product specifications.
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1998
7
Rev 1.100
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