Rectifier diodes BY229 series fast, soft-recovery - Datasheet catalog

Transient thermal impedance, Zth j-mb (K/W). D = tp tp. T. T. P t. D. 1. 100. 100. 10. 1. 10. 1000. BY329. Cd / pF. VR / V. September 1998. 4. Rev 1.200 ...
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Philips Semiconductors

Product specification

Rectifier diodes fast, soft-recovery FEATURES

BY229 series

SYMBOL

• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance

QUICK REFERENCE DATA VR = 200 V/ 400 V/ 600 V/800 V

k 1

IF(AV) = 8 A

a 2

IFSM ≤ 60 A trr ≤ 135 ns

GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.

PINNING PIN

SOD59 (TO220AC) DESCRIPTION

1

cathode

2

anode

tab

tab

cathode

The BY229 series is supplied in the conventional leaded SOD59 (TO220AC) package.

1

2

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL

PARAMETER

CONDITIONS

MIN.

BY229 VRSM VRRM VRWM VR

Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage

IF(AV)

Average forward current1

IF(RMS) IFRM IFSM

I2t Tstg Tj

square wave; δ = 0.5; Tmb ≤ 122 ˚C sinusoidal; a = 1.57; Tmb ≤ 125 ˚C

RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 122 ˚C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature

MAX.

UNIT

-

-200 200

-400 400

-600 600

-800 800

V

-

200 150 150

400 300 300

600 500 500

800 600 600

V V V

-

8

A

-

7

A

-

11 16

A A

-

60 66

A A

-40 -

18 150 150

A2s ˚C ˚C

1 Neglecting switching and reverse current losses. September 1998

1

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes fast, soft-recovery

BY229 series

THERMAL RESISTANCES SYMBOL

PARAMETER

Rth j-mb

Thermal resistance junction to mounting base Thermal resistance junction to ambient

Rth j-a

CONDITIONS

in free air.

MIN.

TYP.

MAX.

UNIT

-

-

2.0

K/W

-

60

-

K/W

MIN.

TYP.

MAX.

UNIT

-

1.5 0.1

1.85 0.4

V mA

MIN.

TYP.

MAX.

UNIT

-

100 0.5 50

135 0.7 60

ns µC A/µs

STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL

PARAMETER

CONDITIONS

VF IR

Forward voltage Reverse current

IF = 20 A VR = VRWM; Tj = 125 ˚C

DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL

PARAMETER

CONDITIONS

trr Qs dIR/dt

Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current

IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs IF = 2 A; -dIF/dt = 20 A/µs

September 1998

2

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes fast, soft-recovery

I

dI F

BY229 series

80

F

dt

BY229

IFS(RMS) / A

70 IFSM 60

trr

50

time

40 30

Qs

I

100%

25%

20 10

I

R

0

rrm

1ms

Fig.1. Definition of trr, Qs and Irrm

20

30

110

15

10s

BY229F

Tj = 150 C Tj = 25 C

120

0.5

20

0.2

10

1s

IF / A

D = 1.0

Vo = 1.25 V Rs = 0.03 Ohms

0.1s tp / s

Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM.

Tmb(max) / C

BY329

PF / W

10ms

130

0.1 tp

I

D=

5

tp T

2

4

6 IF(AV) / A

8

typ

10

150 12

0 0

Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.

15

BY329

PF / W

Tmb(max) / C

Vo = 1.25 V

0.5

1 VF / V

10

120

2

BY329

Qs / uC Tj = 150 C Tj = 25 C

a = 1.57

IF = 10 A

1.9 2.2

1.5

Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj

Rs = 0.03 Ohms

10

max

t

T

0 0

10

140

10 A

130

2A

2.8 4

1A 2A

1

1A

140

5

0 0

2

4 IF(AV) / A

6

0.1

150 8

1

Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV).

September 1998

10 -dIF/dt (A/us)

100

Fig.6. Maximum Qs at Tj = 25˚C and 150˚C

3

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes fast, soft-recovery

BY229 series

BY329

trr / ns

1000

10

Transient thermal impedance, Zth j-mb (K/W)

IF = 10 A 1

10A 1A 1A

0.1

100

PD

0.01

tp

D=

Tj = 150 C Tj = 25 C 0.001 1us

10 1

10 -dIF/dt (A/us)

100

Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C and 150˚C

100

T

10us

tp T t

100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229

10s

Fig.9. Transient thermal impedance Zth = f(tp)

BY329

Cd / pF

10

1 1

10

VR / V 100

1000

Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C

September 1998

4

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes fast, soft-recovery

BY229 series

MECHANICAL DATA Dimensions in mm

4,5 max

Net Mass: 2 g

10,3 max 1,3

3,7 2,8

5,9 min

15,8 max

3,0 max not tinned 3,0

13,5 min 1,3 max 1 (2x)

2 0,9 max (2x)

5,08

0,6 2,4

Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".

September 1998

5

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes fast, soft-recovery

BY229 series

DEFINITIONS Data sheet status Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification

This data sheet contains final product specifications.

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1998

6

Rev 1.200

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