TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1999, Power Innovations Limited, UK
●
5 A Continuous On-State Current
●
30 A Surge-Current
●
Glass Passivated Wafer
●
400 V to 800 V Off-State Voltage
●
Max IGT of 200 µA
APRIL 1971 - REVISED JULY 2000
TO-220 PACKAGE (TOP VIEW)
K
1
A
2
G
3
Pin 2 is in electrical contact with the mounting base. MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted) RATING
SYMBOL TIC106D
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
TIC106M TIC106S
VALUE
VDRM
600 700
TIC106N
800
TIC106D
400
TIC106M TIC106S
VRRM
Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3)
600 700
V
V
800
TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2)
UNIT
400
IT(RMS)
5
A
IT(AV)
3.2
A A
Surge on-state current at (or below) 25°C (see Note 4)
ITSM
30
Peak positive gate current (pulse width ≤ 300 µs)
IGM
0.2
A
Peak gate power dissipation (pulse width ≤ 300 µs)
PGM
1.3
W
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Average gate power dissipation (see Note 5)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
1
TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000
electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT
VGT
IH
TEST CONDITIONS
Repetitive peak off-state current Repetitive peak reverse current Gate trigger current
Gate trigger voltage
MIN
TYP
RGK = 1 kΩ
TC = 110°C
400
µA
VR = rated VRRM
IG = 0
TC = 110°C
1
mA
200
µA
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
VAA = 12 V
RL = 100 Ω
TC = - 40°C
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RGK = 1 kΩ
VAA = 12 V
5
1.2 0.4
TC = 110°C
0.6
VT dv/dt NOTE
voltage
TC = - 40°C
Critical rate of rise of off-state voltage
(See Note 6)
VD = rated VD
RGK = 1 kΩ
V
8 mA
RGK = 1 kΩ
IT = 5 A
1
0.2
5
Initiating IT = 10 mA Peak on-state
UNIT
VD = rated VDRM
Initiating IT = 10 mA
Holding current
MAX
1.7 TC = 110°C
10
V V/µs
6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
3.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
PRODUCT
2
INFORMATION
MIN
TYP
TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000
THERMAL INFORMATION AVERAGE ANODE ON-STATE CURRENT
ANODE POWER DISSIPATED vs ON-STATE CURRENT
TI20AA
6
TJ = 110°C
Continuous DC 5
4 Φ = 180º 3
2 0°
180° Φ Conduction
1
10
Angle 0 30
40
50
60
70
80
90
100
1
10
100
IT - On-State Current - A
Figure 1.
Figure 2.
SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION
TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION
TI20AC
Gate Control Guaranteed
10
1
10
100
TI20AD
10 RθJC(t) - Transient Thermal Resistance - °C/W
TC ≤ 80 °C No Prior Device Conduction
1
1
110
TC - Case Temperature - °C
100 ITM - Peak Half-Sine-Wave Current - A
TI20AB
100
PA - Anode Power Dissipated - W
IT(AV) - Maximum Average Anode Forward Current - A
DERATING CURVE
1
0·1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3.
Figure 4.
PRODUCT
100
INFORMATION
3
TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000
TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs
HOLDING CURRENT vs
CASE TEMPERATURE
CASE TEMPERATURE
TC20AB
1
10 VAA = 12 V
RL = 100 Ω
0·8
RGK = 1 kΩ Ω
RGK = 1 kΩ Ω
IH - Holding Current - mA
VGT - Gate Trigger Voltage - V
VAA = 12 V
TC20AD
tp(g) ≥ 20 µs 0·6
0·4
Initiating IT = 10 mA
1
0·2
0 -50
-25
0
25
50
75
100
0.1 -50
125
-25
0
50
75
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 5.
Figure 6.
PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT TC20AE
VTM - Peak On-State Voltage - V
2.5
2.0
TC = 25 °C tp = 300 µs Duty Cycle ≤ 2 %
1.5
1.0
0.5
0.0 0·1
1
10
ITM - Peak On-State Current - A
Figure 7.
PRODUCT
4
25
INFORMATION
100
125
TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000
MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220
4,70 4,20
ø
10,4 10,0
3,96 3,71
1,32 1,23
2,95 2,54 6,6 6,0 15,32 14,55
18,0 TYP.
6,1 5,6
1,47 1,07
0,97 0,66 1
2
14,1 12,7
3 2,74 2,34 5,28 4,68
0,64 0,41 2,90 2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE
A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
INFORMATION
5
TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JULY 2000
IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 2000, Power Innovations Limited
PRODUCT
6
INFORMATION
