BPW34 Silicon PIN Photodiode Description The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO–5 devices in many applications. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives a high sensitivity at a wide viewing angle.
Features 94 8583
D D D D D D
Large radiant sensitive area (A=7.5 mm2) Wide angle of half sensitivity ϕ = ± 65° High photo sensitivity Fast response times Small junction capacitance Suitable for visible and near infrared radiation
Applications High speed photo detector
Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
Test Conditions Tamb
t
x 25 °C
x3s
Symbol VR PV Tj Tstg Tsd RthJA
Value 60 215 100 –55...+100 260 350
Unit V mW °C °C °C K/W
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BPW34 Basic Characteristics Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance p
Test Conditions IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm EA = 1 klx Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 5 V
m
l l
Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current
l l
Temp. Coefficient of Ik Reverse Light g Current
l
Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Noise Equivalent Power Rise Time Fall Time
Symbol V(BR) Iro CD CD Vo TKVo Ik Ik TKIk Ira Ira
Min 60
40
ϕ
l
NEP tr tf
Wl Wl
Max
2 70 25 350 –2.6 70 47 0.1 75 50
30
Unit V nA pF pF mV mV/K A A %/K A A
40
m m m m
±65 900 600...1050 4x10–14 100 100
lp l0.5
VR=10V, =950nm VR=10V, RL=1k , =820nm VR=10V, RL=1k , =820nm
Typ
deg nm nm W/√ Hz ns ns
Typical Characteristics (Tamb = 25_C unless otherwise specified) I ra rel – Relative Reverse Light Current
I ro – Reverse Dark Current ( nA )
1000
100
10
VR=10V 1 40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
2 (5)
VR=5V
1.2
l=950nm
1.0
0.8
0.6 20
94 8403
1.4
0 94 8416
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
BPW34 80
100
10
VR=5V l=950nm
1
0.1 0.01
mW / cm2
)
0.1
100
10 VR=5V 1
102
103
1
VR – Reverse Voltage ( V )
1.0 0.8 0.6 0.4 0.2 0 350
104
EA – Illuminance ( lx )
550
750
Figure 7. Relative Spectral Sensitivity vs. Wavelength 0°
10 °
20 °
30°
1 mW/cm2 S rel – Relative Sensitivity
Ira – Reverse Light Current ( m A )
100
0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2
40° 1.0 0.9
50°
0.8
60° 70°
0.7
80°
l=950nm
1 0.1 94 8419
1150
950
l – Wavelength ( nm )
94 8420
Figure 4. Reverse Light Current vs. Illuminance
100
10
Figure 6. Diode Capacitance vs. Reverse Voltage
S ( l ) rel – Relative Spectral Sensitivity
Ira – Reverse Light Current ( m A )
20
94 8407
1000
94 8418
40
10
1
Figure 3. Reverse Light Current vs. Irradiance
0.1 101
60
0 0.1 Ee – Irradiance (
94 8417
E=0 f=1MHz
CD – Diode Capacitance ( pF )
Ira – Reverse Light Current ( m A )
1000
1
10
100
VR – Reverse Voltage ( V )
Figure 5. Reverse Light Current vs. Reverse Voltage
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8406
Figure 8. Relative Radiant Sensitivity vs. Angular Displacement
3 (5)
BPW34 Dimensions in mm
96 12186
4 (5)
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
BPW34 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
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