BYV96 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of April 1982
1996 Jun 07
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYV96 series
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
• High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability
2/3 page k(Datasheet)
• Available in ammo-pack.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
BYV96D
−
800
V
BYV96E
−
1000
V
−
800
V
repetitive peak reverse voltage
continuous reverse voltage BYV96D
−
1000
V
Ttp = 55 °C; lead length = 10 mm see Fig 2; averaged over any 20 ms period; see also Fig 6
−
1.5
A
Tamb = 55 °C; PCB mounting (see Fig.11); see Fig 3; averaged over any 20 ms period; see also Fig 6
−
0.8
A
Ttp = 55 °C; see Fig 4
−
17
A
Tamb = 55 °C; see Fig 5
−
9
A
BYV96E IF(AV)
IFRM
UNIT
average forward current
repetitive peak forward current
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax
−
35
A
ERSM
non-repetitive peak reverse avalanche energy
L = 120 mH; Tj = Tj max prior to surge; inductive load switched off
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
1996 Jun 07
see Fig 7
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYV96 series
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL
PARAMETER
VF
forward voltage
V(BR)R
reverse avalanche breakdown voltage
CONDITIONS
MIN.
TYP.
MAX.
IF = 3 A; Tj = Tj max; see Fig 8
−
−
1.35
V
IF = 3 A; see Fig 8
−
−
1.60
V
900
−
−
V
IR = 0.1 mA
BYV96D
1100
−
−
V
VR = VRRMmax; see Fig 9
−
−
1
µA
VR = VRRMmax; Tj = 165 °C; see Fig 9
−
−
150
µA
BYV96E IR
UNIT
reverse current
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig 12
−
−
300
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig 10
−
40
−
pF
maximum slope of reverse recovery current
when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13
−
−
6
A/µs
dI R -------dt
THERMAL CHARACTERISTICS SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
VALUE
UNIT
46
K/W
100
K/W
Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”.
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYV96 series
GRAPHICAL DATA MGC588
MGC587
1.2
2.0
handbook, halfpage
IF(AV) (A) 1.6
handbook, halfpage
IF(AV)
lead length 10 mm
(A) 0.8
1.2
0.8 0.4 0.4
0
0 100
0
0
200
Ttp ( o C)
100
a = 1.57; VR = VRRMmax; δ = 0.5.
a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11.
Fig.2
Fig.3
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Tamb ( oC)
200
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGC585
20
handbook, full pagewidth
δ= 0.05
IFRM (A) 16
12 0.1
8 0.2
4
0.5 1
0 10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
Ttp = 55°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYV96 series
MGC586
10
handbook, full pagewidth
IFRM
δ= 0.05
(A) 8
6
0.1
4
0.2
0.5
2
1
0 10 2
10 1
1
10 2
10
10 3
tp (ms)
10 4
Tamb = 55 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC583
MGC576
3
200
handbook, halfpage
P (W)
handbook, halfpage
a = 3 2.5
2
Tj o ( C)
1.57 1.42
2
100
1 D
0
E
0 0
1
2
500
0
IF(AV) (A)
VR (V)
1000
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR.
Fig.6
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
1996 Jun 07
Dotted line = VRRM; δ = 0.5.
Fig.7
5
Maximum permissible junction temperature as a function of reverse voltage.
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYV96 series
MGC577
MGC574
3 10halfpage handbook,
8
handbook, halfpage
IF (A)
IR (µA)
6
10 2
4
10
2
1
10 1
0 0
1
2
VF (V)
3
0
100
Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C.
VR = VRRMmax.
Fig.8
Fig.9
Forward current as a function of forward voltage; maximum values.
o
Tj ( C)
200
Reverse current as a function of junction temperature; maximum values.
MGC584
10 2 handbook, halfpage
50
handbook, halfpage
25 Cd (pF) 7 50 10
2 3 1 1
10
102
VR (V)
103
MGA200
f = 1 MHz; Tj = 25 °C. Dimensions in mm.
Fig.10 Diode capacitance as a function of reverse voltage; typical values.
1996 Jun 07
Fig.11 Device mounted on a printed-circuit board.
6
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
handbook, full pagewidth
BYV96 series
IF (A)
DUT +
10 Ω
0.5
25 V
t rr
1Ω 50 Ω
0
t
0.25 0.5 IR (A) 1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR
MGC499
Fig.13 Reverse recovery definitions.
1996 Jun 07
7
MAM057
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE
handbook, full pagewidth
k
3.81 max
28 min
Dimensions in mm. The marking band indicates the cathode.
, 4.57 max
BYV96 series
a
28 min
0.81 max
MBC880
Fig.14 SOD57.
DEFINITIONS Data Sheet Status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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