1N5817-1N5819 1.0 Ampere Schottky Barrier Rectifiers

0.25. 0.5. 0.75. 1. LEAD TEMPERATURE ( C). FO. RW. AR. D CU. RRE. NT. (A. ) ... .375" 9.5 mm LEAD. LENGTHS. Junction Capacitance. 0.1. 0.5. 1. 5. 10.
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1N5817-1N5819

1N5817 - 1N5819 Features •

1.0 ampere operation at TA = 90°C with no thermal runaway.



For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

DO-41 COLOR BAND DENOTES CATHODE

1.0 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IF(AV)

TA = 25°C unless otherwise noted

Parameter

Value

Units

1.0

A

25

A

1.25 12.5 80

W mW/°C °C/W

RθJA

Average Rectified Current .375 " lead length @ TA = 90°C Non-repetitive Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient

Tstg

Storage Temperature Range

-65 to +125

°C

TJ

Operating Junction Temperature

-65 to +125

°C

IFSM PD

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics Symbol

TA = 25°C unless otherwise noted

Parameter

Device 1N5817 1N5818

Units 1N5819

VRRM

Maximum Peak Repetitive Reverse Voltage

20

30

40

V

VRMS

Maximum RMS Voltage

14

21

28

V

VR

DC Reverse Voltage

20

30

40

V

IRM

Maximum Instantaneous Reverse Current TA = 100°C @ rated VR Maximum Instantaneous Forward Voltage @ 3.0 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz

VFM C

2001 Fairchild Semiconductor Corporation

(Rated VR) TA = 25°C @ 1.0 A

450 750

0.5 10 550 875 110

600 900

mA mA mV mV pF

1N5817-1N5819, Rev. A1

(continued)

Typical Characteristics Forward Current Derating Curve

Forward Characteristics 20 FORWARD CURRENT (A)

FORWARD CURRENT (A)

1

0.75 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.5 mm LEAD LENGTHS

0.5

0.25

0

0

20

40 60 80 100 LEAD TEMPERATURE ( º C)

120

10

1N5819

Non-Repetitive Surge Current

0.4

0.6 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V)

1.8

2

400

25

200 CAPACITANCE (pF)

FORWARD SURGE CURRENT (A)

T J = 25ºC µS Pulse Width = 300µ 1% Duty Cycle

Junction Capacitance

30

8.3ms Single Half Sine-Wave JEDEC Method

20 15 10

T J = 25ºC

100 80 60 40 20

5 0

1N5818

1

0.1 0.2

140

1N5817

1

2

5 10 20 50 NUMBER OF CYCLES AT 60Hz

100

10 0.1

0.5 1 5 10 REVERSE VOLTAGE (V)

40 60 100

1N5817-1N5819, Rev. A1

1N5817-1N5819

Schottky Barrier Rectifiers

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Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G