Case study of failing device using BCB/Cu technology. â¢. The component is an RF product used in the transceiver module of cellular ... To determine cause of failure would be necessary to access the frontside of the die without damaging the ...
Case study of failing device using BCB/Cu technology •
The component is an RF product used in the transceiver module of cellular phones, and is made up of inductors and capacitors.
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The component contains: – – –
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A glass substrate 2 copper metallization layers Several dielectric layers composed of BCB, an organic isolator
The component is encapsulated in an SO20 type package made of plastic molding compound
Localization of defect
Backside polishing, followed by OBIRCh, which detected low ohmic short To determine cause of failure would be necessary to access the frontside of the die without damaging the BCB dielectric layers or the Cu lines
Physical access to the defect: • Standard Method: – Access front side of the die by wet chemical etch of the plastic molding compound
• Result: – Molding compound removed, but the BCB layers have been etched as well and the copper lines have been detached and/or etched away
Physical access to defect using a new approach: Laser + Plasma Laser pre-decapsulation
SESAME 1000, DigitConcept
Plasma RIE assisted by (CO2) filler blast FA2000P, BSET EQ Gaz
Puissance
Pression
Prog 1a
190cm3 CF4; 495 cm3 O2
200W
4350mT
Prog 2a
47 cm3 CF4; 495 cm3O2
200W
4350mT
• Results: – The plastic molding compound has been removed – BCB layers and Cu lines still intact
Conclusions • Conclusion after decapsulation: – The defect was found not to be at the surface of the die, but between two metal layers – Defect found after further RIE plasma etch of BCB layers (2 Cu lines fused by heating).
• Conclusions on methodology: – Standard method not applicable due to introduction of new materials – Laser + plasma etch has made it possible to access this type of device from front side without damage
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