... Stimulation / Soft defect localization. ⢠IR Thermography ... Non destructive analysis ... Region Of Interest ? - Can you still test your product after preparation ?
Analog product…Analog World • Integration trend : at package level – “Black box” system – 3D trend (Power IC, TSV)
• Assembly & Process mix : pick-up your flavor – – – –
Au,Cu,Al wirebonding, Flip-chip… Si, SiC, AsGa… : which FA camera wavelength is best ? MEMS, Power components, small and large ICs Full analog to Mixed IC in CMOS 45nm
- As complete as possible - FA board vs. Test board : understand differences - Identify environment sensitivity (parasitic / noise)
- Often insufficient for root cause but… - Bypassing it is hazardous - Check the evidence.
- Front side or Back side analysis ? - Where is your Region Of Interest ? - Can you still test your product after preparation ?
FA flow challenges • Package decapsulation & Electrical testing – Keep electrical functionality & provide IC access for analysis – Small package & large IC is a challenge • • • •
Mechanical stress induced by decapsulation (molding / leadframe) Package contact with PCB after decapsulation Dedicated low profile open top socket required for EMMI/TLS Repackaging strategy for FA not always considered ( + risk ).
FA tool : Laser stimulation • TLS (Thermal Laser Stimulation) - Powerful FA tool for analog - Need external symptom that a change due to Laser occurs. - Access to internal nodes to bypass “blocking” functions : Design For Analysis (DFA) approach VCC_PCB
FA tool : IR thermography • FA analysis issue for Power MOS : – High power testing on stand alone component – FA tools (TLS, EMMI) limited by top metal layers blocking information. – Backside FA (through silicon) means more invasive sample preparation
• IR Thermography – – – –
Package top decapsulation is enough ~ possible resolution of about 5µm Lock-in mode for hot spot detection Well suited for low ohmic short
To describe a comprehensive overview of fault site localization technique by imaging with Nanoprobes. Resistive Contrast Imaging (RCI). Voltage DIstribution ...
FIB Micro-pillar sampling of Si devices and its 3D observation. T. Yaguchi, T. ... Introduction. New materials such as electronic and semiconductor devices.
Front side / Back side. Software enhancement. COMPUTER AIDED TOOLS FOR FA : NAVIGATION / BITMAP ( full integrated ). Behavioral simulation / diagnostic.
needle stage, the geometry of the original specimen is not a limiting factor for ... Figure 4 shows a schematic flow for the FIB micro-pillar sample preparation ...
Hugo Bender(IMEC),Ronny Camp (Alcatel), Dick Verkleij (Philips), Ernst Demm(Infineon). ⢠ESREF 1998 in Copenhagen (EFUG meeting organised by Dick ...
Scanning Acoustic Microscopy usually used for detection of delamination extended for new applications: ⢠Detection of delaminated balls. ⢠Detection of cracks.
Gerald Beyer. â Ingrid De Wolf. â Ivan Ciofi. â Joke De Messemaeker. â Kris Vanstreels. â Michele Stucchi. â Myriam Van De Peer. â Olalla Varela Pedreira.
stress in Si which changes device performance. Transistor performance in TSV- proximity μ-raman. XRD (Synchrotron). Bowing. Thermal stability of. TSV.
Goal: Reach both dies without separating them, without damage on Cu wires and without acid leak. Methodology: 1. LASER cavity. 2. Wet chemical opening at ...
To achieve these objectives, the Association plans, for example, to set up: - a Web site,. - a library of data on information available in the societies, the official ...
4 x 4 Ni insert contact matrix. (â 6 µm) ... 100°C . This phenomenon is reversible and can be attributed to the temperature dependence resistivity of the materials.
Page 1 ... eng.com), a company he founded in 2006, and now President of Presto ... Michel has been Vice President Marketing at FEI, and General Manager of ...
Oct 3, 2006 - system board, in the same package to realise a fully functional system or sub-system. ... Multi Chip Module, stack dies, single or double flip, WLP. â Package .... Simpler analysis of complex geometries of multi layer stacks and ...
Nov 29, 2011 - 3D integration is a key new trend for microelectronics. At system level, it allows incredible heterogeneous System in Packages with sensors, ...
scientific co-worker at the Fraunhofer Institute of Mechanics of Materials Halle, where he worked in the field of microelectronics and materials analysis. In 1996 ...
ANADEF workgroup report. Philippe Perdu CNES ... reproduction. ⢠To find the root cause ... the only way to proof the origin is to reproduce the defect. ⢠EMI can ...
reversible and can be attributed to the temperature dependence resistivity of the materials. Reliability Characterization. Current / temperature stress setup.
