SEMICONDUCTOR BC517

CHARACTERISTIC. SYMBOL. TEST CONDITION. MIN. TYP. MAX. UNIT. Collector-Base Breakdown Voltage. V(BR)CBO. IC=0.1mA, IE=0. 40.
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SEMICONDUCTOR

BC517

TECHNICAL DATA

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C

A

B

N

MAXIMUM RATING (Ta=25ᴱ) RATING

UNIT

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

30

V V

Collector Current

IC

500

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150



Storage Temperature

Tstg

-55ᴕ150



F

1

2

3

C

10

H F

DIM A B C D E F G H J K L M N

MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00

M

VEBO

Emitter-Base Voltage

J

SYMBOL

G

D

L

CHARACTERISTIC

E

K

1. COLLECTOR 2. BASE 3. EMITTER

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Base Breakdown Voltage

V(BR)CBO

IC=0.1mA, IE=0

40

-

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=10mA, IB=0

30

-

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=1.0mA, IC=0

10

-

-

V

Collector Cut-off Current

ICBO

VCB=40V, IE=0

-

-

1.0

Ọ A

Emitter Cut-off Current

IEBO

VEB=10V, IC=0

-

-

1.0

Ọ A

DC Current Gain

hFE

IC=100mA, VCE=2V

30k

-

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=1mA

-

-

1.0

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=100mA, IB=1mA

-

1.5

2.0

V

Current Gain Bandwidth Product

fT

IC=100mA, VCE=2V, f=100MHz

-

220

-

MHz

VCB=10V, f=1MHz, IE=0

-

5.0

-

pF

Collector Output Capacitance

1999. 11. 30

Revision No : 1

Cob

1/2

BC517

4

10

3

10

-1

10

0

10

1

10

2

10

3

10

1

10

0

0

0.2

COLLECTOR CURRENT I C (mA)

COLLECTOR POWER DISSIPATION P C (mW)

700 625 500 400 300 200 100 0 75

100

125

150

AMBIENT TEMPERATURE Ta ( C)

1999. 11. 30

10

10

10

10 50

0.8

1.0

1.2

I C - VBE

P C - Ta

25

0.6

COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V)

COLLECTOR CURRENT I C (mA)

0

0.4

25 C Ta=55 C

10

2

T a=

Ta=25 C Ta=-55 C

10

C

Ta=125 C

25

5

=1

10

10

3

Ta

10

I C - V CE(sat) COLLECTOR CURRENT I C (mA)

DC CURRENT GAIN h FE

h FE - I C 6

Revision No : 1

175

3

2

1

0

0.8

1.0

1.2

1.4

1.6

1.8

BASE-EMITTER VOLTAGE V BE (V)

2/2