SEMICONDUCTOR
2N3906
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B
C
A
FEATURES Low Leakage Current
N
: ICEX=-50nA(Max.), IBL=-50nA(Max.) K
@VCE=-30V, VEB=-3V.
E
G
Excellent DC Current Gain Linearity.
J
D
Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance
H
F
F
: Cob=4.5pF(Max.) @VCB=5V.
2
3
C
1
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00
M
L
Complementary to 2N3904.
DIM A B C D E F G H J K L M N
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATING (Ta=25 CHARACTERISTIC
) SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Base Current
IB
-50
mA
625
mW
1.5
W
Collector Power
Ta=25
Dissipation
Tc=25
Junction Temperature Storage Temperature Range
2002. 9. 12
PC Tj
150
Tstg
-55 150
Revision No : 2
TO-92
1/4
2N3906 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICEX
VCE=-30V, VEB=-3V
-
-
-50
nA
Base Cut-off Current
IBL
VCE=-30V, VEB=-3V
-
-
-50
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10 A, IE=0
-40
-
-
V
Collector-Emitter Breakdown Voltage *
V(BR)CEO
IC=-1mA, IB=0
-40
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10 A, IC=0
-5.0
-
-
V
hFE(1)
VCE=-1V, IC=-0.1mA
60
-
-
hFE(2)
VCE=-1V, IC=-1mA
80
-
-
hFE(3)
VCE=-1V, IC=-10mA
100
-
300
hFE(4)
VCE=-1V, IC=-50mA
60
-
-
hFE(5)
VCE=-1V, IC=-100mA
30
-
-
VCE(sat)1
IC=-10mA, IB=-1mA
-
-
-0.25
VCE(sat)2
IC=-50mA, IB=-5mA
-
-
-0.4
VBE(sat)1
IC=-10mA, IB=-1mA
-0.65
-
-0.85
VBE(sat)2
IC=-50mA, IB=-5mA
-
-
-0.95
250
-
-
MHz
DC Current Gain
*
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
*
*
fT
Transition Frequency
V
V
VCE=-20V, IC=-10mA, f=100MHz
Collector Output Capacitance
Cob
VCB=-5V, IE=0, f=1MHz
-
-
4.5
pF
Input Capacitance
Cib
VBE=-0.5V, IC=0, f=1MHz
-
-
10
pF
Input Impedance
hie
2.0
-
12
k
Voltage Feedback Ratio
hre
1.0
-
10
x10-4
Small-Signal Current Gain
hfe
100
-
400
Collector Output Admittance
hoe
3.0
-
60
Noise Figure
NF
-
-
4.0
-
-
35
-
-
35
VCE=-10V, IC=-1mA, f=1kHz
VCE=-5V, IC=-0.1mA, Rg=1k
, f=10Hz 15.7kHz
dB
td
Rise Time
tr
10kΩ
V in
275Ω
Vout
Delay Time
C Total 4pF
VCC =-3.0V 0 t r ,t f < 1ns, Du=2%
0.5V -10.6V 300ns
Switching Time
nS
Storage Time
tstg
10kΩ
V in
1N916 or equiv.
Fall Time
tf
9.1V -10.9V
275Ω
Vout
-
-
225
-
-
75
C Total 4pF
VCC =-3.0V 0 t r ,t f < 1ns, Du=2%
20µs
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2002. 9. 12
Revision No : 2
2/4
2N3906
-100
-0.9
-1
-60
-0.4 -0.3
-40
-0.2 IB =-0.1mA
-20
COMMON EMITTER Ta=25 C
0
-1
-2
-3
Ta=-55 C
-0.5
Ta=25 C Ta=125 C
-0.3
-0.3
-1
-3
-10
-30
-100
-300
30
-0.3
-1
-3
-10
-30
-100
-1
-0.3
-0.1
25 C
Ta=1
-0.05
Ta=25 C Ta=-55 C
-0.03
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
I C - VBE
VCE - I B
-40
-0.4
-0.8
-1.2
BASE-EMITTER VOLTAGE V BE (V)
Revision No : 2
-1.6
-300
IC =1mA
IC =10mA
-0.8 -0.6
I C =30mA
-1.0
I C =100mA
5 C Ta=25 C Ta=55 C
Ta=12
-80
-300
COMMON EMITTER I C /I B =10
-0.5
COLLECTOR CURRENT I C (mA)
-120
2002. 9. 12
50
COLLECTOR CURRENT I C (mA)
COMMON EMITTER VCE =-1V
0
Ta=-55 C
VCE(sat) - I C
-1
0
Ta=25 C
100
VBE(sat) - I C
-3
-160
Ta=125 C
COLLECTOR CURRENT I C (mA)
-5
-200
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER I C /I E =10
-0.1 -0.1
COMMON EMITTER VCE =-1V
500
10 -0.1
-4
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
DC CURRENT GAIN h FE
-0.6 -0.5
-10
COLLECTOR CURRENT I C (mA)
1k
-0.8 -0.7
-80
0
h FE - I C
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
I C - VCE
-0.4 -0.2
COMMON EMITTER Ta=25 C
0 -0.001
-0.01
-0.1
-1
-10
BASE CURRENT I B (mA)
3/4
C ob - VCB , C ib - VEB 50
f=1MHz Ta=25 C
CAPACITANCE C ob (pF) C ib (pF)
30
10
C ob C ib
5 3
1 0.5
-0.1
-0.3
-1
-3
-10
REVERSE VOLTAGE V CB (V) V EB (V)
2002. 9. 12
Revision No : 2
-30
COLLECTOR POWER DISSIPATION PC (mW)
2N3906
Pc - Ta 700 600 500 400 300 200 100 0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
4/4
