semiconductor bc327 - ic114.com

mA. Emitter Current. IE. 800. mA. Collector Power Dissipation. PC. 625. mW. Junction Temperature. Tj. 150. ᴱ. Storage Temperature Range. Tstg. -55ᴕ150. ᴱ.
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SEMICONDUCTOR

BC327

TECHNICAL DATA

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B

C

FEATURES A

ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 (VCE=-1V, Ic=-100mA). ᴌFor Complementary with NPN type BC337.

N E

K

G

J

D

MAXIMUM RATING (Ta=25ᴱ) UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-800

mA

Emitter Current

IE

800

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150



Tstg

-55ᴕ150



Storage Temperature Range

H F

F

1

2

3

C

RATING

MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00

M

SYMBOL

L

CHARACTERISTIC

DIM A B C D E F G H J K L M N

1. COLLECTOR 2. BASE 3. EMITTER

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

-

-

-100

nA

Collector Cut-off Current

ICBO

VCB=-45V, IE=0

DC Current Gain (Note)

hFE

VCE=-1V, IC=-100mA

100

-

630

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-

-

-0.7

V

Base-Emitter Voltage

VBE(ON)

VCE=-1V, IC=-300mA

-

-

-1.2

V

Transition Frequency

fT

VCE=-5V, IC=-10mA, f=100MHz

-

100

-

MHz

VCB=-10V, f=1MHz, IE=0

-

16

-

pF

Cob

Collector Output Capacitance Note : hFE Classification none:100ᴕ630,

2000. 2. 28

16:100ᴕ250,

Revision No : 2

25:160ᴕ400,

40:250ᴕ630

1/2

BC327

-800

V

CE

-600

3k

-9 -8 -7 -6

=-1

DC CURRENT GAIN h FE

-1k

h FE - I C

-5 -4

V

-3 -2 I B =-1mA

-400 -200

0

0 -0.2

COMMON

-0.4

Ta=25 C

-0.8

500 300

Ta=25 C

100

Ta=-25 C

50 30

-1

-3

-10

-30

-100

-300

-1k

COLLECTOR CURRENT I C (mA) -0.6

-0.4

-0.2

0

-10

-20

-30

-40

COLLECTOR-EMITTER VOLTAGE V CE (V)

COMMON EMITTER Ta=25 C

-1000 -800

-8

-7 -6 -5 -4

-600

COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)

-1.0 -0.8

-1200

VCE(sat) - I C -3

COMMON EMITTER I C/I B =25

-1 -0.3 -0.1

Ta=25 C

Ta=100 C

-0.03

Ta=-25 C

-0.01 -1

-3

-10

0

0

-1

-2

-3

-4

-5

-6

COLLECTOR-EMITTER VOLTAGE V CE (V)

500

30 10

-10 -3 -1 -0.2

-0.4

-0.6

-0.8

BASE-EMITTER VOLTAGE V BE (V)

Revision No : 2

-1.0

COLLECTOR POWER DISSIPATION PC (mW)

C =-2 5 Ta

Ta =2 5 C

C 00 Ta =1

-30

-3

-10

-30

-100

-300

-1k

COLLECTOR CURRENT I C (mA)

-300 -100

-1k

100

-1

COMMON EMITTER VCE =-1V

-1k

-300

COMMON EMITTER Ta=25 C VCE =-5V

300

I C - V BE -5k

-100

f T - IC

-2 I B =-1mA

-200

-30

COLLECTOR CURRENT I C (mA)

-3

-400

0

COLLECTOR CURRENT I C (mA)

Ta=100 C

10

I C -V CE (LOW VOLTAGE REGION) COLLECTOR CURRENT I C (mA)

1k

VCE =-1V

BASE CURRENT I B (mA)

2000. 2. 28

COMMON EMITTER VCE =-1V

EMITTER

-0.6

TRANSITION FREQUENCY f T (MHz)

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT I C (mA)

STATIC CHARACTERISTICS

P C - Ta 700 600 500 400 300 200 100 0 0

25

50

75

100

125

150

175

AMBIENT TEMPERATURE Ta ( C)

2/2