R s2. U. I. R. 2 ε ε ε ε. 2P. 1P. R,R. 2S. 1S. R,R. - open circuit. - short circuit. - assuming: 4. 2. 3. 1. R. R. R. R. = - bridge balance condition. N â nonlinearity factor ...
Sensors of mechanical stress - Hook: relation of mechanical stress and deformation (strain, prolongation) - types: 1. Capacitive strain gages 2. Resonant strain gages 3. Sensors with metastable magnetic alloys (memory) 4. Resistive strain gages (gauges)
Torque
M k = Fr Hook`s law
σ = Eε
Mk ... torque F ...
force
r ...
arm
σ = F/S ... tension, stress ε = ∆l/l ... deformation E = Young`s module of elasticity
Resonant sensors (string strain gages) - resonant frequency fo of string with length l and mass m depends on stretching force F
stimul
1 F fo = 2 ml m m = V lS F σ = = εE S
ρ=
buzení ∆l = ε ... relative deformation l E ... Young module of elasticity σ ... mechanical stress
⇓ 1 σ 1 εE fo = = 2l ρ 2l ρ
response
t odezva
- application: mechanical stress in large objects (dam, bridges…) Resonant string gage signal conditioning circuits: -pulse of driving current in coil magnetises and atract string → after pulse termination string performs damped oscillations inducing voltage in a coil - feedback arrangements of driving coil and pick - up coil - output voltage of pick-up coil amplified and connected to driving coil ⇒ OSCILLATOR
Sensors based on metastable magnetic alloys - increase of stress acting on certain magnetic alloys causes a change of their crystallic structure =>behave as FERROMAGNETIC material - transformation of crystallic structure is IRREVESIBLE ⇒ disposable sensors „memory“ of mechanical stress changes - passive type of sensors UH UA[V] 6
2
4 2 1
0
0
0,2
1 strip of an alloy 2 Hall probe + permanent magnet
0,4
0,6 ε
Resistive strain gages free grid metal
wire foil layer
bonded vacuum sputtering
strain gages
bonded monocrystallic semiconductor
difused to Si substrate
polycrystallic (sputtered)
Principle of operation S - ∆S - basic relation:
l R= ρ S l + ∆l
- total differential:
∆R ∆l ∆S ∆ρ = − + R l S ρ 2
∆l ∆S ∆l ∆l = −2 µ + µ + ... ≅ −2 µ S l l l µ ... Poison`s constant ∆ρ ∆R
R = 1 + 2µ + ρ = 1 + 2µ + π E e ∆l ∆l l l π e ... piezoresistive coefficient E ... Young module of elasticity
∆l = ε ... relative deformation l ∆ρ - caused by microstructural ρ changes of gage material–
changes must not be irreversible!
∆S
- depends on ∆l
∆R = C1ε + C2ε 2 + C3ε 3 + ... R0, 0 d K ε ,0 =
∆R R0, 0
= C1 + 2C2ε + 3C3ε 2 + ...
dε K ε , 0 ... strain gage factor (constant) Metal strain gages: K ≈ 2,
C2 ≈ 0 pro ε < 10-3
- temperature coefficient of sensitivity : - temperature coefficient of resistance αK =
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