RF2126
• Commercial and Consumer Systems
• Digital Communication Systems
• Portable Battery Powered Equipment
2
• PCS Communication Systems
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 2500MHz. The device is packaged in an 8-lead plastic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W.
.157 .150
.019 .014
1 .196 .189
.123 .107 .050 .244 .230
.061 .055
Si Bi-CMOS
GaAs HBT
GaAs MESFET
.087 .071
8°MAX 0°MIN
.035 .016
.010 .007
Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information.
Si BJT
EXPOSED HEATSINK
.010 .004
!
• Single 3V to 6.5V Supply • 1.3W Output Power • 12dB Gain • 45% Efficiency
RF IN 1
8 RF OUT
RF IN 2
7 RF OUT
PC 3
BIAS CIRCUIT
VCC 4
• Power Down Mode • 1800MHz to 2500MHz Operation
6 RF OUT 5 RF OUT
PACKAGE BASE
RF2126 RF2126 PCBA
High Power Linear Amplifier Fully Assembled Evaluation Board
GND
Rev A4 990429
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
2-65
POWER AMPLIFIERS
• 2.5GHz ISM Band Applications
RF2126 Absolute Maximum Ratings Parameter
POWER AMPLIFIERS
2
Rating
Unit
Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR
-0.5 to +7.5 -0.5 to +5V 450 +20 20:1
VDC V mA dBm
Operating Ambient Temperature Storage Temperature
-40 to +85 -40 to +100
°C °C
Parameter
Specification Min. Typ. Max.
Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information.
Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Unit
T=25 °C, VCC =6.0V, VPC =3.0V, ZLOAD =12Ω, Pin = 0dBm, Freq=2450MHz, Idle current=180mA
Overall Frequency Range Maximum Output Power Maximum Output Power Maximum Output Power Total Power Added Efficiency Total Power Added Efficiency Total Power Added Efficiency Small-signal Gain Second Harmonic Third Harmonic
Condition
1800
+30.0
Input VSWR
+27.0
2500
MHz dBm
+29 +31.0 45 45 45 12 -55 -60
dBm dBm % % % dB dBc dBc
1.5:1
VCC =3.6V, PIN =+19dBm VCC =4.8V, PIN =+19dBm VCC =6.0V, PIN =+19dBm Maximum output, VCC =3.6V Maximum output, VCC =4.8V Maximum output, VCC =6.0V See Application Schematic, PIN =+17dBm
With external matching network; see application schematic
Two-tone Specification Average Two-Tone Power IM3 IM5 IM7
-24
+27 -25 -35 -55
dBm dBc dBc dBc
PEP-3dB POUT =+24dBm for each tone POUT =+24dBm for each tone POUT =+24dBm for each tone
Power Control VPC Power Control “OFF”
1.5 0.2
3.0 0.5
3.5
V V
3.0 270
350
6.5 410
0.5
10
V mA µA
To obtain 180mA idle current Threshold voltage at device input
Power Supply Power Supply Voltage Supply Current Power Down Current
2-66
POUT =+30dBm, VCC =6.0V VPC =0.2V
Rev A4 990429
RF2126 Function RF IN
2 3
RF IN PC
4
VCC
5
RF OUT
6 7 8 Pkg Base
RF OUT RF OUT RF OUT GND
Rev A4 990429
Description
Interface Schematic
RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50Ω is obtained by providing an external series capacitor of 1.6pF and then a shunt capacitor of 2.0pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Same as pin 1.
2
Power control pin. For obtaining maximum performance the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device, i.e. maintaining a fixed current level, or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wavelength microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 1.8pF and a series capacitor of 3.3pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Since there are several output pins available, which are internally connected, one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5.
POWER AMPLIFIERS
Pin 1
Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required.
2-67
RF2126 1.6 pF RF IN
2
1
8
2
7
POWER AMPLIFIERS
2.0 pF
3.3 pF RF OUT
VPD
1.8 pF 3
BIAS CIRCUIT
1000 pF 4
6 5
PACKAGE BASE
VCC
4.7 nH
1000 pF
33 pF
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1
P1-3 RF IN J1
VCC
2
GND
3
VPC
1.6 pF C2
50 Ω µstrip 2.0 pF C1
1
8
2
7
3
6
VPC 1000 pF C6
BIAS CIRCUIT
PACKAGE BASE
VCC 1 uF C8
1000 pF C7
3.3 pF C4
RF OUT 50 Ω µstrip J2
1.8 pF C3
5
4
2-68
1
4.7 nH L1 33 pF C5
Rev A4 990429
RF2126 !" # !" Board Thickness 0.031”, Board Material FR-4
POWER AMPLIFIERS
2
Rev A4 990429
2-69
RF2126
POWER AMPLIFIERS
2
2-70
Rev A4 990429
