BF244A / BF244B / BF244C
BF244A BF244B BF244C
S
G
TO-92 D
N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.
Absolute Maximum Ratings* Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VDG
Drain-Gate Voltage
VGS
Gate-Source Voltage
30
V
- 30
V
ID
Drain Current
50
mA
IGF
Forward Gate Current
10
mA
Tstg
Storage Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
Max
Units
BF244A / BF244B / BF244C 350 2.8 125
mW mW/°C °C/W
357
°C/W
(continued)
Electrical Characteristics Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS IG = 1.0 µA, VDS = 0 VGS = - 20 V, VDS = 0
30
V(BR)GSS
Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
VGSS(off)
Gate-Source Cutoff Voltage
VDS = 15 V, ID = 10 nA
VGS
Gate-Source Voltage
VDS = 15 V, ID = 200 µA
244A 244B 244C
VDS = 15 V, VGS = 0
V 5.0
nA
- 0.5
- 8.0
V
- 0.4 - 1.6 - 3.2
- 2.2 - 3.8 - 7.5
V V V
244A 244B 244C
2.0 6.0 12
6.5 15 25
mA mA mA
3.0
6.5
mmhos mmhos
BF244A / BF244B / BF244C
N-Channel RF Amplifier
ON CHARACTERISTICS IDSS
Zero-Gate Voltage Drain Current
SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance
yos
Output Admittance
VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 15 V, VGS = 0, f = 1.0 kHz
yrs
Reverse Transfer Admittance
VDS = 15 V, VGS = 0, f = 200 MHz
1.0
Ciss
Input Capacitance
VDS = 20 V, VGS = - 1.0 V
3.0
µmhos pF
Crss
Reverse Transfer Capacitance
0.7
pF
Coss
Output Capacitance
0.9
pF
NF
Noise Figure
1.5
dB
F(Yfs)
Cut-Off Frequency
VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 15 V, VGS = 0, RG = 1.0 kΩ, f = 100 MHz VDS = 15 V, VGS = 0
700
MHz
yfs
5.6 40
µmhos
5 Typical Characteristics Channel Resistance vs Temperature
Transfer Characteristics
1000
V GS(OFF) = -4.5V
V DS
= 15V
r DS - DRAIN ON RESISTANCE (Ω )
20 ID - DRAIN CURRENT (mA)
O
TA = -55 C
16
O
T A = +25 C T A = +125O C
12
O
TA = -55 C O
T A = +25 C
8
T A = +125O C
4
-2.5 V 0
500
-1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V)
-5
-2.5 V
200
-5.0V 100
-8.0 V 50 30
V DS
20
= 100mV
V GS = 0 V 10
0
V GS(OFF) = -1.0V
300
-50
0 50 100 150 T A - AMBIENT TEMPERATURE ( C)
