MMBT2222A
PZT2222A C
C
E
E C
B
C
TO-92
B
B
SOT-23
E
SOT-223
Mark: 1P
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings* Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
1.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max PN2222A 625 5.0 83.3
*MMBT2222A 350 2.8
**PZT2222A 1,000 8.0
200
357
125
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1998 Fairchild Semiconductor Corporation
Units mW mW/°C °C/W °C/W
PN2222A / MMBT2222A / PZT2222A
PN2222A
(continued)
Electrical Characteristics Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
75
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
6.0
ICEX
Collector Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 3.0 V, IC = 0
IBL
Base Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
V 10
nA
0.01 10 10
µA µA nA
20
nA
ON CHARACTERISTICS hFE
VCE(sat) VBE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage*
IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
35 50 75 35 100 50 40
300
0.6
300
0.3 1.0 1.2 2.0
V V V V
SMALL SIGNAL CHARACTERISTICS fT
Current Gain - Bandwidth Product
IC= 20 mA, VCE= 20 V, f= 100 MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 100 kHz
8.0
MHz
Cibo rb’CC
Input Capacitance
VEB = 0.5 V, IC = 0, f = 100 kHz
25
pF
Collector Base Time Constant
IC= 20 mA, VCB= 20 V, f= 31.8 MHz
150
pS
NF
Noise Figure
4.0
dB
Re(hie)
Real Part of Common-Emitter High Frequency Input Impedance
IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz
60
Ω
10
ns
pF
SWITCHING CHARACTERISTICS td
Delay Time
VCC = 30 V, VBE(OFF) = 0.5 V,
tr
Rise Time
IC = 150 mA, IB1 = 15 mA
25
ns
ts
Storage Time
VCC = 30 V, IC = 150 mA,
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
60
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
(continued)
V CE = 5V
400 125 °C
300 200
25 °C
100 - 40 °C
0 0.1
0.3
1 3 10 30 100 I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation Voltage vs Collector Current β = 10
1
- 40 °C
0.8
25 °C 125 °C
0.6
0.4 1 I
C
10 100 - COLLECTOR CURRENT (mA)
500
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
500
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain vs Collector Current
V BESAT - BASE-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
0.4 β = 10 0.3
125 °C
0.2 25 °C
0.1 - 40 °C
1
10 100 I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8
- 40 °C 25 °C
0.6 125 °C
0.4
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
25
Emitter Transition and Output Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current vs Ambient Temperature 500 100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation Voltage vs Collector Current
10 1 0.1
f = 1 MHz
16 12 C te
8 C ob
4 25
50 75 100 125 T A - AMBIENT TEMPERATURE (° C)
150
0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 =
Switching Times vs Collector Current 400
Ic
320 TIME (nS)
V cc = 25 V
240 160
240 ts
160
tr
t off
80
tf
80
t on
td
100 I C - COLLECTOR CURRENT (mA)
0 10
1000
100 I C - COLLECTOR CURRENT (mA)
Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W)
TIME (nS)
10
320 V cc = 25 V
0 10
Ic
I B1 = I B2 =
10
SOT-223
0.75
TO-92
0.5 SOT-23
0.25
0
0
25
50 75 100 o TEMPERATURE ( C)
125
150
1000
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
(continued)
V CE = 10 V T A = 25oC
6 hoe 4 h re 2 h fe h ie 0
0
10
20 30 40 50 I C - COLLECTOR CURRENT (mA)
60
CHAR. RELATIVE TO VALUES AT TA = 25oC
Common Emitter Characteristics 8
CHAR. RELATIVE TO VALUES AT VCE = 10V
CHAR. RELATIVE TO VALUES AT I C= 10mA
Typical Common Emitter Characteristics
(f = 1.0kHz)
Common Emitter Characteristics 2.4
V CE = 10 V I C = 10 mA
2
h re
h fe
1.6
hoe
1.2 0.8 0.4 0
0
20 40 60 80 T A - AMBIENT TEMPERATURE ( o C)
Common Emitter Characteristics 1.3
I C = 10 mA T A = 25oC
1.25
h fe
1.2 1.15 h ie
1.1 1.05 1
h re
0.95 0.9 0.85
hoe
0.8 0.75
0
5
h ie
10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V)
35
100
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
(continued)
Test Circuits 30 V
200 Ω
16 V Ω 1.0 KΩ 0 ≤ 200ns
500 Ω
FIGURE 1: Saturated Turn-On Switching Time
6.0 V
- 1.5 V
NOTE: BVEBO = 5.0 V
1k
30 V Ω 1.0 KΩ 0 ≤ 200ns
50 Ω
FIGURE 2: Saturated Turn-Off Switching Time
37 Ω
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G
