Order this document by 2N4400/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
*Motorola Preferred Device
COLLECTOR 3 2 BASE 1 EMITTER
1 2
3
MAXIMUM RATINGS Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C
PD
625 5.0
mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 12
Watts mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction Temperature Range
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
—
0.1
µAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
—
0.1
µAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol
Characteristic
Min
Max
Unit
ON CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N4401
hFE 20
—
—
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N4400 2N4401
20 40
— —
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N4400 2N4401
40 80
— —
(IC = 150 mAdc, VCE = 1.0 Vdc)
2N4400 2N4401
50 100
150 300
(IC = 500 mAdc, VCE = 2.0 Vdc)
2N4400 2N4401
20 40
— —
Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
— —
0.4 0.75
Vdc
Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75 —
0.95 1.2
Vdc
200 250
— —
SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT 2N4400 2N4401
MHz
Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
6.5
pF
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
—
30
pF
0.5 1.0
7.5 15
0.1
8.0
20 40
250 500
hoe
1.0
30
µmhos
(VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc)
td
—
15
ns
tr
—
20
ns
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
ts
—
225
ns
tf
—
30
ns
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie 2N4400 2N4401
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
k ohms
X 10–4
hfe 2N4400 2N4401
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
—
SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V
+ 30 V +16 V 0 – 2.0 V
1.0 to 100 µs, DUTY CYCLE ≈ 2.0%
200 Ω
+16 V
1.0 to 100 µs, DUTY CYCLE ≈ 2.0%
200 Ω
0 1.0 kΩ < 2.0 ns
CS* < 10 pF
1.0 kΩ
–14 V < 20 ns
CS* < 10 pF
– 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
2
Figure 2. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TRANSIENT CHARACTERISTICS 25°C
100°C 10 7.0 5.0
30
10 7.0 5.0
QT
2.0 1.0 0.7 0.5 0.3 0.2
Ccb 3.0 2.0 0.1
VCC = 30 V IC/IB = 10
3.0
Cobo
Q, CHARGE (nC)
CAPACITANCE (pF)
20
QA
0.1 0.2 0.3 0.5
2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS)
20 30
50
10
200 50 70 100 30 IC, COLLECTOR CURRENT (mA)
20
Figure 3. Capacitances
100 IC/IB = 10
70
VCC = 30 V IC/IB = 10
70 tr 50
50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0
30 20
t, TIME (ns)
t, TIME (ns)
500
Figure 4. Charge Data
100
30
tf
20
10
10
7.0
7.0 5.0
5.0 10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise and Fall Times
300
300
500
100 ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20
VCC = 30 V IB1 = IB2
70 50 t f , FALL TIME (ns)
200 t s′, STORAGE TIME (ns)
300
100 70
IC/IB = 20
30 20
IC/IB = 10
10
50
7.0 30
5.0 10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
300
500
3
SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10
10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ
8.0 NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE
6.0
4.0
2.0
IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA
6.0
4.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0 0.5 1.0 2.0 5.0
10
20
50
100
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C selected from both the 2N4400 and 2N4401 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly numhfe and other “h” parameters for this series of transistors. To bered curves on each graph. obtain these curves, a high–gain and a low–gain unit were 300
hfe , CURRENT GAIN
200
100 70 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
50 30 20 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
hie , INPUT IMPEDANCE (OHMS)
50 k
2.0 k 1.0 k
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
Figure 11. Current Gain
Figure 12. Input Impedance
5.0 7.0 10
100 hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
5.0 k
IC, COLLECTOR CURRENT (mA)
10
4
10 k
IC, COLLECTOR CURRENT (mA)
7.0 5.0
2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1
20 k
500
5.0 7.0 10
2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
50
20 10 5.0
2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
2.0 1.0 0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
5.0 7.0 10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0 VCE = 1.0 V VCE = 10 V
2.0
TJ = 125°C 1.0 25°C 0.7 0.5
– 55°C
0.3 0.2 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0 TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0 0.01
0.02 0.03
0.2
0.05 0.07 0.1
0.3
0.5 0.7 1.0 IB, BASE CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50
Figure 16. Collector Saturation Region
1.0
+ 0.5 TJ = 25°C VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0.5
50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
– 0.5 – 1.0 – 1.5
qVB for VBE
– 2.0
0 0.1 0.2
qVC for VCE(sat)
0 COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
0.8
100 200
500
Figure 17. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
– 2.5 0.1 0.2
0.5
50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100 200
500
Figure 18. Temperature Coefficients
5
PACKAGE DIMENSIONS
A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
B
R P L
F
SEATING PLANE
K D J
X X G H V
C
1
SECTION X–X
N N
CASE 029–04 (TO–226AA) ISSUE AD
DIM A B C D F G H J K L N P R V
INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 –––
MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 –––
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
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6
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4400/D
