Philips Semiconductors

Product specification

PowerMOS transistor

GENERAL DESCRIPTION

BUK466-200A

QUICK REFERENCE DATA

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

PINNING - SOT404 PIN

SYMBOL

PARAMETER

MAX.

UNIT

VDS ID Ptot Tj RDS(ON)

Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance

200 19 150 175 0.16

V A W ˚C Ω

PIN CONFIGURATION

SYMBOL

DESCRIPTION

d mb

1

gate

2

drain

3

source

mb

drain

g 2 1

3

s

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj

Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature

RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C -

- 55 -

200 200 30 19 13 76 150 175 175

V V V A A A W ˚C ˚C

THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a

Thermal resistance junction to mounting base Thermal resistance junction to ambient

February 1996

CONDITIONS

minimum footprint, FR4 board (see Fig. 18).

1

MIN.

TYP.

MAX.

UNIT

-

-

1.0

K/W

-

50

-

K/W

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK466-200A

STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance

VGS = 0 V; ID = 0.25 mA

200

-

-

V

VDS = VGS; ID = 1 mA VDS = 200 V; VGS = 0 V; Tj = 25 ˚C VDS = 200 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 10 A

2.1 -

3.0 1 0.1 10 0.15

4.0 10 1.0 100 0.16

V µA mA nA Ω

MIN.

TYP.

MAX.

UNIT

VGS(TO) IDSS IDSS IGSS RDS(ON)

DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

gfs

Forward transconductance

VDS = 25 V; ID = 10 A

8.5

16

-

S

Ciss Coss Crss

Input capacitance Output capacitance Feedback capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz

-

1500 300 60

2000 400 100

pF pF pF

td on tr td off tf

Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time

VDD = 30 V; ID = 3 A; VGS = 10 V; Rgen = 50 Ω; RGS = 50 Ω

-

20 40 145 50

30 60 185 70

ns ns ns ns

Ld

Internal drain inductance

-

2.5

-

nH

Ls

Internal source inductance

Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad

-

7.5

-

nH

MIN.

TYP.

MAX.

UNIT

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

IDR

-

-

-

19

A

IDRM VSD

Continuous reverse drain current Pulsed reverse drain current Diode forward voltage

IF = 19 A ; VGS = 0 V

-

1.0

76 1.7

A V

trr Qrr

Reverse recovery time Reverse recovery charge

IF = 19 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V

-

180 2.5

-

ns µC

MIN.

TYP.

MAX.

UNIT

-

-

150

mJ

AVALANCHE LIMITING VALUE Tmb = 25 ˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

WDSS

Drain-source non-repetitive unclamped inductive turn-off energy

ID = 19 A ; VDD ≤ 30 V ; VGS = 10 V ; RGS = 50 Ω

February 1996

2

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

120

BUK466-200A

Normalised Power Derating

PD%

Zth j-mb / (K/W)

10

BUKx56-lv

110 100 90

D=

1

80

0.5

70

0.2 0.1 0.05

60

0.1

50

0.02

40 30

0.01

tp

PD

10 0 0

20

40

60

80 100 Tmb / C

120

140

160

1E-05

1E-01

1E+01

Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

Normalised Current Derating

ID%

1E-03 t/s

tp T t

T

0.001

180

Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)

120

D=

0

20

40

BUK456-200A 7 6

ID / A 20

110

10

100 90

30

80 70 60

20 5

VGS / V =

50 40 30

10

20

4

10

0

0 0

20

40

60

80 100 Tmb / C

120

140

160

180

BUK456-200A,B

ID / A ID S/

N)

=

1.0

A

VD

4

0.8

RD

4

6

8

10 12 VDS / V

16

4.5

5

5.5 0.6

1 ms

6

10 ms 100 ms

7

0.4

10

0.2

0

0.1 1

10

100 VDS / V

1000

Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp

February 1996

20

VGS / V =

DC 1

18

BUK456-200A

100 us

10

14

RDS(ON) / Ohm

tp = 10 us

O S(

2

Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS

Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

100

0

0

10

20 ID / A

30

40

Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS

3

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

40

BUK466-200A

ID / A

VGS(TO) / V

BUK456-200A

max. 4

30

typ. 3 min.

20

2

Tj / C = 10

0

1

25

150

0

0

2

4

6

8

10

-60

-20

20

VGS / V

gfs / S

100

140

180

Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj

20

60 Tj / C

BUK456-200A

SUB-THRESHOLD CONDUCTION

ID / A

1E-01

1E-02

15 2%

1E-03

typ

98 %

10 1E-04

5

0

1E-05

1E-06

0

10

20 ID / A

30

40

0

Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V

2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0

2 VGS / V

3

4

Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Normalised RDS(ON) = f(Tj)

a

1

10000

BUK4y6-200

C / pF

Ciss 1000

Coss 100 Crss

-60

-20

20

60 Tj / C

100

140

10

180

0

40 VDS / V

Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 10 V

February 1996

20

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

4

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK466-200A

BUK456-200

VGS / V

12

40

IF / A

BUK456-200A

VDS / V =40

10

30

8 Tj / C = 150

160 6

25

20

4 10

2 0

0

10

20 QG / nC

30

0

40

0

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 19 A; parameter VDS

February 1996

1 VSDS / V

2

Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

5

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK466-200A

MECHANICAL DATA Dimensions in mm

4.5 max 1.4 max

10.3 max

Net Mass: 1.4 g

11 max 15.4

2.5 0.85 max (x2)

0.5

2.54 (x2)

Fig.15. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS Dimensions in mm

11.5

9.0

17.5 2.0

3.8

5.08

Fig.16. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8".

February 1996

6

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK466-200A

DEFINITIONS Data sheet status Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification

This data sheet contains final product specifications.

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996

7

Rev 1.000