Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.

PINNING - SOT404 PIN

BUK7635-55

QUICK REFERENCE DATA SYMBOL

PARAMETER

VDS ID Ptot Tj RDS(ON)

Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V

PIN CONFIGURATION

MAX.

UNIT

55 34 85 175 35

V A W ˚C mΩ

SYMBOL

DESCRIPTION

d mb

1

gate

2

drain

3

source

mb

drain

g 2 1

s

3

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj

Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature

RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C -

- 55

55 55 16 34 24 136 85 175

V V V A A A W ˚C

MIN.

MAX.

UNIT

-

2

kV

TYP.

MAX.

UNIT

-

1.75

K/W

50

-

K/W

ESD LIMITING VALUE SYMBOL

PARAMETER

CONDITIONS

VC

Electrostatic discharge capacitor voltage, all pins

Human body model (100 pF, 1.5 kΩ)

THERMAL RESISTANCES SYMBOL

PARAMETER

CONDITIONS

Rth j-mb

Thermal resistance junction to mounting base Thermal resistance junction to ambient

-

Rth j-a

August 1997

Minimum footprint, FR4 board

1

Rev 1.100

Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET

BUK7635-55

STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS

Drain-source breakdown voltage Gate threshold voltage

VGS = 0 V; ID = 0.25 mA;

VGS(TO)

Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C

IDSS

Zero gate voltage drain current

VDS = 55 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V

IGSS

Gate source leakage current

±V(BR)GSS RDS(ON)

Gate source breakdown voltage IG = ±1 mA; Drain-source on-state VGS = 10 V; ID = 17 A resistance

Tj = 175˚C Tj = 175˚C Tj = 175˚C

MIN.

TYP.

MAX.

UNIT

55 50 2.0 1.0 16 -

3.0 0.05 0.04 28 -

4.0 4.4 10 500 1 20 35 74

V V V V µA µA µA µA V mΩ mΩ

MIN.

TYP.

MAX.

UNIT

DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL

PARAMETER

CONDITIONS

gfs

Forward transconductance

VDS = 25 V; ID = 15 A

4

-

-

S

Ciss Coss Crss

Input capacitance Output capacitance Feedback capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz

-

700 200 100

880 40 140

pF pF pF

td on tr td off tf

Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time

VDD = 30 V; ID = 15 A; VGS = 10 V; RG = 10 Ω Resistive load

-

11 35 25 22

16 50 35 29

ns ns ns ns

Ld

Internal drain inductance

-

2.5

-

nH

Ls

Internal source inductance

Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad

-

7.5

-

nH

MIN.

TYP.

MAX.

UNIT

-

-

34

A

IF = 25 A; VGS = 0 V IF = 34 A; VGS = 0 V

-

0.95 1.0

136 1.2 -

A V

IF = 34 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V

-

40 0.16

-

ns µC

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL

PARAMETER

IDR IDRM VSD

Continuous reverse drain current Pulsed reverse drain current Diode forward voltage

trr Qrr

Reverse recovery time Reverse recovery charge

August 1997

CONDITIONS

2

Rev 1.100

Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET

BUK7635-55

AVALANCHE LIMITING VALUE SYMBOL

PARAMETER

CONDITIONS

WDSS

Drain-source non-repetitive unclamped inductive turn-off energy

ID = 20 A; VDD ≤ 25 V; VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C

120

Normalised Power Derating

PD%

MIN.

TYP.

MAX.

UNIT

-

-

45

mJ

1000

110 ID/A

100 90

tp =

RDS(ON) = VDS/ID

100

80

1 us

70

10us

60 50 40

100 us

DC

10

30

1 ms

20

10ms 100ms

10 0 0

20

40

60

80 100 Tmb / C

120

140

160

180

1

Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)

120

10

100

VDS/V

Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp

Normalised Current Derating

ID%

1

10

ZTH/ (K/W)

110 100 90 80

1 0.5

70 60

0.2

50

0.1

40

0.05

0.1

30

PD

tp

D=

t

T

0.02

tp T

20 10

0

0 0

20

40

60

80 100 Tmb / C

120

140

160

0.01

180

Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

August 1997

1.0E-06

0.0001

0.01 t/s

1

100

Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

3

Rev 1.100

Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET

100

BUK7635-55

16

16 14 12

ID/A

VGS/V =

gfs/S 14

10.0

80

9.5 9.0

12

8.5

60

10

8.0 7.5

40

8

7.0 6

6.5 20

0

6.0

0

2

4

VDS/V 6

4

5.5 5.0 4.5 10 4.0

8

2

Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS

65

0

20

30

ID/A

40

50

60

70

Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V

RD(ON)/mOhm

2.5

VGS/V =

10

BUK959-60

a

Rds(on) normlised to 25degC

6

60 55

2

7

6.5 50

1.5

45

8

40

9

1

10

35 30 25

0

10

20

30 ID/A 40

50

60

0.5 -100

70

Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS

-50

0

50 Tmb / degC

100

150

200

Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 10 V

70

5

ID/A 60

VGS(TO) / V

BUK759-60

max. 4

50

typ.

40

3

30

2

min.

20

1 10 Tj/C = 0

0

2

175

25 4 VGS/V 6

8

10

0 -100

12

Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj

August 1997

-50

0

50 Tj / C

100

150

200

Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

4

Rev 1.100

Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET

BUK7635-55

100

Sub-Threshold Conduction

1E-01

IF/A 80

1E-02 2%

1E-03

typ

60

98%

Tj/C =

25

40

1E-04

20

1E-05

1E-06

175

0

0

1

2

3

4

5

Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

0

0.5

1

VSDS/V

1.5

Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

1.4

120

WDSS%

110

1.2

Thousands pF

100 90

1.0

80 70

0.8

60

Ciss

50

0.6

40 0.4

30 20

0.2

10

Coss Crss 0 0.01

0.1

1

10

VDS/V

0 20

40

100

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

60

80

100 120 Tmb / C

140

160

180

Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 32 A

12 VGS/V

VDD

+

10

L

VDS = 14V 8

VDS VDS = 44V

6

-

VGS

-ID/100 0

4

2

0

T.U.T.

RGS

0

5

10

15 QG/nC

20

25

30

Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 30 A; parameter VDS

August 1997

R 01 shunt

5

Rev 1.100

Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET

BUK7635-55

+

VDD

RD VDS

-

VGS 0

RG

T.U.T.

Fig.17. Switching test circuit.

August 1997

6

Rev 1.100

Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET

BUK7635-55

MECHANICAL DATA Dimensions in mm

4.5 max 1.4 max

10.3 max

Net Mass: 1.4 g

11 max 15.4

2.5 0.85 max (x2)

0.5

2.54 (x2)

Fig.18. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS Dimensions in mm

11.5

9.0

17.5 2.0

3.8

5.08

Fig.19. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8".

August 1997

7

Rev 1.100

Philips Semiconductors

Product specification

TrenchMOS transistor Standard level FET

BUK7635-55

DEFINITIONS Data sheet status Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification

This data sheet contains final product specifications.

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

August 1997

8

Rev 1.100