TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications.
PINNING - SOT223 PIN
BUK7840-55
QUICK REFERENCE DATA SYMBOL
PARAMETER
MAX.
UNIT
VDS ID Ptot Tj RDS(ON)
Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V
55 10.7 1.8 150 40
V A W ˚C mΩ
PIN CONFIGURATION
SYMBOL
DESCRIPTION
d
4
1
gate
2
drain
3
source
4
drain (tab)
g
2
1
s
3
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL
PARAMETER
CONDITIONS
VDS VDGR ±VGS ID ID
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC)
ID
Drain current (DC)
IDM Ptot Ptot
Drain current (pulse peak value) Total power dissipation Total power dissipation
Tstg, Tj
Storage & operating temperature
RGS = 20 kΩ Tsp = 25 ˚C On PCB in Fig.19 Tamb = 25 ˚C On PCB in Fig.19 Tamb = 100 ˚C Tsp = 25 ˚C Tsp = 25 ˚C On PCB in Fig.19 Tamb = 25 ˚C -
MIN.
MAX.
UNIT
-
55 55 16 10.7 5
V V V A A
-
3.1
A
-
40 10.7 1.8
A W W
- 55
150
˚C
MIN.
MAX.
UNIT
-
2
kV
ESD LIMITING VALUE SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor voltage
Human body model (100 pF, 1.5 kΩ)
January 1998
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
BUK7840-55
THERMAL RESISTANCES SYMBOL
PARAMETER
CONDITIONS
Rth j-sp Rth j-amb
From junction to solder point From junction to ambient
Mounted on any PCB Mounted on PCB of Fig.18
TYP.
MAX.
UNIT
12 -
15 70
K/W K/W
STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown voltage Gate threshold voltage
VGS = 0 V; ID = 0.25 mA
VGS(TO)
Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 150˚C Tj = -55˚C
IDSS
Zero gate voltage drain current
VDS = 55 V; VGS = 0 V;
IGSS
Gate source leakage current
VGS = ±10 V
±V(BR)GSS RDS(ON)
Gate source breakdown voltage IG = ±1 mA Drain-source on-state VGS = 10 V; ID = 5 A resistance
Tj = 150˚C Tj = 150˚C Tj = 150˚C
MIN.
TYP.
MAX.
UNIT
55 50 2.0 1.2 16 -
3.0 0.05 0.04 30 -
4.0 4.4 10 100 1 10 40 74
V V V V V µA µA µA µA V mΩ mΩ
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL
Fig.18. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
January 1998
7
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
BUK7840-55
MECHANICAL DATA Dimensions in mm
6.7 6.3
Net Mass: 0.11 g
B
3.1 2.9
0.32 0.24
0.2
4
A
A
0.10 0.02
16 max
M
7.3 6.7
3.7 3.3 13
2
1 10 max 1.8 max
1.05
0.80
2.3
0.60
0.85 4.6
3 0.1 M
B
(4x)
Fig.19. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8".
January 1998
8
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor Standard level FET
BUK7840-55
DEFINITIONS Data sheet status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification
This data sheet contains final product specifications.
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Jan 3, 1998 - copyright owner. ... in this document does not form part of any quotation or contract, it is believed to be ... from such improper use or sale.
copyright owner. ... information presented in this document does not form part of any quotation or contract, it is believed to be ... from such improper use or sale.
and has integral zener diodes giving. Tj. Junction ... Human body model. -. 2. kV voltage, all ... Zero gate voltage drain current VDS = 30 V; VGS = 0 V;. -. 0.05. 10.
Apr 2, 1993 - 1.8. W. The device is intended for use in. Tj. Junction temperature. 150 ... 10. 100. nA. RDS(ON). Drain-source on-state. VGS = 5 V; ID = 1.7 A.
May 12, 2005 - The graph below shows the RQ values of a house sparrow fed on a ... The expected RQ value for house sparrows metabolizing millet is 0.93.
Nov 14, 2002 - (c) Besides fat, state one other group of compounds which supplies ..... were collected at various locations in the United States at latitudes.
terminal and drain terminal should be electrically shorted to the source to prevent ESD problems. f. TypeR or RMA flux is recommended. After soldering, the flux ...
May 11, 2005 - BIOLOGY ... Do not open this examination paper until instructed to do so. .... Å 3 Å. M05/4/BIOLO/SP2/ENG/TZ1/XX. 2205-6011. Turn over ... Control experiments were also set up in the same way using chopped leaves.
used as discrete transistors in conventional circuits howev- ... Input offset current 2 mA max at IC e 1 mA .... support device or system or to affect its safety or.Missing:
ELECTRICAL CHARACTERISTICS (Tcase = 25 o. C unless otherwise specified). Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit. ICEX. Collector Cut- ...
inférieures, les dents étant implantées à l'équerre par rapport aux mâchoires. Chez le petit Spitz et le Spitz nain/Poméranien, l'absence d'un nombre restreint de ...
3 avr. 2012 - dans un contact étroit et sont implantées bien d'équerre par rapport aux mâchoires. Les dents sont bien disposées et les mâchoires sont ...
ACIER ÉPAISSEUR : 1 ¾ ” POLYURÉTHANE, R-16. Standard+. TRADITIONNEL .... De jauge 14, elles servent à fixer solidement les pentures, les poignées et le ...