GaAs

GaAs FIELD EFFECT TRANSISTOR

GaAs FIELD EFFECT TRANSISTOR

Murata Manufacturing Co., Ltd.

Cat. No. O35E

Contents Small Signal FETs XMFS Series

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1

(XMFS2-M1, XMFS3-M1) cFeatures / Applications / Dimensions

2 cCharacteristics • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 3 cAbsolute Maximum Ratings / Electrical Specifications / S Parameters

Power FETs XMFP Series

••••••••••••••

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4

(XMFP1-M3, XMFP2-M3, XMFP3-M3, XMFP4-M4) cFeatures / Applications / Dimensions cAbsolute Maximum Ratings / Electrical Specifications cS Parameters

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•••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••

cCharacteristics

•••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••

5 6 7

9 Tape Dimensions and Reel Dimensions • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 10 Notice • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 11 Block Diagram of Test System • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 12 Land Patterns and Soldering Condition

•••••••••••••••••••••••••••••••••••••••••••••

cNoise Figure Test System / Power Test System / IM3 Test System

Block Diagram of Application

•••••••••••••••••••••••••••••••••••••••••••••••••••••••

13

cCellular Phone / PHS / BS/CS Receiver / GPS Receiver / Wireless LAN

Test Board

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14

XMFP1-M3 1.8GHz Test Board cLayout / Schematic / Typical Characteristics / Handling of Test Board

XMFP2-M3 1.8GHz Test Board

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15

cLayout / Schematic / Typical Characteristics / Handling of Test Board

XMFP3-M3 0.9GHz Test Board

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16

cLayout / Schematic / Typical Characteristics / Handling of Test Board

XMFP3-M3 1.8GHz Test Board

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17

cLayout / Schematic / Typical Characteristics / Handling of Test Board

XMFP4-M4 0.9GHz Test Board

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18

cLayout / Schematic / Typical Characteristics / Handling of Test Board

XMFP4-M4 1.8GHz Test Board

•••••••••••••••••••••••••••••••••••••••••••••••••••••

cLayout / Schematic / Typical Characteristics / Handling of Test Board

19

GaAs

GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series

XMFS Series are designed for low noise applications up to C-band (to 6GHz). These devices are supplied in the plastic packages. (SOT-143)

cFEATURES 1. Low Noise Figure. 2. High Associated Gain.

cAPPLICATIONS aLow Noise Amplifier. (for Wireless LAN, DBS tuner/converter, GPS receiver) aOscillator. (for Wireless LAN, DBS tuner/converter, GPS receiver)

XMFS2-M1

XMFS3-M1

cDIMENSIONS XMFS2-M1

1.5

0.65

B

(4)

0.3

(1)

(4)

(3)

Pin (1): Source (2): Gate (3): Source (4): Drain

Marking A : Part No. B : Lot No.

2.9

A

Bk

(2)

1.9

B

0.8

0.8 0.3

(1)

(3)

2.9

A

Ak

(2)

1.9

0.65

0.4

0.4

1.5

XMFS3-M1

Pin (1): Source (2): Gate (3): Source (4): Drain

Marking A : Part No. B : Lot No.

(in mm)

1

cABSOLUTE MAXIMUM RATINGS (Ta=25:) VDS

✽

VGS

ID

Ptot ✽

Tch

Tstg

XMFS2-M1

6V

e3V

100mA

300mW

150:

e55 to 150:

XMFS3-M1

5V

e3V

60mA

200mW

150:

e55 to 150:

Gas

: Power Dissipation (Tc=25:)

cELECTRICAL SPECIFICATIONS (Ta=25:) VGSS

IDSS

gm

VGS (OFF)

Test

IGS=e10µA

VDS=3V

VDS=3V

VDS=3V

VDS=3V

Conditions

VDS=0V

VGS=0V

ID=30mA

ID=1mA

ID=10mA

60mA

40mS

e5.0V

Min. XMFS2-M1

60mS

Typ. 100mA VDS=3V

VDS=3V

VDS=3V

VDS=3V

VDS=0V

VGS=0V

ID=10mA

ID=1mA

ID=10mA

15mA

30mS

e3.0V

Min.

e1.0V

34mS

Typ. e3V

Max.

cS PARAMETERS

15dB

S21

(VDS=3.0V, ID=10mA)

S12

XMFS3-M1 S22

freq. MAG ANG MAG ANG MAG ANG MAG ANG (MHz)

S11 K

S21

S12

S22

MSG MAG MAG ANG MAG ANG MAG ANG MAG ANG (dB) (dB)

500 0.988 e15.7 3.780 168.0 0.025 83.5 0.676 e12.2 0.01 21.82

0.996 e10.9 2.844 172.1 0.014

89.2 0.771 e8.1

K

MSG MAG (dB) (dB)

0.05 23.16

1000 0.949 e30.2 3.640 149.6 0.048 73.3 0.666 e20.8 0.20 18.81

0.972 e21.0 2.783 157.4 0.026

78.7 0.772 e13.8 0.18 20.25

1500 0.862 e44.4 3.496 133.3 0.069 64.2 0.643 e30.2 0.41 17.05

0.917 e30.8 2.734 144.4 0.038

72.6 0.768 e20.2 0.39 18.56

2000 0.783 e57.9 3.341 118.6 0.086 56.2 0.606 e39.1 0.55 15.89

0.872 e40.0 2.690 132.8 0.049

66.7 0.751 e26.4 0.51 17.43

2500 0.704 e72.1 3.165 104.6 0.101 49.4 0.561 e46.9 0.68 14.97

0.828 e50.1 2.630 121.2 0.058

61.5 0.724 e31.8 0.62 16.54

3000 0.628 e86.0 2.990 92.0 0.113 43.6 0.511 e54.0 0.80 14.21

0.780 e59.6 2.559 110.8 0.066

57.9 0.692 e36.5 0.74 15.89

3500 0.563 e100.8 2.838 79.8 0.125 38.8 0.461 e60.5 0.89 13.58

0.741 e69.6 2.508 100.6 0.073

54.7 0.657 e40.7 0.83 15.36

4000 0.500 e116.2 2.679 68.4 0.134 35.1 0.418 e66.5 0.98 13.01

0.690 e79.8 2.434

90.8 0.079

53.4 0.626 e44.3 0.94 14.91

4500 0.446 e132.1 2.555 57.4 0.143 31.6 0.386 e73.5 1.04

11.24 0.638 e89.0 2.382

81.8 0.084

52.3 0.608 e48.4 1.02

13.64

72.3 0.091

51.9 0.589 e53.8 1.08

12.36

5000 0.403 e149.1 2.423 46.4 0.153 28.1 0.355 e82.4 1.09

10.19 0.587 e98.6 2.327

5500 0.377 e167.3 2.314 36.0 0.163 25.0 0.327 e92.1 1.11

9.52 0.539 e108.4 2.279

63.4 0.098

52.8 0.571 e59.2 1.11

11.65

172.7 2.210 25.1 0.175 21.5 0.307 e104.0 1.10

9.08 0.497 e119.6 2.254

54.1 0.108

53.4 0.561 e65.3 1.08

11.53

6000 0.368

2

0.4dB

e0.3V

60mA

XMFS2-M1 S11

0.4dB

e3V

Conditions

XMFS3-M1

12dB

IGS=e10µA

Max. Test

Fmin

cCHARACTERISTICS XMFS2-M1 ID vs. VGS

ID vs. VDS 100

100

ID (mA)

VDS = 3.0V

VGS = 0V

Drain Current

50

0 −2

5 Drain - Source Voltage VDS (V)

−1 Gate - Source Voltage VGS (V)

Gas,Fmin vs. f

20

3 10 2 5

1

Gas (dB)

4 MSG

Associated Gain

VDS = 3.0V ID = 10mA 15

5

20

5

Stability Factor K

Maximum Stable Gain

MSG (dB)

MSG,K vs. f

VDS = 3.0V ID = 10mA 4 15 3 Gas

10

2 5

1

K 0

0

Fmin 5

2

0

0 2

Frequency f (GHz)

5 Frequency

Fmin (dB)

0 0

50

Minimum Noise Figure

Drain Current

ID (mA)

VGS = e0.2 V /STEP

0

f (GHz)

XMFS3-M1 ID vs. VGS

ID vs. VDS 40

40 VDS = 3.0V ID (mA)

VGS = 0 V 30

Drain Current

20

10

2 4 Drain - Source Voltage VDS (V)

20

10

0 −2

6

−1 Gate - Source Voltage

MSG,K vs. f

Gas,Fmin vs. f 5

3 10 2 5

1

Gas (dB)

4

Associated Gain

VDS = 3.0V ID = 10mA MSG

5

20

Stability Factor K

Maximum Stable Gain

MSG (dB)

20

15

0 VGS (V)

VDS = 3.0V ID = 10mA 4 15 Gas

3

10 2 5

1

K 0 2

5 Frequency f (GHz)

0

Fmin

0 2

5

Fmin (dB)

0

30

Minimum Noise Figure

Drain Current

ID (mA)

VGS = e 0.2 V / STEP

0

Frequency f (GHz)

3

GaAs

GaAs FIELD EFFECT TRANSISTOR Power FETs XMFP Series

XMFP Series are designed for power applications up to C-band (to 6GHz). These devices are supplied in the plastic packages. (SOT-89✻) (✻ : XMFP4-M4 in the MURATA original plastic package.)

cFEATURES

XMFP1-M3

XMFP2-M3

XMFP3-M3

XMFP4-M4

1. High Output Power. 2. High Linear Power Gain.

cAPPLICATIONS aPower Amplifier. (for Base Stations of all wireless telecommunications.)

cDIMENSIONS XMFP1-M3

XMFP2-M3

4.5

4.5

1.0

(2)

(3)

0.42

0.47

0.42

(1)

(2)

(3)

0.42

0.47

0.42

2.5

Bk

0.4 1.1

0.4 1.1

(1)

0.5

B

2.5

Ak

A

1.0

B

0.5

A

1.5

1.5

Marking Pin (1):Gate A :Part No. (2):Source B :Lot No. Plastic with Heat Sink (3):Drain

Marking Pin (1):Gate A:Part No. (2):Source B:Lot No. Plastic with Heat Sink (3):Drain

XMFP4-M4 XMFP3-M3 A

B

0.6

6.0

(2)

(3)

0.42

0.47

0.42

(1)

(2)

(3)

0.5

0.8

0.5

1.5 Marking Pin (1):Gate A:Part No. (2):Source B:Lot No. Plastic with Heat Sink (3):Drain

4

4.2 0.4

1.1

0.4 1.1

(1)

Ak

1.0

Ck

2.5

B

1.0

A

0.5

4.5

2.1 Marking Pin (1):Gate A:Part No. (2):Source B:Lot No. Plastic with Heat Sink (3):Drain

(in mm)

cABSOLUTE MAXIMUM RATINGS (Ta=25:)

✽1:

VGSO

VGDO

ID

Ptot (✽1)

Tch

Tstg

XMFP1-M3

e6V

e8V

350mA

1.2W

150:

e55 to 150:

XMFP2-M3

e6V

e8V

700mA

2.5W

150:

e55 to 150:

XMFP3-M3

e9V

e12V

2.2A

3.6W

150:

e55 to 150:

XMFP4-M4

e9V

e12V

4.0A

8.0W

150:

e55 to 150:

Power Dissipation (Tc=25:)

cELECTRICAL SPECIFICATIONS (Ta=25:) VGDO

IDSS (✽1)

gm

VGS (OFF)

IG=e50µA

VDS=3V VGS=0V

VDS=3V ID=120mA

VDS=3V ID=1mA

Min.

200mA

70mS

e3.8V

Typ.

280mA

100mS

e2.8V

Test Conditions

XMFP1-M3

e8V

350mA

IG=e100µA

VDS=3V VGS=0V

VDS=3V ID=270mA

VDS=3V ID=1mA

Min.

400mA

150mS

e3.8V

Typ.

550mA

220mS

e2.8V

Max. Test Conditions

XMFP2-M3

XMFP3-M3

700mA

IG=e600µA

VDS=5V VGS=0V

VDS=5V ID=600mA

VDS=3V ID=3mA

Min.

1.2A

450mS

e4.0V

Typ.

1.7A

520mS

e3.0V

XMFP4-M4

2.2A

IG=e1200µA

VDS=5V VGS=0V

VDS=5V ID=600mA

VDS=3V ID=6mA

Min.

2.8A

700mS

e4.5V

Typ.

3.3A

900mS

e3.6V

Max.

e12V

4.0A

GLP

VDS=4V, ID=0.5IDSS, f=1.9GHz (✽ 2: Pin=10dBm)

23dBm

45%

Channel to case

100:/W VDS=4V, ID=0.5IDSS, f=1.9GHz (✽ 2: Pin=15dBm)

26dBm

45%

Channel to case

15dB 50:/W

VDS=4V, ID=0.8A, f=1.9GHz (✽ 2: Pin=20dBm)

30dBm

45%

Channel to case

12dB

e2.0V

e2.8V

Rth (✽3)

16dB

e2.0V

e12V

Max. Test Conditions

ηadd (✽2)

e2.0V

e8V

Max. Test Conditions

Po (✽2)

30:/W VDS=4.8V, ID=1.6A, f=0.9GHz (✽ 2: Pin=24dBm)

35dBm

45%

Channel to case

15dB 15:/W

✽1:

Pulsed Measurement; duty cycle 1:100; tON=100µs ✽3: Vf Measurement

5

cS PARAMETERS XMFP1-M3 (VDS=4.0V, ID=75mA) S11 freq. (MHz) 500

S21

XMFP2-M3 (VDS=4.0V, ID=200mA)

S12

S11

S22

S21

S22

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

MAG

0.9587

e31.983

6.6974

153.199

0.0249

71.266

0.4425

e28.847

0.8770

e71.865

9.7876

130.949

0.0343

52.123

0.2751 e108.618

ANG

600

0.9586

e37.456

6.5851

148.419

0.0292

63.046

0.4386

e31.590

0.8646

e81.964

9.1576

123.620

0.0396

45.783

0.2864 e114.149

700

0.9483

e43.885

6.4963

143.397

0.0319

59.868

0.4425

e37.563

0.8355

e92.127

8.4951

116.911

0.0444

41.325

0.3154 e122.892

800

0.9390

e49.546

6.3563

138.715

0.0361

56.069

0.4371

e42.450

0.8225 e100.965

7.8838

110.819

0.0461

36.515

0.3260 e127.743

900

0.9247

e55.138

6.2270

134.058

0.0395

52.952

0.4330

e46.806

0.8037

e108.901

7.3472

105.358

0.0484

32.045

0.3409 e132.763

1000

0.9109

e60.730

6.1024

129.327

0.0427

49.592

0.4287

e51.552

0.7902

e116.129

6.8492

100.128

0.0499

30.420

0.3531 e137.398

1100

0.8977

e65.966

5.9368

125.047

0.0451

46.975

0.4227

e55.801

0.7769

e122.561

6.3943

95.472

0.0506

27.404

0.3621 e140.887

1200

0.8823

e71.198

5.7919

120.780

0.0485

42.456

0.4202

e60.198

0.7669 e128.732

5.9965

91.050

0.0523

24.696

0.3706 e144.004

1300

0.8674

e76.221

5.6384

116.595

0.0507

39.896

0.4116

e64.567

0.7561 e134.157

5.6390

86.942

0.0531

23.752

0.3797 e147.105

1400

0.8545

e81.032

5.4922

112.539

0.0531

36.207

0.4096

e68.452

0.7483 e139.201

5.3096

82.941

0.0533

21.022

0.3871 e149.961

1500

0.8422

e85.714

5.3574

108.572

0.0553

33.730

0.4057

e72.427

0.7422 e144.061

5.0259

79.108

0.0543

18.846

0.3927 e152.384

1600

0.8300

e90.298

5.2145

104.691

0.0566

31.275

0.3993

e76.642

0.7396 e148.433

4.7756

75.502

0.0547

18.292

0.4008 e154.557

1700

0.8178

e94.726

5.0768

100.923

0.0588

28.301

0.3936

e80.066

0.7324 e152.671

4.5217

71.951

0.0553

16.453

0.4044 e157.068

1800

0.8053

e99.030

4.9484

97.272

0.0597

26.058

0.3914

e83.790

0.7302 e156.702

4.3134

68.448

0.0561

15.483

0.4118 e159.072

1900

0.7958 e103.155

4.8243

93.671

0.0607

23.642

0.3885

e87.091

0.7277 e160.468

4.1181

65.211

0.0562

14.225

0.4160 e160.790

2000

0.7818 e107.298

4.7032

90.130

0.0617

20.677

0.3836

e91.208

0.7223 e163.986

3.9333

62.033

0.0567

13.387

0.4202 e163.051

XMFP4-M4 (VDS=5.0V, ID=1400mA)

XMFP3-M3 (VDS=4.0V, ID=600mA) S11 freq. (MHz) 500

6

S12

MAG

ANG

0.8749 e129.906

S21

S12

S22

MAG

ANG

MAG

ANG

MAG

7.3569

106.376

0.0306

42.435

0.5902

S11 ANG

MAG

S21 ANG

S12

S22

MAG

ANG

MAG

ANG

MAG

ANG

e176.886 0.9483 e153.644

4.6733

95.040

0.0180

3.928

0.7952

173.455

e178.769 0.9336 e161.920

3.8911

89.563

0.0200

25.331

0.7604

175.379

600

0.8817 e139.579

6.3705

100.279

0.0320

35.917

0.5755

700

0.8697 e147.132

5.5697

95.302

0.0339

35.583

0.5927

179.149

0.9379

e166.270

3.3939

85.920

0.0202

32.534

0.7795

174.263

800

0.8749 e153.098

4.9479

90.887

0.0351

36.705

0.5899

176.773

0.9370 e170.315

2.9696

82.271

0.0194

26.084

0.7577

172.169

900

0.8717 e158.250

4.4673

87.019

0.0370

35.311

0.5970

175.001

0.9343 e173.695

2.6686

79.041

0.0231

26.826

0.7755

171.397

1000

0.8701 e162.670

4.0497

83.381

0.0378

35.376

0.6000

173.178

0.9374 e176.490

2.4012

75.931

0.0225

28.370

0.7649

169.704

1100

0.8677 e166.491

3.7113

80.325

0.0397

35.815

0.6034

171.422

0.9326 e179.142

2.1995

73.307

0.0227

27.848

0.7663

168.117

1200

0.8673 e170.142

3.4221

77.135

0.0413

35.931

0.5985

169.760

0.9328

178.395

2.0197

70.303

0.0244

28.428

0.7671

167.040

1300

0.8653 e173.178

3.1799

74.325

0.0433

35.506

0.6026

168.422

0.9361

176.344

1.8861

67.877

0.0243

29.705

0.7650

165.944

1400

0.8620 e176.019

2.9630

71.545

0.0447

35.631

0.6027

166.577

0.9331

174.157

1.7553

65.078

0.0258

26.847

0.7672

164.335

1500

0.8603 e178.805

2.7804

68.732

0.0461

35.492

0.6059

164.972

0.9322

172.155

1.6428

62.704

0.0273

27.978

0.7683

163.170

1600

0.8644

178.704

2.6287

66.108

0.0484

35.135

0.6044

163.596

0.9342

170.265

1.5525

59.923

0.0280

28.868

0.7684

161.365

1700

0.8607

176.332

2.4775

63.495

0.0497

34.485

0.6012

161.774

0.9332

168.233

1.4616

57.524

0.0277

28.897

0.7631

160.355

1800

0.8607

173.926

2.3544

60.811

0.0522

34.650

0.6049

160.112

0.9337

166.555

1.3947

55.016

0.0299

27.631

0.7694

159.108

1900

0.8627

171.824

2.2413

58.349

0.0532

34.417

0.6027

158.604

0.9343

164.897

1.3234

52.666

0.0299

28.438

0.7681

157.451

2000

0.8585

169.715

2.1402

55.976

0.0555

35.188

0.6053

157.147

0.9350

163.101

1.2664

50.213

0.0323

27.336

0.7627

156.258

cCHARACTERISTICS XMFP1-M3 ID vs. VGS

ID vs. VDS 400

400

ID (mA)

200

VGS = 0V

Drain Current

ID (mA)

300

Drain Current

VGS =e0.5 V /STEP

100

0 Drain - Source Voltage

VDS = 3.0V 300

200

100

0 −4

6 VDS (V)

−2 Gate - Source Voltage

0 VGS (V)

P0, ηadd vs. Pin 100

ηadd (%)

VDS = 4.0V I D = 0.5 IDSS f = 1.9 GHz 20

Output Power

P0 50

ηadd

10

0

−10

Power Added Efficiency

P0 (dBm)

30

0 0 Input Power

10 Pin (dBm)

XMFP2-M3 ID vs. VDS

ID vs. VGS

VGS =e0.5 V /STEP 600

600

Drain Current

Drain Current

400

200

0 Drain - Source Voltage

VDS = 3.0V

ID (mA)

ID (mA)

VGS = 0V

400

200

0 −4

6 VDS (V)

−2 Gate - Source Voltage

0 VGS (V)

Po, ηadd vs. Pin 100

20

ηadd (%)

VDS = 4.0V I D = 0.5 IDSS f = 1.9 GHz Po

50

ηadd

10

0 −10

0 Input Power

10 Pin (dBm)

Power Added Efficiency

Output Power

Po (dBm)

30

0 20

7

cCHARACTERISTICS XMFP3-M3 ID vs. VDS

ID vs. VGS

2000

2000

ID (mA)

VGS = 0V

Drain Current

Drain Current

ID (mA)

VGS =e0.5 V /STEP

1000

0 0 Drain - Source Voltage

VDS = 5.0V

1000

0 −4

10 VDS (V)

−2 Gate - Source Voltage

0

VGS (V)

Po, ηadd vs. Pin

Po

50

20

ηadd 10

0

10 Input Power

20

Power Added Efficiency

Output Power

Po (dBm)

30

ηadd (%)

100 VDS = 4.0V I D = 0.8A f = 1.9 GHz

0

Pin (dBm)

XMFP4-M4 ID vs. VDS

ID vs. VGS

4000

4000

ID (mA)

0 0 Drain - Source Voltage

2000

0 −4

10 VDS (V)

Po, ηadd vs. Pin

50

ηadd

20

0

10 Input Power

20 Pin (dBm)

0 30

0

VGS (V)

ηadd vs. Pin 100

Po (dBm)

40

Output Power

ηadd (%)

Po

30

Power Added Efficiency

Po (dBm) Output Power

VDS = 4.8V I D = 1.6A f = 0.9 GHz

10

8

Po, 100

40

−2 Gate - Source Voltage

VDS = 4.8V I D = 1.6A f = 1.8 GHz 30

ηadd (%)

2000

VDS = 5.0V

Po 50

20

ηadd 10 0

10 Input Power

20 Pin (dBm)

0 30

Power Added Efficiency

VGS = 0V

Drain Current

Drain Current

ID (mA)

VGS =e0.5 V /STEP

Land Patterns and Soldering Condition

cLAND PATTERNS The recommended solder land patterns are shown below. XMFP1-M3 XMFP2-M3 XMFP3-M3

XMFP4-M4

2.8 0.6

2.5

3.6

XMFS2-M1 XMFS3-M1

1.8 1.25

2.2 3.7

0.95 2.35

2.4

0.22 0.79

1.0

1.59 1.85

1.15 1.85

1.9

1.0

1.5

0.8

0.8

0.62

1.5

0.67

2.1

1.0

0.62

2.1

1.4

1.0

(in mm)

cSOLDERING CONDITION The recommended soldering condition is shown below.

230 to 240: (within 10 sec.)

Temperature

200:

60 f 10 sec. 150 f 10:

60 to 120 sec.

Time

9

Tape Dimensions and Reel Dimensions

cTAPE DIMENSIONS

Symbol P0

d

C L1

D

B

P2

XMFS2-M1 XMFS3-M1

P0

4.0f0.1

B

1.75f0.1

C

3.5f0.05

D

8.0f0.2

W1

XMFP4-M4

5.5f0.05 12.0f0.2

φ 1.5d0.1/e0

d P1 P1

XMFP1-M3 XMFP2-M3 XMFP3-M3

4.0f0.1

8.0f0.1

K

2.0f0.05

P2

User Feed Direction (in mm)

L1

3.3f0.1

4.45f0.1

6.25f0.1

W1

3.4f0.1

4.8f0.1

6.3f0.1

K

1.5f0.1

Symbol

XMFS2-M1 XMFS3-M1

1.8f0.1

cREEL DIMENSIONS

A

B

C

(in mm)

W

10

XMFP1-M3 XMFP2-M3 XMFP3-M3

A

φ 178f2

B

φ 62f0.5

C

φ 13f0.5

W

10.0f1.5

XMFP4-M4

13.5f1.5

Notice

cNOTICE 1. Storage aPlease store in manufacturer's packing under the following conditions. Temperature: e10˚C to d40˚C, Humidity: 30 to 85% RH aAs more than 6 months storage might degrade solderability, please confirm solderability before usage in that case. aPlease do not store in the following environments, which could damage electrical characteristics or solderability. 1. Dusty place 2. Ambient air containing corrosive gases (Cl2, H2S, NH3, SO2, NOx, etc.) 3. Ambient air containing volatile or combustible gases 4. Depressurized or pressurized air 5. Where water may splash or where humidity is so high that condensation could easily occur 6. Environment subject to strong static charges or electromagnetic field 7. Exposed to direct sunlight 8. In liquid 9. Influenced by low frequency vibration 10. Other environments with risks similar to 1. through 9.

2. Handling Precautions aAs electrostatic field or discharge may degrade this product, please take methods such as wearing wrist strap, grounding working desk or equipments to avoid this damage. aPlease do not touch the electrodes with bare hands, which may degrade solderability. aPlease do not drop or throw this product directly to the floor. aWhen you transport the products, please pack them so as to keep them without excessive mechanical vibration or shock through its transportation. aPlease contact the manufacturer before cleaning the product. Please do not use flon, trichloroethane and so on to protect the global environment. aPlease do not attach water droplets or dust to the product. Please contact the manufacturer if you have any questions concerning the handling of this product. aHeat management is necessary in order to use this product.

Please contact the manufacturer before storing the products in any of the above environments.

11

Block Diagram of Test System

cNOISE FIGURE TEST SYSTEM Synthesizer

Mixer

Noise Figure Meter VDS

VGS

Noise Source

Bias Tee

Tuner

D.U.T.

Tuner

Bias Tee Low Noise Amplifier

Gate Bias ID Drain Bias

cPOWER TEST SYSTEM

Synthesizer

RF Amplifier Power Meter

Power Meter

VDS

VGS

D.U.T.

Tuner

Bias Tee

Tuner

Bias Tee

ATT.

Power Meter

Rg(=100Ω) ID Gate Bias Drain Bias

cIM3 TEST SYSTEM Power Meter Synthesizer 1

Amplifier 1 3dB HYB

Synthesizer 2

VAR. ATT.

Amplifier 2

Spectrum Analyzer

VDS

VGS

Bias Tee

Tuner

D.U.T.

Tuner

Bias Tee

Rg(=100Ω) ID Gate Bias Drain Bias

12

ATT.

Power Meter

Block Diagram of Application

cCELLULAR PHONE

Antenna

Band Pass Filter

Switch or Duplexer

cPHS

Low Noise Amplifier

Band Pass Filter

Antenna

Mixer

Band Pass Filter

XMFS2 XMFS3

Mixer

XMFS2 XMFS3

Switch XMFP2 Antenna

XMFP3 XMFP1 XMFP4 XMFP2

Detector

Low Pass Filter

Low Noise Amplifier

Antenna Diversity Switch

Power Amplifier

Driver Band Pass Amplifier Filter

Low Pass Filter

Power Driver Amplifier Amplifier

Band Pass Filter

Mixer

Mixer Pin Driver /BIAS

cBS/CS RECEIVER

cGPS RECEIVER Antenna

Antenna

Mixer

Low Noise Low Noise Low Noise Band Pass Amplifier 1 Amplifier 2 Amplifier 3 Filter

Mixer

IF IF Amplifier 1 Amplifier 2

Band Pass Filter

Low Noise Amplifier XMFS2 XMFS3

Oscillator XMFS2

cWIRELESS LAN

Antenna

Band Pass Filter

Switch or Duplexer

Band Pass Filter

Low Noise Amplifier

Mixer

XMFS2 XMFS3 XMFP1 XMFP2

Power Amplifier

Band Pass Filter

Mixer

13

GaAs

GaAs FIELD EFFECT TRANSISTOR XMFP1-M3 1.8GHz Test Board

cLAYOUT

cSCHEMATIC VDD

50 VGG

C6 ΓS C2

RFin

35

XMFP1

C1

C4

RFout

R2 R1

FET

C7

R1 RFin

RFout C1 C2

R2

C3

C4

C5

C7 Γ for max output power matching ΓS=0.64∠110 ΓL=0.23∠165

C6 VDD

VGG

(mm)

Substrate(Glass-epoxy): t=0.8mm,εr=4.4 Chip C : GRM39series(MURATA) Chip R : MCR03series(ROHM) Supply Voltage: VGG=e2.5V,VDD=4.8V

cTYPICAL CHARACTERISTICS Po, ηadd vs. Pin

100

ηadd (%)

20 Po 50

10

ηadd

0

0 0 Input Power Pin(dBm)

10

Power Added Efficiency

Output Power Po (dBm)

VDD = 4.8V VGG = e2.5V f = 1.8GHz

e10

Parts List FET XMFP1-M3 C1 1000pF C2 2pF C3 4700pF C4 0.5pF C5 1pF C6 4700pF C7 1000pF R1 1kΩ R2 1kΩ

cHANDLING OF TEST BOARD

30

14

C3

C5 ΓL

1. Precaution Before handling test boards, avoid any cause of electrostatic discharge and surge. The measurement instruments must be grounded, and the operator is recommended to wear a wrist strap. 2. Bias Procedure aSet slowly the gate to source voltage, to VGG recommended for each test board. aAdjust gradually the drain to source voltage, to VDD. aCheck the ID is about 0.5IDSS. If it is not, adjust VGG so that ID approaches 0.5IDSS. aInput RF power to RF port of test board from lower level, and measure electrical characteristics. aWhen biasing off, the reverse procedure is recommended. aNote that the bias condition during test should not exceed its absolute maximum ratings.

GaAs

GaAs FIELD EFFECT TRANSISTOR XMFP2-M3 1.8GHz Test Board

cLAYOUT

cSCHEMATIC VDD

50

VGG C6 C2

RFin 35

XMFP2

C1

C3

R2

ΓS

R1

C5 ΓL

C4

FET

RFout C7

R1 RFin

RFout C1

C2 R2

C3

C4

C5

C7

Γ for max output power matching ΓS=0.62∠152 ΓL=0.43∠177

C6 VGG

VDD (mm)

Substrate(Glass-epoxy):t=0.8mm,εr=4.4 Chip C:GRM39series(MURATA) Chip R:MCR03series(ROHM) Supply Voltage:VGG=e1.8V,VDD=4.8V

cTYPICAL CHARACTERISTICS Po, ηadd vs. Pin

cHANDLING OF TEST BOARD 100

ηadd (%)

Output Power Po (dBm)

VDD = 4.8V VGG = e1.8V f = 1.8GHZ 20 Po 50

10

0 e10

ηadd

0

10

Input Power Pin (dBm)

0 20

Power Added Efficiency

30

Parts List FET XMFP2-M3 C1 1000pF C2 2pF C3 4700pF C4 1pF C5 1pF C6 4700pF C7 1000pF R1 1kΩ R2 1kΩ

1. Precaution Before handling test boards, avoid any cause of electrostatic discharge and surge. The measurement instruments must be grounded, and the operator is recommended to wear a wrist strap. 2. Bias Procedure aSet slowly the gate to source voltage, to VGG recommended for each test board. aAdjust gradually the drain to source voltage, to VDD. aCheck the ID is about 0.5IDSS. If it is not, adjust VGG so that ID approaches 0.5IDSS. aInput RF power to RF port of test board from lower level, and measure electrical characteristics. aWhen biasing off, the reverse procedure is recommended. aNote that the bias condition during test should not exceed its absolute maximum ratings.

15

GaAs

GaAs FIELD EFFECT TRANSISTOR XMFP3-M3 0.9GHz Test Board

cLAYOUT

cSCHEMATIC 50

VDD VGG C6

XMFP3

C2

RFin

C3

R2

ΓS

35

R1 RFin C1

R2

C2

RFout C4

C3

C7

C1

R1

C5 ΓL

C4

FET

RFout C7

C5 Γ for max output power matching ΓS=0.73∠e148 ΓL=0.77∠e162

C6 VGG

VDD (mm)

Substrate(Glass-epoxy):t=0.8mm,εr=4.4 Heat sink(Duralumin):50×35×10mm Chip C:GRM39series(MURATA) Chip R:MCR03series(ROHM) Supply Voltage:VGG=e3.5V,VDD=4.8V

cTYPICAL CHARACTERISTICS

cHANDLING OF TEST BOARD

Po, ηadd vs. Pin

100

ηadd (%)

VDD = 4.8V VGG = e3.5V f = 0.9GHz

Po 50

20

ηadd 10

0 0

10 Input Power Pin (dBm)

16

20

Power Added Efficiency

Output Power Po (dBm)

30

Parts List FET XMFP3-M3 C1 1000pF C2 7pF C3 4700pF C4 7pF C5 1pF C6 4700pF C7 1000pF R1 1kΩ R2 1kΩ

1. Precaution Before handling test boards, avoid any cause of electrostatic discharge and surge. The measurement instruments must be grounded, and the operator is recommended to wear a wrist strap. 2. Bias Procedure aSet slowly the gate to source voltage, to VGG recommended for each test board. aAdjust gradually the drain to source voltage, to VDD. aCheck the ID is about 0.5IDSS. If it is not, adjust VGG so that ID approaches 0.5IDSS. aInput RF power to RF port of test board from lower level, and measure electrical characteristics. aWhen biasing off, the reverse procedure is recommended. aNote that the bias condition during test should not exceed its absolute maximum ratings.

GaAs

GaAs FIELD EFFECT TRANSISTOR XMFP3-M3 1.8GHz Test Board

cLAYOUT

cSCHEMATIC VDD

50 VGG

C6 ΓS C3

RFin 35

XMFP3

C1

C5 ΓL C4

RFout

R2 R1

C2

FET

C7

R1 RFin

RFout R2

C1

C2 C3

C4 C5

C7 Γ for max output power matching ΓS=0.82∠177 ΓL=0.73∠e166

C6 VGG

VDD (mm)

Substrate(Glass-epoxy):t=0.8mm,εr=4.4 Heat sink(Duralumin):50×35×10mm Chip C:GRM39series(MURATA) Chip R:MCR03series(ROHM) Supply Voltage:VGG=e3.5V,VDD=4.8V

cTYPICAL CHARACTERISTICS Po, ηadd vs. Pin

cHANDLING OF TEST BOARD 100

ηadd (%)

VDD = 4.8V VGG = e3.5V f = 1.8GHz

Po

20

50

ηadd 10

0 0

10 Input Power Pin (dBm)

20

Power Added Efficiency

Output Power Po(dBm)

30

Parts List FET XMFP3-M3 C1 1000pF C2 2pF C3 4700pF C4 2pF C5 1pF C6 4700pF C7 1000pF R1 1kΩ R2 1kΩ

1. Precaution Before handling test boards, avoid any cause of electrostatic discharge and surge. The measurement instruments must be grounded, and the operator is recommended to wear a wrist strap. 2. Bias Procedure aSet slowly the gate to source voltage, to VGG recommended for each test board. aAdjust gradually the drain to source voltage, to VDD. aCheck the ID is about 0.5IDSS. If it is not, adjust VGG so that ID approaches 0.5IDSS. aInput RF power to RF port of test board from lower level, and measure electrical characteristics. aWhen biasing off, the reverse procedure is recommended. aNote that the bias condition during test should not exceed its absolute maximum ratings.

17

GaAs

GaAs FIELD EFFECT TRANSISTOR XMFP4-M4 0.9GHz Test Board

cLAYOUT

cSCHEMATIC 50

VDD VGG C6 XMFP4

C2

RFin

C3

ΓS

35

R2

C1 C2

RFout C4

C3

C7

C1

C4

RFout

R2

R1 RFin

C5 ΓL

R1

FET

C7

C5

Γ for max output power matching ΓS=0.67∠e151 ΓL=0.86∠e166

C6 VDD

VGG

(mm)

Substrate(Glass-epoxy):t=0.8mm,εr=4.4 Heat sink(Duralumin):50×35×10mm Chip C:GRM39series(MURATA) Chip R:MCR03series(ROHM) Supply Voltage:VGG=e6.0V,VDD=4.8V

cTYPICAL CHARACTERISTICS Po, ηadd vs. Pin

cHANDLING OF TEST BOARD 100

ηadd (%)

Output Power Po(dBm)

VDD = 4.8V VGG = e6.0V f = 0.9GHz 30 Po 50

20

ηadd

10 0

10

20

Input Power Pin (dBm)

18

0 30

Power Added Efficiency

40

Parts List FET XMFP4-M4 C1 1000pF C2 5pF C3 4700pF C4 10pF C5 1pF C6 4700pF C7 1000pF R1 2.2kΩ R2 2.2kΩ

1. Precaution Before handling test boards, avoid any cause of electrostatic discharge and surge. The measurement instruments must be grounded, and the operator is recommended to wear a wrist strap. 2. Bias Procedure aSet slowly the gate to source voltage, to VGG recommended for each test board. aAdjust gradually the drain to source voltage, to VDD. aCheck the ID is about 0.5IDSS. If it is not, adjust VGG so that ID approaches 0.5IDSS. aInput RF power to RF port of test board from lower level, and measure electrical characteristics. aWhen biasing off, the reverse procedure is recommended. aNote that the bias condition during test should not exceed its absolute maximum ratings.

GaAs

GaAs FIELD EFFECT TRANSISTOR XMFP4-M4 1.8GHz Test Board

cLAYOUT

cSCHEMATIC VDD

50

VGG XMFP4

C6 ΓS C4

35

C1

RFin

C4

R2 R1

C2

FET

RFout C7

RFout R2

C1

C7

C5

C3

Γ for max output power matching ΓS=0.80∠e170 ΓL=0.80∠e158

C6 VDD

VGG

(mm)

Substrate(Glass-epoxy):t=0.8mm,εr=4.4 Heat sink(Dulalumin) :50×35×10mm Chip C:GRM39series(MURATA) Chip R:MCR03series(ROHM) Supply Voltage:VGG=e6.0V,VDD=4.8V

cTYPICAL CHARACTERISTICS Po, ηadd vs. Pin 40

100

ηadd (%) 50

20

ηadd

10 0

10

20

Input Power Pin (dBm)

0 30

Power Added Efficiency

30 Po

Parts List FET XMFP4-M4 C1 1000pF C2 3pF C3 4700pF C4 3pF C5 1pF C6 4700pF C7 1000pF R1 2.2kΩ R2 2.2kΩ

cHANDLING OF TEST BOARD

VDD = 4.8V VGG = e6.0V f = 1.8GHz

Output Power Po(dBm)

C3

RFin

C2 R1

C5 ΓL

1. Precaution Before handling test boards, avoid any cause of electrostatic discharge and surge. The measurement instruments must be grounded, and the operator is recommended to wear a wrist strap. 2. Bias Procedure aSet slowly the gate to source voltage, to VGG recommended for each test board. aAdjust gradually the drain to source voltage, to VDD. aCheck the ID is about 0.5IDSS. If it is not, adjust VGG so that ID approaches 0.5IDSS. aInput RF power to RF port of test board from lower level, and measure electrical characteristics. aWhen biasing off, the reverse procedure is recommended. aNote that the bias condition during test should not exceed its absolute maximum ratings.

19

Note: 1. Export Control Murata products should not be used or sold for use in the development, production, stockpiling or utilization of any conventional weapons or mass-destructive weapons (nuclear weapons, chemical or biological weapons, or missiles), or any other weapons. For products which are controlled items subject to “the Foreign Exchange and Foreign Trade Control Law” of Japan, the export license specified by the law is required for export. 2. Please contact our sales representatives or engineers before using our products listed in this catalog for the applications requiring especially high reliability what defects might directly cause damage to other party's life, body or property (listed below) or for other applications not specified in this catalog. q Aircraft equipment w Aerospace equipment e Undersea equipment r Medical equipment t Transportation equipment (automobiles, trains, ships,etc.) y Traffic signal equipment u Disaster prevention / crime prevention equipment i Data-processing equipment o Applications of similar complexity or with reliability requirements comparable to the applications listed in the above 3. Product specifications in this catalog are as of May 1997, and are subject to change or stop the supply without notice. Please confirm the specifications before ordering any product. If there are any questions, please contact our sales representatives or engineers. 4. The categories and specifications listed in this catalog are for information only. Please confirm detailed specifications by checking the product specification document or requesting for the approval sheet for product specification, before ordering. 5. Please note that unless otherwise specified, we shall assume no responsibility whatsoever for any conflict or dispute that may occur in connection with the effect of our and/or third party's intellectual property rights and other related rights in consideration of your using our products and/or information described or contained in our catalogs. In this connection, no representation shall be made to the effect that any third parties are authorized to use the rights mentioned above under licenses without our consent. 6. None of ozone depleting substances (ODS) under the Montreal Protocol is used in manufacturing process of us.

Headquarters 2-26-10, Tenjin Nagaokakyo-shi, Kyoto 617, Japan Phone:81-75-951-9111



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0 –

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Murata Elettronica S.p.A. Via Sancarlo, 1 20040 Caponago, Milano, Italy Phone:39-2-95743000 Fax:39-2-95740168/95742292



Murata Electronics(UK)Ltd. Oak House, Ancells Road, Ancells Business Park, Fleet, Aldershot Hampshire, GU13 8UN U.K. Phone:44-1252-811666 Fax:44-1252-811777

Murata Electronics(Netherlands)B.V. Daalmeerstraat 4 2131 HC Hoofddorp, The Netherlands Phone:31-23-5698410 Fax:31-23-5698411

Murata Co.,Ltd. Room 709-712, Miramar Tower, 1-23 Kimberly Road, Tsimshatsui, Kowloon, Hong Kong Phone:852-2376-3898 Fax:852-2375-5655

Murata Mfg.Co.,Ltd. Seoul Branch 14th Floor Haesung 2 Bldg., 942-10, Taechi-Dong, Kangnam-Ku, Seoul, Korea Phone:82-2-561-2347 Fax:82-2-561-2722



Beijing Murata Electronics Co.,Ltd. No.11 Tianzhu Road Tianzhu Airport Industry Zone Shunyi County, Beijing 101312 the People's Republic of China Phone:86-10-6456-8822 Fax:86-10-6456-9945 Murata Electronics Trading(Shanghai)Co.,Ltd. Room No.506, West Tower Sun Plaza 88 Xianxia Road, Changning District Shanghai, 200335 P.R.C. Phone:86-21-6270-0611/2/3 Fax:86-21-6270-0614 1997.5.2K