IRF630, SiHF630 Vishay Siliconix
Power MOSFET FEATURES
PRODUCT SUMMARY VDS (V)
• Dynamic dV/dt Rating
200
RDS(on) ()
VGS = 10 V
• Repetitive Avalanche Rated
0.40
Qg (Max.) (nC)
43
• Fast Switching
Qgs (nC)
7.0
• Ease of Paralleling
23
• Simple Drive Requirements
Qgd (nC) Configuration
Single
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB
G
D
COMPLIANT
• Compliant to RoHS Directive 2002/95/EC D
G
Available
RoHS*
S S N-Channel MOSFET
ORDERING INFORMATION Package
TO-220AB IRF630PbF SiHF630-E3 IRF630 SiHF630
Lead (Pb)-free SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C TC = 100 °C
Pulsed Drain Currenta
ID IDM
Linear Derating Factor
UNIT V
9.0 5.7
A
36 0.59
W/°C
EAS
250
mJ
Currenta
IAR
9.0
A
Repetitive Avalanche Energya
EAR
7.4
mJ
Single Pulse Avalanche Energyb Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
for 10 s 6-32 or M3 screw
PD
74
W
dV/dt
5.0
V/ns
TJ, Tstg
- 55 to + 150 300d
°C
10
lbf · in
1.1
N·m
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12). c. ISD 9.0 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91031 S11-0509-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630, SiHF630 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
200
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.24
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
-
-
25
VDS = 160 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance Forward Transconductance
RDS(on) gfs
ID = 5.4 Ab
VGS = 10 V
VDS = 50 V, ID = 5.4 A
μA
-
-
0.40
3.8
-
-
S
-
800
-
Dynamic Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.9 A, VDS = 160 V, see fig. 6 and 13b
-
240
-
-
76
-
-
-
43
-
-
7.0
pF
nC
Gate-Drain Charge
Qgd
-
-
23
Turn-On Delay Time
td(on)
-
9.4
-
-
28
-
-
39
-
-
20
-
-
4.5
-
-
7.5
-
-
-
9.0
-
-
36
-
-
2.0
-
170
340
ns
-
1.1
2.2
nC
Rise Time Turn-Off Delay Time
tr td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VDD = 100 V, ID = 5.9 A, Rg = 12 , RD = 16 , see fig. 10b
Between lead, 6 mm (0.25") from package and center of die contact
D
ns
nH
G
S
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage
IS ISM VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol showing the integral reverse p - n junction diode
D
A G
S
TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/s
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
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Document Number: 91031 S11-0509-Rev. B, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630, SiHF630 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V
101
100 4.5 V 20 µs Pulse Width TC = 25 °C
10-1 10-1
100
ID, Drain Current (A) 91031_02
4.5 V
100
20 µs Pulse Width TC = 150 °C 100
20 µs Pulse Width VDS = 50 V
101
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
91031_03
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance (Normalized)
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V
25 °C
100
4
Top
10-1 10-1
150 °C
10-1
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
101
101
VDS, Drain-to-Source Voltage (V)
91031_01
ID, Drain Current (A)
ID, Drain Current (A)
Top
VDS, Drain-to-Source Voltage (V) 91031_04
3.0 2.5
ID = 5.9 A VGS = 10 V
2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 2 -Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91031 S11-0509-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630, SiHF630
Capacitance (pF)
1600
VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd
1200
Ciss 800
Coss 400 Crss
ISD, Reverse Drain Current (A)
Vishay Siliconix
101 150 °C
25 °C 100
VGS = 0 V
0 100
101
0.5
VDS, Drain-to-Source Voltage (V)
91031_05
2
VDS = 100 V VDS = 40 V
8
4
102 5
10 µs
2
10
100 µs
5
1 ms
2
10 ms
1 5
For test circuit see figure 13
0 0 91031_06
10
20
30
40
QG, Total Gate Charge (nC)
TC = 25 °C TJ = 150 °C Single Pulse
2
0.1
50
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1.5
Operation in this area limited by RDS(on)
5
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
103 VDS = 160 V
12
1.3
1.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 5.9 A
16
0.9
VSD, Source-to-Drain Voltage (V)
91031_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
0.7
0.1 91031_08
2
5
1
2
5
10
2
5
102
2
5
103
2
5
104
VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area
Document Number: 91031 S11-0509-Rev. B, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630, SiHF630 Vishay Siliconix
RD
VDS 10 VGS 8
ID, Drain Current (A)
D.U.T.
RG
+ - VDD 10 V
6
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
4
Fig. 10a - Switching Time Test Circuit 2 VDS 90 %
0 25
50
75
100
125
150
TC, Case Temperature (°C)
91031_09
10 % VGS
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(on)
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
0 − 0.5 0.2
0.1
PDM
0.1 0.05
t1
0.02 0.01
t2
Single Pulse (Thermal Response)
Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC
10-2 10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91031_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
L Vary tp to obtain required IAS
VDS
tp VDD D.U.T.
RG
+ -
IAS
V DD
A
VDS
10 V tp
0.01 Ω
IAS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91031 S11-0509-Rev. B, 21-Mar-11
Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630, SiHF630 Vishay Siliconix
EAS, Single Pulse Energy (mJ)
600
ID 4.0 A 5.7 A Bottom 9.0 A Top
500 400 300 200 100 0
VDD = 50 V 25
91031_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. 50 kΩ
QG
10 V
12 V
0.2 µF 0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS 3 mA
Charge IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91031 S11-0509-Rev. B, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630, SiHF630 Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit +
D.U.T.
Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
+
-
-
Rg
• • • •
+
dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test
+ -
VDD
Driver gate drive P.W.
Period
D=
P.W. Period VGS = 10 Va
D.U.T. lSD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91031.
Document Number: 91031 S11-0509-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information www.vishay.com
Vishay Siliconix
TO-220AB MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
L
13.35
14.02
0.526
0.552 0.150
L(1)
3.32
3.82
0.131
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM • Xi’an and Mingxin actual photo C
b e J(1) e(1)
Revison: 08-Oct-12
Document Number: 71195 1 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice www.vishay.com
Vishay
Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
