NTD5804N, NTDV5804N Power MOSFET
40 V, 69 A, Single N−Channel, DPAK/IPAK Features
Low RDS(on) High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NTDV5804N These Devices are Pb−Free and are RoHS Compliant
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D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS)
VGS
"30
V
ID
69
A
Power Dissipation (RqJC) (Note 1)
TC = 25°C Steady State
Pulsed Drain Current
TC = 100°C TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 36 A, L = 0.3 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
49 PD
71
W
IDM
125
A
TJ, Tstg
−55 to 175
°C
IS
60
A
EAS
195
mJ
4 4 1 2
3
1
DPAK CASE 369C (Surface Mount) STYLE 2
TL
260
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
106
1. Surface−mounted on FR4 board using the minimum recommended pad size.
3 IPAK CASE 369D (Straight Lead DPAK)
4 Drain
°C
THERMAL RESISTANCE MAXIMUM RATINGS
2
MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Parameter
S N−CHANNEL MOSFET
YWW 58 04NG
Continuous Drain Current (RqJC) (Note 1)
69 A
7.5 mW @ 10 V
CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification
Parameter
ID MAX
12 mW @ 5.0 V
40 V
Applications
• • • •
RDS(on) MAX
V(BR)DSS
YWW 58 04NG
• • • • •
2 1 Drain 3 Gate Source
Y WW 5804N G
1 2 3 Gate Drain Source
= Year = Work Week = Device Code = Pb−Free Package
ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 7
1
Publication Order Number: NTD5804N/D
NTD5804N, NTDV5804N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol
Test Condition
Min
Typ
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
45
V
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS/TJ
41
mV/°C
Parameter
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V, VDS = 40 V
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.5
V
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
2.0 7.3
gFS
mV/°C
VGS = 10 V, ID = 30 A
5.7
7.5
VGS = 5 V, ID = 10 A
7.9
12
VDS = 15 V, ID = 15 A
12
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
2460
2850
310
400
215
280 nC
45 VGS = 10 V, VDS = 32 V, ID = 30 A
pF
2.8
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
12.6
10
td(on)
11.8
SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time
tr td(off)
VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W
tf
ns
18.7 26.8 5.9
DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
VSD
VGS = 0 V, IS = 10 A
TJ = 25°C
0.81
TJ = 150°C
0.63
tRR ta tb
21.7 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A
QRR
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V
ns
11.9 9.8 11.8
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTD5804N, NTDV5804N TYPICAL PERFORMANCE CHARACTERISTICS 100
ID, DRAIN CURRENT (A)
4.5 V
70 60 50 40
4.0 V
30 20
75
50 TJ = 100°C 25 TJ = 25°C
3.5 V 0
0.5
1
1.5
2
2.5
0
3
4
5
6
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A TJ = 25°C
0.019 0.017 0.015 0.013 0.011 0.009 0.007 4
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.05 TJ = 25°C 0.04 0.03 VGS = 5 V
0.02 0.01
VGS = 10 V 0 10
20
30
40
50
60
70
80
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000
1.9
VGS = 0 V
ID = 69 A VGS = 10 V
TJ = 150°C IDSS, LEAKAGE (nA)
1.8 1.7 1.6
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.021
0.005
TJ = −55°C 2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
80
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
VGS = 7, 6, 5.8, 5.5, 5.2, 5 V
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
100
TJ = 25°C
10 V
90
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25
0
25
50
75
100
125
150
1000
10
175
TJ = 100°C
100
2
12
22
32
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
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42
NTD5804N, NTDV5804N TYPICAL PERFORMANCE CHARACTERISTICS
C, CAPACITANCE (pF)
5000 4000
VGS, GATE−TO−SOURCE VOLTAGE (V)
15
VGS = 0 V TJ = 25°C
45
QT
10
Ciss
3000 2000
Coss
1000 0 10 5 Vgs
Crss 0
5
10 Vds
15
20
25
30
35
40
VGS Qgs
0
15
15
0
30
0 45
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation 1000
30 VDD = 32 V ID = 30 A VGS = 10 V
100
IS, SOURCE CURRENT (A)
td(off) tf tr td(on)
10
1
10
VGS = 0 V TJ = 25°C 20
10
0
100
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000 I D, DRAIN CURRENT (AMPS)
t, TIME (ns)
Qgd ID = 30 A TJ = 25°C
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
30
VDS
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
6000
100
10 ms
10
1
0.1
100 ms
VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1
1 ms 10 ms dc
1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
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100
1.0
NTD5804N, NTDV5804N
r(t), Effective Transient Thermal Resistance (°C/W)
TYPICAL PERFORMANCE CHARACTERISTICS 10
1
D = 0.5 0.2 0.1 0.05
0.1
0.02 0.01 Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION Package
Shipping†
IPAK (Straight Lead DPAK) (Pb−Free)
75 Units / Rail
NTD5804NT4G
DPAK (Pb−Free)
2500 / Tape & Reel
NTDV5804NT4G
DPAK (Pb−Free)
2500 / Tape & Reel
Order Number NTD5804NG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NTD5804N, NTDV5804N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D
A
E b3
c2
B
Z
D 1
L4
A
4
L3
b2 e
2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
C
H
DETAIL A
3
DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z
c
b 0.005 (0.13)
M
H
C L2
GAUGE PLANE
C L
SEATING PLANE
A1
L1 DETAIL A
ROTATED 905 CW
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
SOLDERING FOOTPRINT* 6.20 0.244
2.58 0.102
5.80 0.228
3.00 0.118
1.60 0.063
INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−−
6.17 0.243
SCALE 3:1
mm Ǔ ǒinches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−−
NTD5804N, NTDV5804N PACKAGE DIMENSIONS IPAK (STRAIGHT LEAD DPAK) CASE 369D−01 ISSUE C
C
B V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
E
R 4
Z
A
S
1
2
3
−T− SEATING PLANE
K
J
F D G
H
3 PL
0.13 (0.005)
M
DIM A B C D E F G H J K R S V Z
INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−−
MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−−
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
T
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NTD5804N/D
