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7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 ... V. BVCEO. IC = 1.0 mA. 28. V. BVEBO. IE = 1.0 mA. 3.5. V. ICBO. VCB = 28 V.
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MRF5174

NPN RF POWER TRANSISTOR

DESCRIPTION: The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band.

PACKAGE STYLE .280 4L STUD A 45°

FEATURES INCLUDE:

E

B

• High Gain • Gold Metallization • Emitter Ballasting

C E B C

D

J E

I

F G

MAXIMUM RATINGS

H K

0.5 A

IC

40 V

VCBO PDISS

O

8.75 W @ TC = 25 C O

O

O

O

TJ

-55 C to +200 C

TSTG

-55 C to +200 C

θJC

20 C/W

CHARACTERISTICS

DIM

MINIMUM inches / mm

inches / mm

A

1.010 / 25.65

1.055 / 26.80

B

.220 / 5.59

.230 /5.84

C

.270 / 6.86

.285 / 7.24

D

.003 / 0.08

.007 / 0.18

E

.117 / 2.97

MAXIMUM

.137 / 3.48 .572 / 14.53

F

.130 / 3.30

G .245 / 6.22

H

.255 / 6.48 .640 / 16.26

I

O

#8-32 UNC

J

.175 / 4.45

.217 / 5.51

K

.275 / 6.99

.285 / 7.24

O

TC = 25 C

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 1.0 mA

40

V

BVCEO

IC = 1.0 mA

28

V

BVEBO

IE = 1.0 mA

3.5

V

ICBO

VCB = 28 V

hFE

VCE = 5.0 V

COB

VCB = 28 V

PG ηC

VCE = 28 V

IC = 100 mA

20 f = 1.0 MHz

POUT = 2.0 W

f = 400 MHz

12 50

13

A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.

500

µA

120

---

5.0

pF dB %

REV. A

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