BC337/BC338 NPN General Purpose Transistor

COLLECTOR

P b Lead(Pb)-Free

1

TO-92

2

BASE 1 3

2

EMITTER

3

Maximum Ratings(TA=25°C unless otherwise noted) Symbol

BC337

BC338

Unit

Collector-Base voltage

VCBO

50

30

V

Collector-Emitter voltage

VCEO

45

25

V

Emitter-Base voltage

VEBO

5.0

5.0

V

Rating

Collector Current Continuous

lC

800

mA

Total Device Dissipation Alumina Substrate,TA=25°C

PD

625

mW/°C

Operating Junction Temperature Range

TJ

-55 to +150

°C

Tstg

-55 to +150

°C

Storage Junction Temperature Range

ELECTRICAL CHARACTERISTICS Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100µA, I E=0 Collector-Emitter Breakdown Voltage IC=10mA, I B=0 Emitter-Base Breakdown Voltage IC=10µA, IC=0

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BC337 BC338

V(BR)CBO

50 30

-

-

BC337 BC338

V(BR)CEO

45 25

-

-

BC337 BC338

V(BR)EBO

5.0

-

-

1/3

V

V Vdc

30-Jun-06

BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) (Countinued) Min Typ Characteristics Symbol

Max

Unit

lCEO

0.2

µA

lCBO

0.1

µA

lEBO

0.1

µA

OFF CHARACTERISTICS Collector Cut-off Current VCE=40V, l B=0 VCE=20V, l B=0

BC337 BC338

Collector Cut-off Current VCB=45V, l E=0 VCB=25V, l E=0

BC337 BC338

Emitter Cutoff Current VEB=4.0V, l C=0

ON CHARACTERISTICS DC Current Gain VCE=1V, l C=100mA VCE=1V, l C=300mA

hFE1

100

hFE2

60

Collector-Emitter Saturation Voltage lC=500mA, l B=50mA

VCE(sat)

-

-

0.7

V

Base-Emitter Saturation Voltage lC=500mA, l B=50mA

VBE(sat)

-

-

1.2

V

fT

210

-

-

MHz

Transition frequency VCE=5V, l C=10mA, f=100MHz

-

630

-

-

hFE Classification

Classification

16

25

40

hFE1

100 ~ 250

160 ~ 400

250 ~ 630

hFE2

60-

100-

170-

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BC327/BC328 Typical Characteristics -20

IC mA , COLLECTOR CURRENT

IC mA , COLLECTOR CURRENT

-500 mA - 5.0 A I B = - 4.5m = mA IB - 4.0 A I B = - 3.5m A m = IB - 3.0 A I B = - 2.5m mA IB = - 2.0 = IB

-400 -300

IB =

-200

mA - 1.5 PT = 60 0m

IB = - 1.0mA

W

IB = - 0.5mA

-100

IB=

-16

IB=

-12

-1

-2

-3

-4

µA 30µA

0µA IB = - 2

-4

IB = - 10µA

-5

-10

V CE = - 2.0V

100 - 1.0V

10

-1

-10

-100

-1000

IC(mA), COLLECTOR CURRENT

fT[MHz], GAIN-BANDWIDTH PRODUCT

VCE = -1V PULSE

-10

-1

-0.5

-0.6

-0.7

-0.8

-0.9

VBE[V], BASE-EMITTER VOLTAGE

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-10

IC = 10 IB PULSE V CE(sat)

-1

-0.1 V BE(sat)

-0.01 -0.1

-1

-10

-100

-1000

1000

VCE = -5.0V

100

10 -1

-10

-100

IC[mA], COLLECTOR CURRENT

Fig.6 Gain Bandwidth Product

Fig.5 Base-Emitter On Voltage

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-50

Fig.4 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

-1000

-0.1 -0.4

-40

IC(mA), COLLECTOR CURRENT

Figure 3. DC current Gain

-100

-30

Fig.2 Static Characteristic

PULSE

-0.1

IB = 0

-20

VCE(V), COLLECTOR-EMITTER VOLTAGE

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

=6 00 mW

- 40

IB = -

-8

Figure 1. Static Characteristic

hFE, DC CURRENT GAIN

T

µA - 50 IB=

VCE(V), COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

P

IB = 0

-0

1

µA - 80 µA - 70 IB= µA - 60 IB=

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29-Jun-06

BC337/BC338 TO-92 Outline Dimensions

unit:mm

E

H

Dim A B C D E G H J K L

L

C

J K

Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50

D

A

B

G

TO-92

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