GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0200 Rev.2.00 Jul. 14, 2005
Features • Including Clamping Zener VCL = 400 V(typ) • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK
Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4
4
1 1
2
2
C
1. Gate 2. Collector 3. Emitter 4. Collector
G 3
3 E
Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to Emitter voltage Emitter to Collector voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at Tc = 25°C
Rev.2.00
Jul. 14, 2005,
page 1 of 7
Symbol
Ratings
Unit
VCES VGES VECS IC iC(peak) PCNote1 Tj
370 ±20 24 14 18 60 150
V V V A A W °C
Tstg
–55 to +150
°C
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Electrical Characteristics (Ta = 25°C) Item
Symbol
Collector to Emitter breakdown voltage Gate to Emitter breakdown voltage Collector cutoff current Gate cutoff current
V(BR)CES
Min 370
Typ 400
Max 430
Unit V
Test Conditions Ic = 2 mA, VGE = 0 V
— — — 1.4
— 100 ±100 1.7
V µA µA V
IG = ±100 µA, VCE = 0 V VCE = 300 V, VGE = 0 V VGE = ±20 V, VCE = 0 V IC = 8 A, VGE = 10 V
Collector to emitter saturation voltage
VCE(sat)1
±20 — — —
Collector to emitter saturation voltage Gate to emitter cutoff voltage Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reveres transfer capacitance
VCE(sat)2
—
1.6
2.2
V
IC = 8 A, VGE = 4 V
VGE(off) td(on) tr td (off) tf Ciss Coss Cres
1.3 — — — — — — —
— 0.2 0.4 1.0 5 1110 75 18
2.2 — — — — — — —
V µs µs µs µs pF pF pF
IC = 1 mA, VCE = 10 V
Secondary breakdown energy
Es/b
230
—
—
mJ
L = 5 mH
Rev.2.00
Jul. 14, 2005,
V(BR)GES ICES IGES
page 2 of 7
VCE = 300 V, RL = 50 Ω, VGE = 5 V, RG = 200 Ω
VCE = 10 V, VGE = 0, f = 1 MHz
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Main Characteristics Maximum Safe Operation Area
Power vs. Temperature Derating
IC (A)
100
60
Collector Current
Collector Dissipation
Pc (W)
80
40
20
10
DC
PW
Op
er
=
10
on
m
s
1s
(T
c=
1
1m
s(
ati
10 µs 10 0 µs
ho
t)
25
°C )
0.1
Ta = 25°C 0.01
0 0
50
100
150
Case Temperature
200
1
Tc (°C)
IC (A)
450
Collector Current
Collector to Emitter Breakdown Voltage V(BR)CES (V)
10
400
350 IC = 2 mA 50
100
Pulse Test
4V
6
4
2
VGE = 2 V 0
16
12
8 25°C
Tc = 125°C
-40°C 0 2
3
Gate to Emitter Voltage
page 3 of 7
4
5
VGE (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
(A)
6V
2
4
6
8
10
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage
IC Collector Current
1000
Collector to Emitter Voltage VCE (V)
VCE = 10 V Pulse Test
Jul. 14, 2005,
300
8
Tc (°C)
20
Rev.2.00
10 V 15 V
150
Typical Transfer Characteristics
1
100
0
0
Case Temperature
0
30
Typical Output Characteristics
500
4
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Breakdown Voltage vs. Case Temperature
300 -50
3
5 Pulse Test 4
3 IC = 10 A
2
1 0
8A
0
4
8
6A
12
Gate to Emitter Voltage
16
20
VGE (V)
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Typical Capacitance vs. Collector to Emitter Voltage
10
10000
5
3000
Capacitance C (pF)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage vs. Collector Current
-40°C
2
25°C 1 Tc = 125°C
0.5
0.2
VGE = 10 V Pulse Test
0.1 0.1
Cies 1000 300 100
Coes
30 Cres 10 VGE = 0 f = 1 MHz
3 1
1
0.3
3
10
Collector Current
IC
30
100
0
(A)
12
30
8
20
10
4 VCE 0
20
40
60
Gate Charge
80
0 100
ISC (A) Secondary breakdown Current
100 50 25°C
10 Tc = 140°C
2 VCC = 16 V 1 0.1
VGE = 10 V, Rg = 200 Ω
0.2
0.5
1
2
5
Inductance Ratio L (mH)
Rev.2.00
Jul. 14, 2005,
td(off)
0.3
tr
0.1 td(on) 0.03
page 4 of 7
VCC = 300 V, VGE = 10 V Rg = 200 Ω, Ta = 25°C 0.2
0.5
1
2
Collector Current
Secondary Breakdown Current vs. Inductance Ratio
5
tf
1
Qg (nc)
20
50
3
0.01 0.1
10
Secondary breakdown energy Es/b (mJ)
0
40
10
Switching Time t (µs)
16
VGE (V)
VGE
VCE = 16 V
Gate to Emitter Voltage
VCE (V) Collector to Emitter Voltage
40
30
Switching Characteristics 20
IC = 10 A Ta = 25°C
20
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics 50
10
5
10
IC (A)
Secondary Breakdown Energy vs. Case Temperature 1000 500 200 100 50 20 10 25
VCC = 16 V, L = 5 mH VGE = 10 V, Rg = 200 Ω
50
75
100
Case Temperature Tc (°C)
125
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
3 Tc = 25°C 1
0.3
D=1 0.5 0.2
0.1
0.1 0.05
0.03 0.02
0.01
0.05
t ho
θch - c(t) = θs (t) • θch - c θch - c = 2.08°C/W, Tc = 25°C
lse
pu
1s
PDM
D=
0.03
PW T
PW T
0.01 10 µ
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit
Waveform
Ic Monitor
90%
R Vin
Vin Monitor
10% 90%
Rg
D.U.T.
V CC Ic
Vin = 10 V
td(on)
Jul. 14, 2005,
page 5 of 7
10%
10% tr ton
Rev.2.00
90%
td(off)
tf toff
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Package Dimensions JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
1.40g
8.6 ± 0.3
1.3 ± 0.15
1.3 ± 0.2 1.37 ± 0.2
0.76 ± 0.1 2.54 ± 0.5
2.54 ± 0.5
RENESAS Code
Package Name
PRSS0004AE-B
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
Unit: mm
1.30g
(1.4)
4.44 ± 0.2
10.0
Rev.2.00
Jul. 14, 2005,
2.54 ± 0.5
page 6 of 7
0.4 ± 0.1 0.3 3.0 +– 0.5
2.54 ± 0.5
0.2 0.86 +– 0.1
7.8 7.0
+ 0.3 – 0.5
2.49 ± 0.2 0.2 0.1 +– 0.1
1.37 ± 0.2 1.3 ± 0.2
7.8 6.6
1.3 ± 0.15
(1.5)
(1.5)
8.6 ± 0.3
10.2 ± 0.3
1.7
SC-83
2.49 ± 0.2
11.0 ± 0.5
11.3 ± 0.5 0.3 10.0 +– 0.5
(1.4)
4.44 ± 0.2 10.2 ± 0.3
0.2 0.86 +– 0.1
JEITA Package Code
Unit: mm
2.2
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Ordering Information Part Name GN4014ZB4LD GN4014ZB4LS GN4014ZB4LM
Quantity 50 pcs. 1000 pcs. 1000 pcs.
Shipping Container Sack Taping Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00
Jul. 14, 2005,
page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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