2SD1266, 2SD1266A - Matthieu Benoit

the rank classification. 10.0±0.2. 5.5±0.2. 7.5. ±0.2. 16.7. ±0.3. 0.7. ±0.1. 14.0. ±0.5. Solder Dip. (4.0). 0.5+0.2. –0.1. 1.4±0.1. 1.3±0.2. 0.8±0.1. 2.54±0.3. 5.08±0.5.
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Power Transistors

2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 (2SB941) and 2SB941A (2SB941A)

Parameter

Symbol

Rating

Unit

VCBO

60

V

Collector to base voltage

2SD1266

Collector to emitter voltage

2SD1266

VCEO

60

2SD1266A

2SD1266A 

16.7±0.3 14.0±0.5

■ Absolute Maximum Ratings Ta = 25°C

4.2±0.2

5.5±0.2

2.7±0.2

φ 3.1±0.1

2.54±0.3 5.08±0.5

V

  

80

VEBO

6

V

Peak collector current

ICP

5

A

Collector current

IC

3

A

PC

35

W

1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package

1 2 3

TC = 25°C Ta = 25°C

0.5+0.2 –0.1

0.8±0.1

80

Emitter to base voltage

Collector power dissipation

1.3±0.2

1.4±0.1

Solder Dip (4.0)

• High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw

10.0±0.2

7.5±0.2

■ Features

4.2±0.2

0.7±0.1

Unit: mm

2

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

■ Electrical Characteristics Ta = 25°C Parameter

Symbol

Collector cutoff current

2SD1266

Collector cutoff current

2SD1266

Max

Unit

ICES

VCE = 60 V, VBE = 0

200

µA

VCE = 80 V, VBE = 0

200

ICEO

VCE = 30 V, IB = 0

300

VCE = 60 V, IB = 0

300

2SD1266A

2SD1266A

Emitter cutoff current Collector to emitter voltage

2SD1266

Conditions

IEBO

VEB = 6 V, IC = 0

VCEO

IC = 30 mA, IB = 0

2SD1266A

Forward current transfer ratio

Base to emitter voltage Collector to emitter saturation voltage

Min

Typ

1 60

µA

mA V

80 hFE1*

VCE = 4 V, IC = 1 A

70

hFE2

VCE = 4 V, IC = 3 A

10

VBE

VCE = 4 V, IC = 3 A

VCE(sat)

250

1.8

IC = 3 A, IB = 0.375 A

1.2

V V

Transition frequency

fT

VCE = 10 V, IC = 0.5 A, f = 10 MHz

30

MHz

Turn-on time

ton

IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A,

0.5

µs

Storage time

tstg

VCC = 50 V

2.5

µs

Fall time

tf

0.4

µs

*h FE1

Rank classification

Rank

Q

P

hFE1

70 to 150

120 to 250

Publication date: May 2002

Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. Note) The part number in the parenthesis shows conventional part number. SJD00283AED

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