very low power dual cmos operational amplifier - Agentcobra

-0.3 to 18. V. IO. Output Current for VCC. + ≥ 15V. ±30. mA. Iin. Input Current ..... 2.54. 0.100 e3. 7.62. 0.300 e4. 7.62. 0.300. F. 6.6. 0260 i. 5.08. 0.200. L. 3.18.
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TS27L2C,I,M VERY LOW POWER DUAL CMOS OPERATIONAL AMPLIFIERS

.. .. .. ..

EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS SYMETRICAL OUTPUT CURRENTS LOW OUTPUT DYNAMIC IMPEDANCE THE TRANSFER FUNCTION IS LINEAR PIN TO PIN COMPATIBLE WITH STANDARD DUAL OP-AMPs (TL082 -LM358) STABLE AND LOW OFFSET VOLTAGE THREE INPUT OFFSET VOLTAGE SELECTIONS

N DIP8 (Plastic Package)

D SO8 (Plastic Micropackage)

ORDER CODES

o

o

N

D

0 C, +70 C





TS27L2I/AI/BI

-40oC, +125oC





TS27L2M/AM/BM

-55 C, +125 C





TS27L2C/AC/BC

o

o

Example : TS27L2ACN

Three power consumptions are available allowing to have always the best consumption-speed ratio :  ICC= 10µA/amp. : TS27L2 (very low power)  ICC= 150µA/amp. : TS27M2 (low power)  ICC= 1mA/amp. : TS272 (high speed) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2). October 1995

PIN CONNECTIONS (top view)

1

8

2

-

3

+

4

7 -

6

+

5

1 - Output 1 2 - Inverting Input 1 3 - Non-inverting Input 1 4 - V CC 5 - Non-inverting Input 2 6 - Inverting Input 2 7 - Output 2 8 - V CC +

27L2-01.EPS

DESCRIPTION The TS272 series are low cost, low power dual operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the SGS-THOMSON silicon gate LIN MOS process giving them an excellent consumptionspeed ratio. These series are ideally suited for low consumption applications.

27L2-01.TBL

Package

Temperature Range

Part Number

1/8

TS27L2C,I,M BLOCK DIAGRAM

VCC

Current source

xI

Input differential

Second stage

Output stage

Output

27L2-02.EPS

VCC E

E

MAXIMUM RATINGS Value

Unit

Supply Voltage - (note 1)

18

V

Vid

Differential Input Voltage - (note 2)

±18

V

VCC+

Parameter

Vi

Input Voltage - (note 3)

-0.3 to 18

V

IO

Output Current for VCC+ ≥ 15V

±30

mA

Iin

Input Current

±5

mA

Toper

o

Operating Free-Air Temperature Range

C

TS27L2C/AC/BC TS27L2I/AI/BI TS27L2M/AM/BM Tstg

Storage Temperature Range

0 to +70 -40 to +125 -55 to +125 -65 to +150

o

C

27L2-02.TBL

Symbol

Notes : 1. All voltage values, except differential voltage, are with respect to network ground terminal. 2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.

Symbol

Parameter

VCC+

Supply Voltage

Vicm

Common Mode Input Voltage Range

* Selected devices only.

2/8

Value

Unit

3 * to 16

V

0 to VCC+ - 1.5

V

27L2-03.TBL

OPERATING CONDITIONS

27L2-03.EPS

T 20

T 19

T 17

T 24

T21

T 18

R2

T 25

VCC

T 22

T 23

T 26

T 29

T 28

T 27

Input

T3

T1

T5

VCC

T4

T2

C1

Input R1

T7

T6

T9

T8

T 13

T11

T 10

T 14

T 12

T16

Output

T 15

TS27L2C,I,M

SCHEMATIC DIAGRAM (for 1/2 TS27L2)

3/8

TS27L2C,I,M ELECTRICAL CHARACTERISTICS VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified) Parameter

TS27L2C/AC/BC Min.

Vio

DV io Iio

Iib

VOH

VOL Avd

GBP

CMR SVR ICC

Io Isink SR

Input Offset Voltage VO = 1.4V, Vic = 0V TS27L2C/I/M TS27L2AC/AI/AM TS27L2BC/BI/BM Tmin. ≤ Tamb ≤ Tmax. TS27L2C/I/M TS27L2AC/AI/AM TS27L2BC/BI/BM

Typ.

Max.

1.1 0.9 0.25

10 5 2 12 6.5 3

Min.

Typ.

Max.

1.1 0.9 0.25

10 5 2 12 6.5 3.5

Input Offset Voltage Drift

0.7

0.7

Input Offset Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax.

1

1

Input Bias Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax.

1

High Level Output Voltage Vid = 100mV, RL = 1MΩ Tmin. ≤ Tamb ≤ Tmax.

100

200 pA 1

150

300 V

8.8 8.7

9

8.8 8.6

9 mV

50

50 V/mV

60 45

100

60 40

100 MHz

Gain Bandwidth Product Av = 40dB, RL = 1MΩ, CL = 100pF fin = 10kHz

0.1

0.1

Common Mode Rejection Ratio Vo = 1.4V, Vic = 1V to 7.4V

65

80

65

80

Supply Voltage Rejection Ratio + VCC = 5V to 10V ,Vo = 1.4V

60

80

60

80

dB dB

Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin. ≤ Tamb ≤ Tmax.

10

Output Short Circuit Current Vid = 100mV, Vo = 0V

60

60

Output Sink Current Vid = -100mV, Vo = VCC

45

45

0.04

0.04

Slew-Rate at Unity Gain R L = 1MΩ, CL= 100pF, Vi = 3 to 7V

o

µV/ C pA

Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain Vo = 1V to 6V, R L = 1MΩ, Vic = 5V Tmin. ≤ Tamb ≤ Tmax.

Unit mV

15 17

10

15 18

µA

mA mA V/µs

∅m

Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ, CL= 100pF

45

45

Kov

Overshoot Factor

30

30

%

en

Equivalent Input Noise Voltage f = 1kHz, RS = 100Ω

68

68

nV  √ Hz

Channel Separation

120

120

dB

VO1/VO2

Degrees

Note : 1. Maximum values including unavoidable inaccuracies of the industrial test.

4/8

TS27L2I/AI/BI TS27L2M/AM/BM

27L2-04.TBL

Symbol

TS27L2C,I,M TYPICAL CHARACTERISTICS

20 Tamb = 25°C AV = 1 VO = VCC / 2

10

5

4 8 12 SUPPLY VOLTAGE, VCC (V)

16

VCC = 5V

VCC = 3V 1

-10

-8 -6 -4 -2 OUTPUT CURRENT, I OH (mA)

0

V CC = 3V V CC = 5V

0.6 0.4

0

Tamb = 25°C V ic = 0.5V V id = -100mV 1 2 OUTPUT CURRENT, I OL (mA)

100

125

20 16

Tamb = 25°C V id = 100mV VCC = 16V

12 VCC = 10V

8 4 0 -50

OUTPUT VOLTAGE,V OL (V)

1.0

0.2

75

-40 -30 -20 -10 OUTPUT CURRENT, I OH (mA)

0

Figure 4b : Low Level Output Voltage versus Low Level Output Current

3

27L2-08.EPS

OUTPUT VOLTAGE,V OL (V)

Figure 4a : Low Level Output Voltage versus Low Level Output Current

0.8

50

TEMPERATURE, T amb (°C)

OUTPUT VOLTAGE, V OH (V)

T amb = 25°C V id = 100mV

2

0

25

Figure 3b : High Level Output Voltage versus High Level Output Current

5

3

1

27L2-06.EPS

OUTPUT VOLTAGE, V OH (V)

Figure 3a : High Level Output Voltage versus High Level Output Current

4

10

27L2-07.EPS

0

VCC = 10V Vic = 5V

3 V CC = 10V VCC = 16V 2

1

0

T amb = 25°C V i = 0.5V Vid = -100mV 4 8 12 16 OUTPUT CURRENT, I OL (mA)

20

27L2-09.EPS

15

100

27L2-05.EPS

INPUT BIASCURRENT, I IB (pA)

Figure 2 : Input Bias Current versus Free Air Temperature

27L2-04.EPS

SUPPLY CURRENT,I CC (mA)

Figure 1 : Supply Current (each amplifier) versus Supply Voltage

5/8

TS27L2C,I,M TYPICAL CHARACTERISTICS (continued) Figure 6 : Gain Bandwidth Product versus Supply Voltage

10 0

Tamb = 25°C VCC+ = 10V R L = 1MΩ C L = 100pF A VCL = 100

-10 2 10

Phase Margin

90 135

Gain Bandwidth Product

3

180

4

5

10 10 10 FREQUENCY, f (Hz)

10

6

PHASE MARGIN, f m (Degrees)

60 Tamb = 25°C R L = 1MΩ C L = 100pF AV = 1

50

40

30 0

4 8 12 SUPPLY VOLTAGE, V CC (V)

16

SLEW RATES, SR (V/ µs)

Tamb = 25°C R L = 1MΩ C L = 100pF

0.04

SR

SR 0.03

0.02

0

4 8 12 SUPPLY VOLTAGE, V CC (V)

16

80 Tamb = 25°C R L = 1MΩ AV = 1

70

VCC = 10V

60

50

40

0

20 40 60 80 CAPACITANCE, C L (pF)

100

300

VCC = 10V Tamb = 25°C R S = 100Ω

200

100

6 8 10 12 14 SUPPLY VOLTAGE, V CC (V)

16

27L2-14.EPS

0

4

6/8

40

Figure 10 : Input Voltage Noise versus Frequency EQUIVALENTINPUT NOISE VOLTAGE (nV/VHz)

Figure 9 : Slew Rates versus Supply Voltage 0.05

60

Figure 8 : Phase Margin versus Capacitive Load

27L2-12.EPS

PHASE MARGIN, φ m (Degrees)

Figure 7 : Phase Margin versus Supply Voltage

80

27L2-13.EPS

20

45

PHASE

Tamb = 25°C R L = 1MΩ 100 C L = 100pF AV = 1

1

100 10 FREQUENCY (Hz)

1000

27L2-15.EPS

30

PHASE(Degrees)

GAIN

27L2-10.EPS

GAIN (dB)

40

0

120

27L2-11.EPS

50

GAIN BANDW. PROD., GBP (kHz)

Figure 5 : Open Loop Frequency Response and Phase Shift

TS27L2C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP

B

I L

a1

A

e4

b1

B1

b

E

e e3

Z

Z D

5

1

4

A a1 B b b1 D E e e3 e4 F i L Z

Min.

Millimeters Typ. 3.32

0.51 1.15 0.356 0.204

Max.

1.65 0.55 0.304 10.92 9.75

7.95

Min. 0.020 0.045 0.014 0.008

Max.

0.065 0.022 0.012 0.430 0.384

0.313

2.54 7.62 7.62

3.18

Inches Typ. 0.131

0.100 0.300 0.300 6.6 5.08 3.81 1.52

0.125

0260 0.200 0.150 0.060

DIP8.TBL

Dimensions

PM-DIP8.EPS

F

8

7/8

TS27L2C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO)

s

e3

b1

e

a1

b

A

a2

C

c1

a3

L

E

D M

5

1

4

A a1 a2 a3 b b1 C c1 D E e e3 F L M S

Min.

Millimeters Typ.

0.1 0.65 0.35 0.19 0.25

Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5

Min.

Inches Typ.

0.026 0.014 0.007 0.010

Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020

0.189 0.228

0.197 0.244

0.004

o

45 (typ.) 4.8 5.8

5.0 6.2 1.27 3.81

3.8 0.4

0.050 0.150 4.0 1.27 0.6

0.150 0.016

0.157 0.050 0.024

o

8 (max.)

SO8.TBL

Dimensions

PM-SO8.EPS

F

8

 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

8/8

ORDER CODE :

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.