High Resolution Raman Temperature Measurements - eufanet
Line Center vs. Temp. Silicon - Line Crossing. 516.5. 517. 517.5. 518. 518.5. 519. 20. 30. 40. 50. 60 ... Kuball, University of Bristol, UK, IEEE Electron Dev. Lett.
High Resolution Raman Temperature Measurements Presented by R. Aaron Falk, Ph.D.
Introduction z What
is Raman Temperature Probe? z What is Raman Temperature Probe value to IC fabrication? z QFI Raman Temperature Probe capability
Raman Spectroscopy z
Raleigh Scattering Most photons scatter elastically from atoms – no energy change
z
Raman Scattering Less than 1 in a million photons scatter inelastically – gaining or losing energy from vibration states
Typical Raman Spectrum Raman Scatter in Silicon 70000
Intensity (AU)
60000 50000 40000 30000 20000 10000 0 530
535
540 Wavelength (nm)
545
550
Raman Properties shift or wavenumbers (cm-1) ν = 1/λ inc – 1/λscat , produces unique material signature
z Energy
z Energy
shift varies slightly dependent on several parameters – Stress – Material stoichiometry – Temperature
Typical Raman Spectrum Raman Scatter in Silicon 70000
Intensity (AU)
60000 50000 40000 30000 20000 10000 0 -100
0
100
200
300
400
Raman Shift (cm-1)
500
600
700
Temperature Dependence 2500
z
Crystalline semiconductors typically have one strong Raman line at a shift of 300 – 1000 cm-1
z
Line center shifts of 0.01 to 0.03 cm-1 per degree centigrade occur
z
Line width and intensity also shift with temperature – but are typically not as reliable/accurate of an indicator.
145 C
2000
Intensity (A U )
22 C
1500
1000
500
0 500
510
520
530 Ramon Shift (cm-1)
Raman line in Silicon
540
550
560
Line Center vs. Temp Silicon - Line Crossing
Line Center (cm-1)
519 518.5 518 517.5 517 516.5 20
30
40
50
60
Temperature (C)
70
80
90
Resolution is important 180 160 o
Temperature ( C)
Prof. Kuball, University of Bristol, UK, IEEE Trans. Electron Dev. 53, 2438 (2006).
50μm
S
D
source
gate
drain
Raman 3D sim. IR
140
G
120
measured through substrate
100 80
Prof. Kuball, University of Bristol, UK, IEEE Electron Dev. Lett. 23, 7 (2002); IEEE Trans. Electron Dev. 53, 2438 (2006).
60 45
40
35
30
Position (μm)
25
20
Development History z
2000-Present – Developed and proven at University of Bristol by Dr. Martin Kuball
z
2005 – QFI worked Dr. Kuball to integrate temperature mapping sensor into Raman system
z
2006 – Exclusive licensing agreement with UB, followed by commercialization program
z
2007 – Commercial product demonstrated
Raman Temperature Probe Layout Scan Mirror
High-Resolution Spectrometer
Color Beam Splitter
Imaging Detector
PBS
532 nm Laser
Test Circuit
DAQ Electronics
Raman Specs Detector
High resolution spectrometer
Stimulator
532 nm DPSS laser
Spatial Resolution Temperature Resolution
~ 0.5 um @ 0.55 NA ~ 0.1 um @ 2.3 NA ~ 1 0C (silicon, 10 sec ave.)
Temperature Range
No limits
Data Acquisition Modes
Single Point, Line Scan, Area
Material Calibration
Built in
Imaging Source
Laser Scanning Microscope
LabWalker System
Raman Components
Software Interface
Importance for “Non-Power” Devices
Silicon Tool Development z 532
nm works well for top-side silicon and wide bandgap semiconductors (GaN, SiC) power devices
z 1340
nm unit under development for silicon backside measurements – Signal scaling – InGaAs spectrometer – Air – Solid interface
Conclusions z Raman
Micro-Probe represents a breakthrough in micro-thermal measurements – High spatial resolution, < 500 nm – Temperature resolution, ~ 1 0C – Critical to extracting true peak temperature with
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