October 2001
FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description
Features
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
11 A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V, RDS(ON) = 0.017 Ω @ VGS = 4.5 V.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM-6
SOT-23
D D D
SO-8
SuperSOTTM-8
D
S F D 0A 9 66
pin 1
S
Absolute Maximum Ratings
S
S
Low gate charge.
High power and current handling capability.
SO-8
SOT-223
SOIC-16
5
4
6
3
7
2
8
1
G
TA = 25oC unless other wise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
PD
Power Dissipation for Single Operation
Ratings
Units
30
V
±20
V
(Note 1a)
11
A
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
1
- Pulsed
TJ,TSTG
Fast switching speed.
50
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
© 2001 Fairchild Semiconductor Corporation
FDS6690A Rev.D
Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
30
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
o
V mV / oC
20
TJ = 55°C
1
µA
10
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 oC
1
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, I D = 11 A
1.5
2
V mV /oC
-4
TJ =125°C VGS = 4.5 V, I D = 10 A
0.01
0.0125
0.015
0.022
0.013
0.017
50
Ω
ID(ON)
On-State Drain Current
VGS = 10 V, VDS = 5 V
A
gFS
Forward Transconductance
VDS = 15 V, I D= 11 A
45
S
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
1600
pF
350
pF
140
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
tD(on)
Turn - On Delay Time
VDS= 15 V, I D= 1 A
10
18
ns
VGS = 10 V , RGEN = 6 Ω
12
22
ns
35
56
ns
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
10
18
ns
Qg
Total Gate Charge
VDS = 15 V, I D = 11A,
17
23
nC
Qgs
Gate-Source Charge
VGS= 5 V
5
nC
Qgd
Gate-Drain Charge
6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
(Note 2)
0.73
2.1
A
1.2
V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 50OC/W on a 1 in2 pad of 2oz copper.
b. 105OC/W on a 0.04 in2 pad of 2oz copper.
c. 125OC/W on a 0.006 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6690A Rev.D
Typical Electrical Characteristics
VGS =10V
R DS(ON) , NORMALIZED
40
3
4.0V 3.5V
6.0V 4.5V
30
3.0V 20
10
2.5V 0
0
0.5
1 V
DS
1.5
2
2.5
3.5 V 4.0 V
1.5
4.5 V 5.5 V 7.0 V 10V
1 0
10
30
40
50
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05
I D = 11A VGS = 10V
1.2
1
0.8
-25
0
25
50
75
100
125
I D = 5.5A 0.04
0.03
0.02
TA = 125°C
0.01
TA = 25°C 0
150
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation Temperature.
with
Figure 4. On Resistance Variation with Gate-to-Source Voltage.
40
VDS =5.0V
TJ = -55°C
30
I S , REVERSE DRAIN CURRENT (A)
40
ID , DRAIN CURRENT (A)
20
ID , DRAIN CURRENT (A)
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V 2
3
1.6
0.6 -50
2.5
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
50
25°C 125°C
20
10
VGS = 0V 10
TJ = 125°C 1
25°C 0.1
-55°C
0.01
0.001
0 1
2
3
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6690A Rev.D
Typical Electrical And Thermal Characteristics 4000
VDS = 5V
I D = 11.0A
15V
10V
8
2000 CAPACITANCE (pF)
V GS , GATE-SOURCE VOLTAGE (V)
10
6
4
2
C iss
1000 500
Coss 200
50 0.1
0 0
6
12
18
24
30
0.2
0.5
2
5
10
30
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
50
100
10 5
R
(O DS
N)
LI
100 us 1m s 10m s
T MI
100 ms
2 1 0.5
1s 10s DC
VGS =10V SINGLE PULSE RθJA = 125°C/W A TA = 25°C
0.1 0.05 0.01 0.05
0.1
SINGLE PULSE RθJA =125°C/W TA = 25°C
40 POWER (W)
30
30
20
10
0.5
1
2
5
10
30
0 0.001
50
0.01
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
VDS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
I D , DRAIN CURRENT (A)
Crss
f = 1 MHz VGS = 0 V
100
Figure 10. Single Pulse Maximum Power Dissipation.
1 0.5 0.2 0.1 0.05 0.02 0.01
D = 0.5 0.2
R θJA (t) = r(t) * R θJA R θJA = 125°C/W
0.1 0.05 0.02
P(pk)
0.01
t1 Single Pulse
0.005 0.002 0.001 0.0001
t2
TJ - TA = P * R θJA(t) Duty Cycle, D = t1 /t2 0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6690A Rev.D
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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