BUZ 271
SIPMOS ® Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1
Pin 2
G
Pin 3
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 271
-50 V
-22 A
0.15 Ω
TO-220 AB
C67078-S1453-A2
Maximum Ratings Parameter
Symbol
Continuous drain current
ID
TC = 26 °C
Values
Unit A
-22
IDpuls
Pulsed drain current
TC = 25 °C
-88
EAS
Avalanche energy, single pulse
mJ
ID = -22 A, VDD = -25 V, RGS = 25 Ω L = 413 µH, Tj = 25 °C
200
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 °C
± 20
V W
125
Operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤1
Thermal resistance, chip to ambient
RthJA
≤ 75
DIN humidity category, DIN 40 040
K/W
E
IEC climatic category, DIN IEC 68-1
Semiconductor Group
°C
55 / 150 / 56
1
07/96
BUZ 271
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter
Symbol
Values min.
typ.
Unit max.
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage
-50
-
-
-2.1
-3
-4
VGS(th)
VGS=VDS, ID = 1 mA Zero gate voltage drain current
V
IDSS
µA
VDS = -50 V, VGS = 0 V, Tj = 25 °C
-
-0.1
-1
VDS = -50 V, VGS = 0 V, Tj = 125 °C
-
-10
-100
Gate-source leakage current
IGSS
VGS = -20 V, VDS = 0 V Drain-Source on-resistance
-
-10
-100 Ω
RDS(on)
VGS = -10 V, ID = -14 A
Semiconductor Group
nA
-
2
0.12
0.15
07/96
BUZ 271
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter
Symbol
Values min.
typ.
Unit max.
Dynamic Characteristics Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = -14 A Input capacitance
1.5
pF -
2000
2700
-
650
975
-
250
375
Crss
VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time
-
Coss
VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance
4
Ciss
VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance
S
td(on)
ns
VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Ω Rise time
-
30
45
-
120
180
-
130
175
-
140
190
tr
VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Ω Turn-off delay time
td(off)
VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Ω Fall time
tf
VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 271
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter
Symbol
Values min.
typ.
Unit max.
Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed
-
-
-88 V
-1.25
-1.7
trr
ns -
90
-
Qrr
VR = -30 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
-22
-
VR = -30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge
-
VSD
VGS = 0 V, IF = -44 A Reverse recovery time
-
ISM
TC = 25 °C Inverse diode forward voltage
A
µC -
4
0.23
-
07/96
BUZ 271
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ -10 V
130
-24
W
A
110
Ptot
-20
ID
100 90
-18 -16
80 -14 70 -12 60 -10
50
-8
40
-6
30 20
-4
10
-2
0 0
0 20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
TC
°C
160
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1
-10 3
K/W A
ID
ZthJC
10 0
t = 35.0µs p
-10 2
100 µs
/ID = -10
VD
10 -1
1 ms
S
D = 0.50 0.20
) on S( RD
1
0.10 10 ms
0.05
10 -2
0.02 0.01 DC single pulse -10
0
-10
0
-10
1
V -10
10
2
10
VDS
Semiconductor Group
-3 -7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
tp
5
07/96
0
BUZ 271
Typ. output characteristics ID = ƒ(VDS)
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
parameter: tp = 80 µs -50
0.45
Ptot = 125W l
A
a b c
d
e
f
g
h
i
Ω VGS [V]
ID
-40 -35 -30 -25 k
-20
a
-4.0
b
-4.5
c
-5.0
d
-5.5
e
-6.0
f
-6.5
g
-7.0
h
-7.5
i
-8.0
j j
-9.0
k
-10.0
l
-20.0
-15 i
RDS (on)0.35 0.30 0.25 0.20 0.15 0.10
h
-10
j
g f e
-5
0.05
d
c b a
0 0
-2
-4
-6
-8
V
0.00 0
-12
VGS [V] = a b c d e f -4.0 -5.5 -6.0 -6.5 -7.0 -7.5 -4.5 -5.0
-4
-8
g h i j -8.0 -9.0 -10.0 -20.0
-12
-16
VDS
A
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
-24
6.0
A
S
-20
ID
5.0
gfs
-18
4.5
-16
4.0
-14
3.5
-12
3.0
-10
2.5
-8
2.0
-6
1.5
-4
1.0
-2
0.5
0 0
-24
ID
0.0 -1
-2
-3
-4
-5
-6
-7
-8
V
-10
VGS
Semiconductor Group
6
0
-4
-8
-12
-16
A ID
07/96
-22
BUZ 271
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -14 A, VGS = -10 V
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
0.36
-4.6 V
Ω
98%
-4.0
RDS (on) 0.28
VGS(th)
-3.6
typ
-3.2
0.24
-2.8 0.20 0.16
98%
-2.4
typ
-2.0
2%
-1.6
0.12
-1.2 0.08 -0.8 0.04
-0.4
0.00 -60
-20
20
60
100
°C
0.0 -60
160
-20
20
60
100
Tj
°C
160
Tj
Typ. capacitances
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1
-10 2
nF
A
C
IF
Ciss 10 0
-10 1
Coss
Crss 10 -1
-10 0
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0
-5
-10
Semiconductor Group
-15
-20
-25
-30
V VDS
-40
-10 -1 0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
VSD
7
07/96
-3.0
BUZ 271
Avalanche energy EAS = ƒ(Tj ) parameter: ID = -22 A, VDD = -25 V RGS = 25 Ω, L = 413 µH
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
220
-60 V
mJ
EAS
180
V(BR)DSS-57 -56
160
-55
140
-54 120
-53
100
-52 -51
80
-50
60
-49
40
-48 -47
20 0 20
40
60
80
100
120
°C
160
Tj
Semiconductor Group
-46 -45 -60
-20
20
60
100
°C
Tj
8
07/96
160
BUZ 271
Package Outlines TO-220 AB Dimension in mm
Semiconductor Group
9
07/96
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.
