BFP 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz
F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
Package
BFP 196
SOT-143
RIs
Q62702-F1320
1=C
2=E
3=B
4=E
Maximum Ratings Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
100
Base current
IB
12
Total power dissipation
Ptot
TS ≤ 77 °C
Values
Unit V
mA mW
700
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance Junction - soldering point
1)
RthJS
≤ 105
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BFP 196
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter
Symbol
Values min.
typ.
Unit max.
DC Characteristics Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0 Collector-emitter cutoff current
12
100 nA
-
-
100
IEBO
µA -
-
1
hFE
IC = 50 mA, VCE = 8 V
Semiconductor Group
-
ICBO
VEB = 1 V, IC = 0 DC current gain
µA
-
VCB = 10 V, IE = 0 Emitter-base cutoff current
-
ICES
VCE = 20 V, VBE = 0 Collector-base cutoff current
V
50
2
100
200
Dec-13-1996
BFP 196
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter
Symbol
Values min.
typ.
Unit max.
AC Characteristics Transition frequency
fT
IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance
5
pF
-
0.97
1.4
-
0.3
-
-
3.7
-
Cce
VCE = 10 V, f = 1 MHz Emitter-base capacitance
7.5
Ccb
VCB = 10 V, f = 1 MHz Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz F
Noise figure
dB
IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz
-
1.5
-
f = 1.8 GHz
-
2.5
-
f = 900 MHz
-
16
-
f = 1.8 GHz
-
10
-
f = 900 MHz
-
12.5
-
f = 1.8 GHz
-
6.5
-
Power gain
2)
Gma
IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt
Transducer gain
|S21e|2
IC = 50 mA, VCE = 8 V, ZS =ZL= 50 Ω
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
BFP 196
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.7264 fA
BF =
125
-
NF =
0.80012
-
VAF =
20
V
IKF =
0.4294
A
ISE =
119.22
fA
NE =
1.1766
-
BR =
10.584
-
NR =
0.94288
-
VAR =
3.8128
V
IKR =
0.019511 A
ISC =
4.8666
fA
NC =
0.88299
-
RB =
1.2907
Ω
IRB =
0.084011 mA
RBM =
1
Ω
RE =
0.75103
Ω
RC =
0.27137
Ω
CJE =
13.325
fF
VJE =
0.7308
V
MJE =
0.33018
-
TF =
23.994
ps
XTF =
0.44322
-
VTF =
0.1
V
ITF =
1.9775
mA
PTF =
0
deg
CJC =
1667
fF
VJC =
0.73057
V
MJC =
0.3289
-
XCJC =
0.29998
-
TR =
2.2413
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.50922
-
TNOM
300
K
LBI =
0.84
nH
LBO =
0.65
nH
LEI =
0.31
nH
LEO =
0.14
nH
LCI =
0.07
nH
LCO =
0.42
nH
CBE =
145
fF
CCB =
19
fF
CCE =
281
fF
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG
Package Equivalent Circuit:
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-13-1996
BFP 196
Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy
800
mW
Ptot 600
500
TS
400
300
TA
200
100 0 0
20
40
60
80
100
120 °C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
10 3
K/W
RthJS
Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10 tp
0
5
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10 tp
0
Dec-13-1996
BFP 196
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC) VCE = Parameter
1.8
8.0
pF
GHz
10V
Ccb
5V
fT
1.4
3V 6.0 2V
1.2 5.0 1.0 4.0
1V
0.8 3.0
0.7V
0.6 2.0
0.4
1.0
0.2 0.0
0.0 0
4
8
12
16
V VR
22
0
20
40
60
80
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
mA IC
120
10
18
10V 5V
dB
3V
dB
G
G
10V 14
8 2V
5V 3V
7
2V
6 5
12
1V 4 10
1V
3 0.7V 2
8 1
0.7V 6
0 0
20
Semiconductor Group
40
60
80
mA IC
120
6
0
20
40
60
80
mA IC
120
Dec-13-1996
BFP 196
Power Gain Gma, Gms = f(VCE):_____ |S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
18
36
IC=50mA
dBm
dB
0.9GHz
8V 32
G
IP3
14
5V
30 0.9GHz
12
28 3V 26
10
1.8GHz 24 2V
8
22 1.8GHz
6
20 18
4
1V
16 2
14
0 0
2
4
6
8
V
12 12 0 \undefined &SYMBOPL.VCE\
20
40
60
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
32
80
100
mA 130 IC
32
IC=50mA
IC=50mA dB
dB
G
S21 24
24 20
20 16 16 12 12 8 8
4 0 0.0
4
10V 2V 1V 0.7V
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
GHz f
10V 2V 1V 0.7V
0 -4 0.0
3.5
7
0.5
1.0
1.5
2.0
2.5
GHz f
3.5
Dec-13-1996
