2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736
Features
Description
• Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz
The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.
• High Associated Gain: 9.0␣ dB Typical at 12␣ GHz • High Output Power: 17.5␣ dB Typical at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available[1]
36 micro-X Package
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of
250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
Electrical Specifications, TA = 25°C Symbol NFO
GA
P1 dB
Parameters and Test Conditions Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
G1 dB
Power Output @ 1 dB Gain Compression: VDS = 4 V, IDS = 40 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
gm
Transconductance: VDS = 2.5 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
VP
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
Units
Min.
Typ. Max.
f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz
dB dB dB dB dB dB
f =12.0 GHz
dBm
17.5
f = 12.0 GHz
dB
8.5
8.0
1.5 1.8 2.1 11.5 9.0 7.0
2.2
mmho
25
55
mA
40
50
90
V
-4.0
-1.5
-0.5
Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
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5965-8722E
ATF-13736 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4]
Absolute Maximum[1] +5 -4 -6 IDSS 225 175 -65 to +175
Units V V V mA mW °C °C
θjc = 400°C/W; TCH = 150°C 1␣ µm Spot Size[5]
Thermal Resistance: Liquid Crystal Measurement:
Part Number Ordering Information Part Number
Devices Per Reel
Reel Size
ATF-13736-TR1 ATF-13736-STR
1000 10
7" strip
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 2.5 mW/°C for TCASE > 85°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information.
ATF-13736 Noise Parameters: VDS = 2.5 V, IDS = 20 mA Γopt
Freq. GHz
NFO dB
Mag
Ang
RN/50
4.0 6.0 8.0 12.0 14.0
1.1 1.3 1.5 1.8 2.1
.71 .55 .46 .50 .52
102 147 -144 -40 -2
.10 .07 .19 .88 1.17
ATF-13736 Typical Performance, TA = 25°C 25
16
25
2.0
8
1.5
6
20
MSG
MSG
15 MAG
10
NFO
GAIN (dB)
NFO (dB)
10
20
GAIN (dB)
12
GA
GA (dB)
14
15
MAG MSG
10
|S21|2
|S21|2
1.0
5
5
0.5 0 6.0
8.0
10.0
12.0 14.0 16.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25°C.
0 2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA.
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0 2.0
4.0
6.0
8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA.
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS␣ =␣ 20 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0
S11 Mag. .94 .86 .84 .77 .68 .59 .54 .56 .58 .60 .64 .68 .70 .72 .74
Ang. -46 -70 -90 -110 -135 -170 149 112 86 63 39 20 9 -1 -17
dB 11.0 10.2 9.8 9.6 9.9 9.9 9.5 8.8 8.1 7.6 7.0 6.4 6.0 5.2 4.6
S21 Mag. 3.56 3.23 3.08 3.02 3.14 3.13 2.99 2.75 2.53 2.41 2.24 2.08 1.99 1.83 1.70
Ang. 128 109 91 69 51 24 -1 -22 -43 -66 -90 -106 -130 -145 -177
dB -26.4 -25.2 -23.1 -20.9 -19.3 -18.0 -17.6 -16.9 -16.4 -16.5 -17.1 -17.6 -18.0 -18.2 -18.4
S12 Mag. .048 .055 .070 .090 .109 .126 .132 .143 .152 .149 .140 .132 .126 .123 .120
S22 Ang. 55 40 31 18 7 -12 -27 -43 -58 -73 -81 -90 -97 -111 -129
Mag. .59 .57 .56 .52 .47 .39 .30 .19 .11 .09 .15 .19 .19 .15 .11
Ang. -36 -47 -55 -63 -75 -92 -112 -121 -140 92 47 21 -3 -26 -34
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 4 V, IDS␣ =␣ 40 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0
S11 Mag. .88 .76 .68 .56 .42 .37 .47 .57 .63 .69 .77 .82 .85 .83 .81
Ang. -44 -68 -90 -113 -145 161 116 90 70 51 33 21 13 1 -17
dB 13.5 13.0 12.4 12.0 11.8 11.5 10.5 9.4 8.9 7.9 7.1 6.0 5.4 4.8 4.4
S21 Mag. 4.73 4.47 4.19 4.00 3.90 3.74 3.36 2.96 2.77 2.47 2.26 2.00 1.86 1.73 1.65
Ang. 130 107 86 66 44 20 -3 -23 -41 -63 -82 -101 -117 -134 -154
A model for this device is available in the DEVICE MODELS section.
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dB -26.4 -24.9 -22.5 -21.0 -19.8 -18.6 -17.9 -17.2 -17.4 -17.7 -18.0 -18.6 -19.2 -19.7 -19.8
S12 Mag. .048 .057 .075 .089 .102 .117 .128 .138 .135 .131 .126 .118 .110 .104 .102
S22 Ang. 64 52 39 32 21 9 -5 -19 -28 -39 -52 -65 -75 -83 -103
Mag. .67 .61 .57 .52 .44 .31 .17 .05 .06 .17 .26 .35 .39 .41 .42
Ang. -28 -39 -46 -52 -61 -75 -95 -143 128 100 75 62 54 49 41
36 micro-X Package Dimensions 2.15 (0.085)
SOURCE 2.11 (0.083) DIA.
4
137
DRAIN 3
GATE 1
SOURCE 1.45 ± 0.25 (0.057 ± 0.010)
0.56 (0.022)
2
2.54 (0.100)
0.508 (0.020)
0.15 ± 0.05 (0.006 ± 0.002)
4.57 ± 0.25 0.180 ± 0.010
Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13
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