2–16 GHz General Purpose Gallium Arsenide FET ... - Datasheet catalog

nominal 0.3 micron gate length with a total gate periphery of. 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged,.
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2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884

Features • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz • Low Cost Plastic Package • Tape-and-Reel Packaging Option Available[1]

Description The ATF-26884 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range.

84 Plastic Package

This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

Electrical Specifications, TA = 25°C Symbol

Parameters and Test Conditions

Units

Min. 7.0

GSS

Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA

f = 12.0 GHz

dB

NFO GA

Optimum Noise Figure: VDS = 3 V, IDS = 10 mA Gain @ NFO: VDS = 3 V, IDS = 10 mA

f = 12.0 GHz f = 12.0 GHz

dB dB

P1 dB

Power Output @ 1 dB Gain Compression: VDS = 5 V, IDS = 30 mA

f = 12.0 GHz dBm

gm

Transconductance: VDS = 3 V, VGS = 0 V

IDSS

Saturated Drain Current: VDS = 3 V, VGS = 0 V

VP

Pinch-off Voltage: VDS = 3 V, IDS = 1 mA

Typ. Max. 9.0 2.2 6.0

15.0

18.0

mmho

15

35

mA

30

50

90

V

-3.5

-1.5

-0.5

Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

5-71

5965-8703E

ATF-26884 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG

Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature

Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 3.3 mW/°C for TCASE > 92.5°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information.

Absolute Maximum[1] +7 -4 -8 IDSS 275 175 -65 to +150

Units V V V mA mW °C °C

θjc = 300°C/W; TCH = 150°C 1␣ µm Spot Size[4]

Thermal Resistance: Liquid Crystal Measurement:

Part Number Ordering Information Part Number

Devices Per Reel

Reel Size

ATF-26884-TR1 ATF-26884-STR

1000 10

7" strip

25

25

20

20

15

MSG

10

MAG

GAIN (dB)

GAIN (dB)

ATF-26884 Typical Performance, TA = 25°C MSG

MAG

15

MSG MAG MSG

10 |S21|2

5

0 2.0

|S21|2

4.0

5

6.0

8.0 10.0 12.0 16.0

FREQUENCY (GHz)

Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 10 mA.

0 2.0

4.0

6.0

8.0 10.0 12.0 16.0

FREQUENCY (GHz)

Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 5 V, IDS = 30 mA.

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Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 10 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0

S11 Mag. .96 .91 .86 .79 .73 .67 .62 .57 .53 .52 .49 .52 .56 .60 .65 .68 .69

Ang. -36 -56 -78 -97 -113 -127 -144 -168 168 147 124 103 80 65 52 40 30

dB 6.9 7.4 7.6 7.2 6.8 6.4 6.4 6.2 5.8 5.2 4.9 4.6 4.0 3.3 2.9 2.3 1.3

S21 Mag. 2.21 2.35 2.39 2.30 2.20 2.10 2.08 2.03 1.96 1.81 1.76 1.70 1.58 1.46 1.40 1.30 1.16

Ang. 142 123 103 86 71 56 41 23 6 -10 -22 -36 -54 -72 -83 -99 -112

dB -26.6 -23.0 -20.6 -19.5 -18.9 -18.4 -17.9 -17.5 -17.3 -17.2 -17.1 -16.7 -16.3 -16.3 -16.3 -16.0 -15.9

S12 Mag. .047 .071 .093 .106 .114 .120 .128 .134 .136 .138 .140 .146 .153 .153 .153 .158 .159

S22 Ang. 64 50 36 25 16 9 1 -8 -16 -22 -26 -31 -37 -42 -48 -56 -72

Mag. .81 .77 .70 .66 .62 .61 .58 .54 .47 .41 .39 .37 .35 .35 .37 .41 .47

Ang. -25 -38 -50 -61 -70 -78 -88 -101 -116 -133 -143 -154 -171 173 132 101 87

Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 5 V, IDS␣ =␣ 30 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0

S11 Mag. .94 .87 .79 .71 .64 .57 .52 .48 .48 .48 .49 .53 .57 .62 .70 .75 .74

Ang. -41 -65 -89 -109 -126 -142 -162 174 149 130 108 88 69 56 44 33 24

dB 9.2 9.5 9.3 8.7 8.1 7.5 7.2 6.9 6.5 5.9 5.6 5.2 4.7 4.1 3.7 3.0 2.3

S21 Mag. 2.88 2.97 2.93 2.73 2.54 2.38 2.30 2.21 2.11 1.97 1.91 1.82 1.71 1.60 1.53 1.41 1.30

Ang. 138 118 97 79 64 50 35 18 1 -14 -25 -39 -55 -75 -87 -103 -117

A model for this device is available in the DEVICE MODELS section.

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dB -30.8 -27.3 -25.5 -24.9 -24.4 -24.0 -23.1 -21.9 -20.4 -19.7 -18.1 -16.2 -15.2 -14.8 -13.8 -12.9 -13.6

S12 Mag. .029 .043 .053 .057 .060 .063 .070 .080 .095 .104 .125 .155 .173 .182 .205 .226 .210

S22 Ang. 65 51 40 35 33 31 30 28 24 22 20 18 5 -1 -16 -28 -44

Mag. .84 .80 .74 .71 .69 .69 .69 .67 .63 .57 .55 .54 .52 .52 .52 .54 .63

Ang. -23 -34 -44 -53 -60 -67 -76 -87 -100 -114 -122 -132 -146 -165 165 135 114

84 Plastic Package Dimensions 0.51 (0.020) 4

SOURCE

DRAIN

268

GATE 1 2

3

SOURCE

2.15 (0.085)



0.20 ± 0.050 (0.008 ± 0.002)

1.52 ± 0.25 (0.060 ± 0.010)

0.51 (0.020)

5.46 ± 0.25 (0.215 ± 0.010)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

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