ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32584C
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
FEATURES 1.2
• HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz
24
21
1.0
• LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
Noise Figure, NF (dB)
GA 0.8
18
0.6
15
12
0.4 NF 0.2
9
Associated Gain, GA (dB)
• VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz
6
0 2
6
4
8
10
20
30
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
PART NUMBER
NE32584C
PACKAGE OUTLINE SYMBOLS 1
PARAMETERS AND CONDITIONS
84C UNITS
NF
Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
GA 1
Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
IDSS
Saturated Drain Current, VDS = 2 V,VGS = 0 V
MIN
TYP
MAX
0.45
0.55
11.0
12.5
mA
20
60
90
VP
Pinch-off Voltage, VDS = 2 V, IDS = 100 µA
V
-2.0
-0.7
-0.2
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
µA
0.5
RTH (CH-A)
Thermal Resistance (Channel to Ambient)
°C/W
750
RTH (CH-C)
Thermal Resistance (Channel to Case)
°C/W
IGSO
Gate to Source Leakage Current, VGS = -3 V
10.0 350
Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
NE32584C ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain to Source Voltage
V
4.0
VGS
Gate to Source Voltage
V
-3.0
IDS
Drain Current
mA
IDSS
IGRF
Gate Current
µA
100
TCH
Channel Temperature
°C
TSTG
Storage Temperature
PT
Total Power Dissipation
TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, ID = 10 mA ΓOPT
FREQ.
NFOPT
GA
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
2
0.29
20.0
0.86
22
0.27
4
0.30
18.3
0.76
45
0.25
6
0.33
16.5
0.69
70
0.18
150
8
0.36
15.0
0.63
96
0.11
°C
-65 to +150
10
0.40
13.6
0.59
122
0.08
mW
165
12
0.45
12.5
0.54
147
0.04
14
0.54
12.0
0.48
171
0.04
16
0.68
11.8
0.40
-165
0.05
18
0.85
11.5
0.31
-144
0.06
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES
(TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100
80
Drain Current, ID (mA)
Total Power Dissipation, PT (mW)
200
150
100
50
VGS = 0 V 60 -0.2 V 40 -0.4 V 20
-0.6 V -0.8 V
100
50
0
200
150
Drain to Source Voltage, VDS (V)
Ambient Temperature, TA (°C)
NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT
NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 24
VDS = 2 V f = 12 GHz
16
1.0
12
0.5
8
14 GA 13
Noise Figure, NF (dB)
20
GA
Associated Gain, GA (dB)
VDS = 2 V ID = 10 mA
Noise Figure, NF (dB)
3.0
1.5
12 2.0
11
1.5
10
1.0 0.5
NF
NF 0
4 1
2
4
6
8 10
Frequency, f (GHz)
14
20
30
0
10
20
Drain Current, ID (mA)
30
Associated Gain, GA (dB)
0
NE32584C TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) j50 +120˚
j100
j25
+90˚ 5
+60˚
4 +30˚
3 +150˚
j10
10
0
25
S22 20 GHz 50
2
S11 20 GHz
1
100
±180˚
S22 .1 GHz S11 .1 GHz
-j10
-j100
-j25
S12 .1 GHz S21 20 GHz
-150˚
-30˚
S12 20 GHz
Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA)
-j50
.1
.06
S21 .1 GHz
-60˚
-120˚ -90˚
NE32584C VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 0.100 0.200 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.500 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000
S11 MAG 0.999 1.001 1.000 0.995 0.977 0.954 0.922 0.881 0.842 0.805 0.769 0.739 0.711 0.659 0.642 0.619 0.598 0.578 0.559 0.539 0.525 0.506 0.480
S21 ANG
-1.7 -3.1 -7.9 -15.7 -30.9 -45.8 -60.8 -75.4 -89.5 -103.0 -115.9 -128.4 -141.4 -162.1 -169.1 177.0 162.8 148.2 131.6 112.7 91.2 67.8 42.1
MAG 4.410 4.431 4.443 4.424 4.352 4.273 4.169 4.014 3.878 3.737 3.611 3.499 3.446 3.351 3.318 3.291 3.266 3.264 3.297 3.363 3.410 3.462 3.441
S12 ANG 177.9 176.5 171.7 163.7 148.3 133.1 118.0 103.3 89.0 75.6 62.3 49.6 36.9 17.5 11.1 -2.0 -15.4 -29.0 -43.3 -58.3 -74.6 -92.5 -111.3
MAG 0.000 0.003 0.006 0.013 0.025 0.037 0.047 0.056 0.062 0.068 0.073 0.076 0.080 0.083 0.084 0.085 0.087 0.089 0.092 0.094 0.097 0.098 0.102
S22 ANG
-173.3 85.4 82.2 79.1 69.9 58.9 48.8 38.3 29.9 20.7 12.6 5.5 -2.5 -13.9 -18.0 -26.2 -34.7 -43.8 -55.2 -67.6 -81.9 -97.7 -116.8
MAG 0.528 0.525 0.524 0.523 0.518 0.511 0.501 0.486 0.475 0.466 0.460 0.457 0.451 0.431 0.425 0.415 0.409 0.404 0.389 0.361 0.324 0.282 0.218
K ANG
-1.2 -2.7 -6.4 -12.7 -25.0 -36.9 -48.7 -60.2 -71.3 -81.3 -90.3 -98.6 -106.6 -119.2 -123.4 -131.7 -139.8 -147.9 -156.8 -166.5 -177.1 173.3 162.7
MAG (dB)
0.023 -0.027 0.030 0.081 0.171 0.249 0.334 0.439 0.522 0.600 0.675 0.737 0.783 0.894 0.930 0.980 1.012 1.036 1.051 1.074 1.089 1.133 1.189
41.673 31.694 28.695 25.319 22.407 20.625 19.479 18.554 17.962 17.400 16.943 16.631 16.342 16.061 15.966 15.879 15.065 14.474 14.162 13.873 13.642 13.264 12.651
Note: 1. Gain Calculation: 2 2 2 |S21| |S21| (K ± K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used. , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 MSG = |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain
MAG =
0˚
NE32584C TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) +90˚ 10
j50 +120˚
j100
j25
+60˚
8 6
+30˚
+150˚
j10
0
4
S11 20 GHz 10
25
50 100 S22 20 GHz
2
±180˚
S11 .1 GHz
S22 .1 GHz
.02
S21 0.1 GHz
S21 20 GHz
-150˚
Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 20 mA)
0˚
-30˚
S12 20 GHz
-j100 -j50
.1
S12 0.1 GHz
-j10
-j25
.06
-120˚
-60˚
-90˚
NE32584C VDS = 2 V, IDS = 20 mA FREQUENCY
S11
(GHz)
MAG
0.100 0.200 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000
1.002 1.001 1.000 0.993 0.970 0.941 0.902 0.852 0.807 0.765 0.724 0.691 0.661 0.623 0.591 0.567 0.547 0.527 0.511 0.493 0.480 0.465 0.447
S21 ANG
-1.6 -3.3 -8.3 -16.4 -32.2 -47.6 -62.8 -77.6 -91.8 -105.2 -117.9 -130.1 -142.8 -156.1 -170.0 176.5 162.6 148.5 132.4 113.6 92.1 68.5 42.6
MAG 5.582 5.602 5.603 5.568 5.443 5.298 5.119 4.881 4.673 4.464 4.277 4.116 4.019 3.910 3.824 3.775 3.729 3.710 3.723 3.785 3.825 3.878 3.848
S12 ANG
178.0 176.3 171.3 163.0 146.9 131.3 115.9 101.0 86.6 73.2 59.8 47.2 34.6 21.7 9.2 -3.8 -17.0 -30.5 -44.5 -59.2 -75.2 -92.7 -111.2
MAG 0.002 0.003 0.006 0.012 0.022 0.033 0.043 0.050 0.057 0.062 0.067 0.071 0.075 0.079 0.082 0.085 0.086 0.090 0.092 0.095 0.098 0.099 0.103
S22
K
ANG
MAG
ANG
33.9 91.6 82.6 79.4 71.2 60.8 51.3 42.2 34.0 26.1 18.2 12.1 4.6 -2.8 -10.9 -19.1 -27.7 -36.6 -48.0 -59.8 -73.7 -89.5 -107.8
0.458 0.454 0.454 0.453 0.447 0.441 0.432 0.419 0.411 0.405 0.403 0.404 0.404 0.397 0.388 0.384 0.384 0.385 0.378 0.356 0.324 0.290 0.233
-1.4 -2.7 -6.3 -12.4 -24.4 -35.9 -47.3 -58.3 -68.8 -78.2 -86.5 -94.2 -101.4 -109.1 -117.1 -124.9 -132.5 -140.2 -149.0 -158.3 -168.1 -176.6 174.3
MAG (dB)
0.240 -0.070 0.029 0.107 0.222 0.311 0.405 0.529 0.613 0.697 0.776 0.829 0.870 0.929 0.977 1.004 1.037 1.037 1.049 1.051 1.060 1.090 1.127
34.458 32.712 29.703 26.665 23.934 22.056 20.757 19.895 19.137 18.573 18.051 17.632 17.291 16.945 16.687 16.105 15.197 14.973 14.721 14.616 14.411 14.102 13.554
Note: 1. Gain Calculation: 2 2 2 |S21| |S21| (K ± K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used. , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 MSG = MAG = |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE32584C OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84C 1.78 ± 0.2
S
1.78 ± 0.2 D
D S
0.5 ± 0.1 (ALL LEADS)
G
1.0 MIN ±0.2 (ALL LEADS)
1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right.
ORDERING INFORMATION PART NUMBER
AVAILABILITY
LEAD LENGTH
PACKAGE OUTLINE
NE32584C-S
Bulk up to 1K
1.0 mm
84C
NE32584C-T1
1K/Reel
1.0 mm
84C
NE32584C-SL
Bulk up to 1K
1.7 mm
84C-SL
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