DG201A/202 Monolithic Quad SPST CMOS Analog Switches Features
Benefits
Applications
Wide Input Range Low Distortion Switching Can Be Driven from Comparators or Op Amps Without Limiting Resistors
15-V Input Range Low Off Leakage—ID(on): 0.1 nA Low On-Resistance—rDS(on): 115 44-V Maximum Supply Ratings TTL and CMOS Compatible
Disk Drives Radar Systems Communications Systems Sample-and-Hold
Description The DG201A and DG202 are quad SPST analog switches designed to provide accurate switching over a wide range of input signals. When combining a low on-resistance and a wide signal range (15 V) with low charge-transfer these devices are well suited for industrial and military applications.
conducts equally well in both directions when on. When off these switches will block up to 30 V peak-to-peak and have a 44-V absolute maximum power supply rating.
Built on Siliconix’ high voltage metal gate process to achieve optimum switch performance, each switch
The DG201B/DG202B upgrades are recommended for new designs.
These two devices are differentiated by the type of switch actions (See Truth Table).
Functional Block Diagram and Pin Configuration Dual-In-Line and SOIC
DG201A
LCC D1 IN1 NC IN2 D2
DG201A
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V–
4
13
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Key S1 V– NC GND S4
3
2
1 20 19
4
18
5
17
6
16
7
15
8
14 9
S2 V+ NC NC S3
10 11 12 13
D4 IN4 NC IN3 D3 Top View
Top View
Truth Table DG201A
DG202
0
ON
OFF
1
OFF
ON
Logic
Logic “0” 0.8 V Logic “1” 2.4 V Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70036.
Siliconix S-52880—Rev. E, 28-Apr-97
1
DG201A/202 Ordering Information Temp Range
Package
Part Number
0 to 70_C
16-Pin Plastic DIP
–25 to 85_C
16-Pin CerDIP
DG201ABK
–40 to 85_C
16-Pin Narrow SOIC
DG201ADY
DG201ACJ DG202CJ
DG201AAK DG201AAK/883, JM38510/12302BEA –55 to 125_C
16-Pin CerDIP
7705301EA DG202AK DG202AK/883 JM38510/12302BEC
–55 to 125_C
16-Pin Sidebraze LCC-20
7705301EC 77053012A
Absolute Maximum Ratings Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . 70 mA Storage Temperature
(K, Z Suffix) . . . . . . . . . . . . . –65 to 150_C (J, Y Suffix) . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin CerDIP and Sidebrazee . . . . . . . . . . . . . . . . . . . . . . . . . . LCC-20f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
470 mW 640 mW 900 mW 750 mW
Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C f. Derate 10 mW/_C above 75_C
Schematic Diagram (Typical Channel) V+ S
V– – + V+ GND INX
D
V–
Figure 1.
2
Siliconix S-52880—Rev. E, 28-Apr-97
DG201A/202 Specificationsa Test Conditions Unless Otherwise Specified Parameter
Symbol
V = 15 V, V V– V = –15V 15V V+ VIN = 2.4 V, 0.8 Vf
A Suffix –55 to 125_C
Tempb
Typc
Mind
B, C, D Suffix
Maxd
Mind
15
–15
Maxd
Unit
15
V
Analog Switch Analog Signal Rangee
VANALOG
Full Room
–15 115
175
175
250
250
Drain-Source On-Resistance
rDS(on)
VD = 10 V V, IS = 1 mA
Source Off Leakage Current
IS(off)
VS = 14 V, VD = 14 V
Room Full
0.02
–1 –100
1 100
–5 –100
5 100
Drain Off Leakage Current
ID(off)
VD = 14 V, VS = 14 V
Room Full
0.02
–1 –100
1 100
–5 –100
5 100
Drain On Leakage Current
ID(on)
VS = VD = 14 V
Room Full
0.15
–1 –200
1 200
–5 –200
5 200
VIN = 2.4 V
Room Full
–0.0004
–1 –1
VIN = 15 V
Room Full
0.003
IINL
VIN = 0 V
Room Full
–0.0004
Turn-On Time
tON
Room
480
600
600
Turn-Off Time
tOFF
See Switchingg Time T t Circuit Test Ci it
Room
370
450
450
Room
20
Room
5
Room
5
Room
16
Room
70
Room
90
Full
W
nA
Digital Control p Current with Input Input Voltage High I tV lt Hi h
IINH
Input Current with Input Voltage Low
–1 –10 1 10
–1 –10
1 10
mA
–1 –10
Dynamic Characteristics
Charge Injection
Q
Source-Off Capacitance
CS(off)
Drain-Off Capacitance Channel On Capacitance
CD(off) CD(on) + CS(on)
Off Isolation
OIRR
Channel-to-Channel Crosstalk
XTALK
CL = 1000 pF, Vg= 0 V Rg = 0 W VS = 0 V V, VIN = 5 V V, f = 1 MHz VD = VS = 0 V, VIN = 0 V f = 1 MHz VIN = 5 V V, RL = 75 W VS = 2 V, f = 100 kHz
ns pC
pF
dB
Power Supply Positive Supply Current
I+
Negative Supply Current
I–
All Channels On or Off
Room
0.9
Room
–0.3
2 –1
2 mA
–1
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Siliconix S-52880—Rev. E, 28-Apr-97
3
DG201A/202 Typical Characteristics Charge Injection vs. Analog Voltage
rDS(on) vs. VD and Power Supply Voltage
70
300 V+ = 15 V, V– = –15 V TA = 25_C
60
TA = 25_C 250
50
5 V rDS(on) ( )
Q (pC)
40 30 QD
20 10
200 8 V
QS
0
100
–10 –20
50
–30 –15
–10
–5 0 5 10 VANALOG – Analog Voltage (V)
–25
15
rDS(on) vs. VD and Temperature
180
–15
25
V+ = 15 V, V– = –15 V VD = 14 V
10 nA
140
–5 5 15 VD – Drain Voltage (V)
Leakage vs. Temperature
100 nA
V+ = 15 V, V– = –15 V
160
1 nA 125_C
120
I S , ID
rDS(on) ( )
10 V 12 V 15 V
150
85_C
100 pA
IS(off), ID(off), ID(on)
25_C
100
10 pA 0_C
80
1 pA
–40_C –55_C
60 –15
–10
–5 0 5 VD – Drain Voltage (V)
10
0.1 pA –55 –35
15
Supply Current vs. Switching Frequency
85 105 125
Insertion Loss vs. Frequency
0.0
V+ = 15 V V– = –15 V
2
I+
LOSS (dB)
I+, I– (mA)
5 25 45 65 Temperature (_C)
2.0
6 4
–15
0 I–
1 M V+ = 15 V V– = –15 V Ref. 0.0 dBm
–2.0
1 k
See Figures 3 and 4
–4.0
–2
RL = 50 –6.0
–4 –6 1k
4
10 k 100 k f – Frequency (Hz)
1M
1k
10 k
100 k 1M f – Frequency (Hz)
10 M
Siliconix S-52880—Rev. E, 28-Apr-97
DG201A/202 Typical Characteristics (Cont’d) Crosstalk and Off Isolation vs. Frequency
Leakage Current vs. Analog Voltage
0 –20
V+ = 15 V V– = –15 V Ref. 0 dBm RL = 50
8 6 4
–60
I S , I D (pA)
X TALK , ISO (dB)
–40
10
Off Isolation –80 Crosstalk
–100
2
IS(off), ID(off)
0 ID(on)
–2
V+ = 15 V V– = –15 V TA = 25_C For ID(off), VS = –VD For IS(off), VD = – VS
–4
–120 See Figures 3 and 4
–6
–140
–8
–160 10 k
100 k 1M f – Frequency (Hz)
–10
10 M
–20
Switching Time vs. Temperature 1000 V+ = 15 V V– = –15 V VS = 2 V
900 800
700
t ON , t OFF (ns)
t ON , t OFF (ns)
800
20
Switching Time vs. Power Supply Voltage
1000 900
–15 –10 –5 0 5 10 15 VD or VS – Drain or Source Voltage (V)
600 tON 500 400
700 600 tON 500 400
tOFF
300
300
200
200
100 –55 –35 –15
5 25 45 65 Temperature (_C)
Siliconix S-52880—Rev. E, 28-Apr-97
85
105 125
100
tOFF
10
12
14 16 18 20 V+ – Positive Supply (V)
22
5
DG201A/202 Test Circuits VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. +15 V
Logic Input Switch Input
3V
V+
tr
