SST441NL/U441NL New Product
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
-1 to -6
-25
4.5
IG Typ (pA) |VGS1 - VGS2|Max (mV) -1
20
FEATURES
BENEFITS
APPLICATIONS
D D D D D D D
D External Substrate Bias—Avoids Latchup D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D High-Speed Performance D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal
D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters
Anti Latchup Capability Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 90 dB
DESCRIPTION The SST441NL is a monolithic high-speed dual JFET mounted in a single SO-8 package. This JFET is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. Pins 4 and 8 on the SST441NL and pin 4 on the U441NL part numbers enable the substrate to be connected to a positive, external bias (VDD) to avoid latchup.
The U441NL in the hermetically sealed TO-78 package is available with full military processing.
The SO-8 package provides ease of manufacturing. The symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods. TO-78
Narrow Body SOIC
S1
S1
1
8
SUBSTRATE
D1
2
7
G2
G1
3
6
D2
SUBSTRATE
4
5
S2
G2 1
D1
7
2
D2
6 3
G1
5 S2
4
CASE, SUBSTRATE
Top View Marking Codes:
Top View U441NL
SST441NL - 441NL
ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C
For applications information see AN102. Document Number: 72056 S-22526–Rev. A, 17-Feb-03
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7-1
SST441NL/U441NL New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter
Typa
Symbol
Test Conditions
Min
Max
Unit
V(BR)GSS
IG = -1 mA, VDS = 0 V
-25
-35
VGS(off)
VDS = 10 V, ID = 1 nA
-1
-3.5
VDS = 10 V, VGS = 0 V
6
15
30
mA
-1
-500
pA
Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current
Gate Operating Current Gate-Source Forward Voltage
IDSS IGSS IG VGS(F)
VGS = -15 V, VDS = 0 V
-6
-0.2
TA = 125_C VDG = 10 V, ID = 5 mA
-1
TA = 125_C IG = 1 mA , VDS = 0 V
V
nA -500
pA
-0.2
nA
0.7
V
Dynamic Common-Source Forward Transconductance
gfs
Common-Source Output Conductance
gos
Common-Source Forward Transconductance
gfs
Common-Source Output Conductance
gos
Common-Source Input Capacitance
Ciss
Common-Source Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltage
en
VDS = 10 V, ID = 5 mA f = 10 kHz
4
Differential Gate-Source Voltage
|V GS1 – V GS2|
VDG = 10 V, ID = 5 mA
7
Gate-Source Voltage Differential Change with Temperature
D|V GS1 – V GS2|
VDG = 10 V, ID = 5 mA TA = -55 to 125_C
10
VDS = 10 V, VGS = 0 V
0.98
VDS = 10 V, ID = 5 mA f = 1 kHz
0.98
VDG = 10 to 15 V, ID = 5 mA
90
4.5 VDS = 10 V, ID = 5 mA f = 1 kHz
VDS = 10 V, ID = 5 mA f = 100 MHz
6
9
mS
20
200
mS
5.5
mS
30
mS
3.5 VDS = 10 V, ID = 5 mA f = 1 MHz
pF 1 nV⁄ √Hz
Matching
Saturation Drain Current Ratioc
Transconductance Ratioc Common Mode Rejection Ratio
DT I DSS1 I DSS2 gfs1 gfs2 CMRR
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator.
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20
mV mV/_C
dB NNZ
Document Number: 72056 S-22526–Rev. A, 17-Feb-03
SST441NL/U441NL New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
Gate Leakage Current 15
20
15
13
11
gfs
10
9
5
7
IDSS
IG @ ID = 5 mA -10 nA 1 mA IG - Gate Leakage
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDG = 10 V, VGS = 0 V f = 1 kHz
-100 nA gfs - Forward Transconductance (mS)
IDSS - Saturation Drain Current (mA)
25
100 mA
-1 nA TA = 125_C -100 pA
5 mA 1 mA
-10 pA
100 mA TA = 25_C
-1 pA
IGSS @ 25_C 0
5 0
-3 -1 -2 -4 VGS(off) - Gate-Source Cutoff Voltage (V)
-0.1 pA 0
-5
5
Output Characteristics
25
25 VGS(off) = -3 V
VGS(off) = -4 V
16
VGS = 0 V
20 VGS = 0 V
ID - Drain Current (mA)
ID - Drain Current (mA)
10 15 20 VDG - Drain-Gate Voltage (V)
Output Characteristics
20
12 -0.4 V -0.8 V
8
-1.2 V 4
-2.0 V 0
4
8 12 16 VDS - Drain-Source Voltage (V)
-0.4 V 15
-0.8 V -1.2 V
10 -1.6 V -2.0 V 5
-1.6 V
0
-2.4 V -2.8 V
0 20
0
Output Characteristics
VGS = 0 V -0.2 V
3
20
-1.0 V
-1.4 V -1.6 V
1
VGS = 0 V
-0.8 V -1.2 V
6
-1.6 V 4
-2.0 V -2.4 V
2
0
-0.4 V
8
-0.8 V
-1.2 V 2
VGS(off) = -4 V
-0.6 V
ID - Drain Current (mA)
4
8 12 16 VDS - Drain-Source Voltage (V)
10
-0.4 V VGS(off) = -3 V
4
Output Characteristics
5
ID - Drain Current (mA)
IGSS @ 125_C
-2.8 V
0 0
0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V)
Document Number: 72056 S-22526–Rev. A, 17-Feb-03
1
0
0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V)
1
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7-3
SST441NL/U441NL New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current
Transfer Characteristics 100
20 VGS(off) = -3 V
VDS = 10 V
VDG = 10 V TA = 25_C (mV)
16
12
25_C
VGS1- VGS2
ID - Drain Current (mA)
TA = -55_C
8
125_C
4
0
1 0
-0.5
-1.0
-1.5
-2.0
0.1
-2.5
Voltage Differential with Temperature vs. Drain Current
Common Mode Rejection Ratio vs. Drain Current 150 DVDG
CMRR = 20 log D
130
CMRR (dB)
( m V/ _C )
VDG = 10 V DTA = 25 to 125_C DTA = -55 to 25_C
Dt
10
VGS1
VGS2
110 DVDG = 10 - 20 V 90
D
5 - 10 V 70
50 0.1
1
10
0.1
ID - Drain Current (mA)
1
10
ID - Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
100
200
80
rDS(on) - Drain-Source On-Resistance ( Ω )
g fs R L AV + 1 ) R g L os
AV - Voltage Gain
10
ID - Drain Current (mA)
1
Assume VDD = 15 V, VDS = 5 V RL +
60
10 V ID
40
VGS(off) = -3 V
-4 V
20
0
160 VGS(off) = -3 V 120 -4 V 80
40
0 0.1
1 ID - Drain Current (mA)
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7-4
1
VGS - Gate-Source Voltage (V)
100
VGS1 - VGS2
10
10
0.1
1.0
10
ID - Drain Current (mA) Document Number: 72056 S-22526–Rev. A, 17-Feb-03
SST441NL/U441NL New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
10
5 C rss - Reverse Feedback Capacitance (pF)
C iss - Input Capacitance (pF)
f = 1 MHz 8
6
VDS = 0 V 5V
4
2
15 V
0
f = 1 MHz 4
3 VDS = 0 V 5V
2
1 15 V 0
0
-4
-12
-8
-16
-20
0
-4
-16
-20
VGS - Gate-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Output Conductance vs. Drain Current
Equivalent Input Noise Voltage vs. Frequency 20
50 VDS = 10 V f = 1 kHz
VDS = 10 V Hz
VGS(off) = -3 V
en - Noise Voltage nV /
40 gos - Output Conductance (µS)
-12
-8
30 TA = -55_C 20
25_C
10
16
12 ID @ 10 mA 8
4 VGS = 0 V 125_C 0
0 0.1
1
10
10
1k
10 k
100 k
ID - Drain Current (mA)
f - Frequency (Hz)
Common-Source Forward Transconductance vs. Drain Current
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
10 VDS = 10 V f = 1 kHz
8
6
TA = -55_C 25_C 125_C
4
2
100
rDS
200
gos
150 50 100
50 rDS @ ID = 1 mA, VGS = 0 V gos @ VDG = 10 V, VGS = 0 V, f = kHz 0
0 0.1
1 ID - Drain Current (mA)
Document Number: 72056 S-22526–Rev. A, 17-Feb-03
10
g os - Output Conductance ( m S)
rDS(on) - Drain-Source On-Resistance ( Ω )
250 VGS(off) = -3 V
gfs - Forward Transconductance (mS)
100
0 0
-1
-2
-3
-4
-5
VGS(off) - Gate-Source Cutoff Voltage (V)
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