SST441 Vishay Siliconix
Monolithic N-Channel JFET Dual
PRODUCT SUMMARY VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
–1 to –6
–25
4.5
IG Typ (pA) |VGS1 – VGS2|Max (mV) –1
20
FEATURES
BENEFITS
APPLICATIONS
D D D D D D
D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D High-Speed Performance D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal
D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters
Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 90 dB
DESCRIPTION The SST441 is a monolithic high-speed dual JFET mounted in a single SO-8 package. This JFET is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications.
The SO-8 package is available with tape-and-reel options to support automated assembly (see Packaging Information). For similar products in TO-71 packaging, see the U441 data sheet.
Narrow Body SOIC S1
1
8
NC
D1
2
7
G2
G1
3
6
D2
NC
4
5
S2
Top View
ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation :
Lead Temperature
(1/16”
from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totala . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes a. Derate 2.4 mW/_C above 25_C
For applications information see AN102. Document Number: 70250 S-04031–Rev. E, 04-Jun-01
www.vishay.com
8-1
SST441 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter
Typa
Symbol
Test Conditions
Min
Max
Unit
V(BR)GSS
IG = –1 mA, VDS = 0 V
–25
–35
VGS(off)
VDS = 10 V, ID = 1 nA
–1
–3.5
VDS = 10 V, VGS = 0 V
6
15
30
mA
–1
–500
pA
Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current
Gate Operating Current Gate-Source Forward Voltage
IDSS IGSS IG VGS(F)
VGS = –15 V, VDS = 0 V
–6
–0.2
TA = 125_C VDG = 10 V, ID = 5 mA
–1
TA = 125_C IG = 1 mA , VDS = 0 V
V
nA –500
pA
–0.2
nA
0.7
V
Dynamic Common-Source Forward Transconductance
gfs
Common-Source Output Conductance
gos
Common-Source Forward Transconductance
gfs
Common-Source Output Conductance
gos
Common-Source Input Capacitance
Ciss
Common-Source Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltage
en
VDS = 10 V, ID = 5 mA f = 10 kHz
4
Differential Gate-Source Voltage
|V GS1 – V GS2|
VDG = 10 V, ID = 5 mA
7
Gate-Source Voltage Differential Change with Temperature
D|V GS1 – V GS2|
VDG = 10 V, ID = 5 mA TA = –55 to 125_C
10
VDS = 10 V, VGS = 0 V
0.98
VDS = 10 V, ID = 5 mA f = 1 kHz
0.98
VDG = 10 to 15 V, ID = 5 mA
90
4.5 VDS = 10 V, ID = 5 mA f = 1 kHz
VDS = 10 V, ID = 5 mA f = 100 MHz
6
9
mS
20
200
mS
5.5
mS
30
mS
3.5 VDS = 10 V, ID = 5 mA f = 1 MHz
pF 1 nV⁄ √Hz
Matching
Saturation Drain Current Ratioc
Transconductance Ratioc Common Mode Rejection Ratio
DT I DSS1 I DSS2 gfs1 gfs2 CMRR
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator.
www.vishay.com
8-2
20
mV mV/_C
dB NNZ
Document Number: 70250 S-04031–Rev. E, 04-Jun-01
SST441 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
Gate Leakage Current 15
20
15
13
11
gfs
10
9
5
7
IDSS
IG @ ID = 5 mA –10 nA 1 mA IG – Gate Leakage
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDG = 10 V, VGS = 0 V f = 1 kHz
–100 nA gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
25
100 mA
–1 nA TA = 125_C –100 pA
5 mA 1 mA
–10 pA
100 mA TA = 25_C
–1 pA
IGSS @ 25_C 0
5 0
–3 –1 –2 –4 VGS(off) – Gate-Source Cutoff Voltage (V)
–0.1 pA 0
–5
5
Output Characteristics
25
25 VGS(off) = –3 V
VGS(off) = –4 V
16
VGS = 0 V
20 VGS = 0 V
ID – Drain Current (mA)
ID – Drain Current (mA)
10 15 20 VDG – Drain-Gate Voltage (V)
Output Characteristics
20
12 –0.4 V –0.8 V
8
–1.2 V 4
–2.0 V 0
4
8 12 16 VDS – Drain-Source Voltage (V)
–0.4 V 15
–0.8 V –1.2 V
10 –1.6 V –2.0 V 5
–1.6 V
0
–2.4 V –2.8 V
0 20
0
Output Characteristics
VGS = 0 V –0.2 V
3
20
–1.0 V
–1.4 V –1.6 V
1
VGS = 0 V
–0.8 V –1.2 V
6
–1.6 V 4
–2.0 V –2.4 V
2
0
–0.4 V
8
–0.8 V
–1.2 V 2
VGS(off) = –4 V
–0.6 V
ID – Drain Current (mA)
4
8 12 16 VDS – Drain-Source Voltage (V)
10
–0.4 V VGS(off) = –3 V
4
Output Characteristics
5
ID – Drain Current (mA)
IGSS @ 125_C
–2.8 V
0 0
0.2 0.4 0.6 0.8 VDS – Drain-Source Voltage (V)
Document Number: 70250 S-04031–Rev. E, 04-Jun-01
1
0
0.2 0.4 0.6 0.8 VDS – Drain-Source Voltage (V)
1
www.vishay.com
8-3
SST441 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current
Transfer Characteristics 100
20 VGS(off) = –3 V
VDS = 10 V
VDG = 10 V TA = 25_C (mV)
16
12
25_C
VGS1– VGS2
ID – Drain Current (mA)
TA = –55_C
8
125_C
4
0
1 0
–0.5
–1.0
–1.5
–2.0
0.1
–2.5
Voltage Differential with Temperature vs. Drain Current
Common Mode Rejection Ratio vs. Drain Current 150 DVDG
CMRR = 20 log D
130
CMRR (dB)
( m V/ _C )
VDG = 10 V DTA = 25 to 125_C DTA = –55 to 25_C
Dt
10
VGS1 - VGS2
110 DVDG = 10 – 20 V 90
D
5 – 10 V 70
50 0.1
1
10
0.1
ID – Drain Current (mA)
1
10
ID – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
100
200
80
rDS(on) – Drain-Source On-Resistance ( Ω )
g fs R L AV + 1 ) R g L os
AV – Voltage Gain
10
ID – Drain Current (mA)
1
Assume VDD = 15 V, VDS = 5 V RL +
60
10 V ID
40
VGS(off) = –3 V
–4 V
20
0
160 VGS(off) = –3 V 120 –4 V 80
40
0 0.1
1 ID – Drain Current (mA)
www.vishay.com
8-4
1
VGS – Gate-Source Voltage (V)
100
VGS1 – VGS2
10
10
0.1
1.0
10
ID – Drain Current (mA) Document Number: 70250 S-04031–Rev. E, 04-Jun-01
SST441 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
10
5 C rss – Reverse Feedback Capacitance (pF)
C iss – Input Capacitance (pF)
f = 1 MHz 8
6
VDS = 0 V 5V
4
2
15 V
0
f = 1 MHz 4
3 VDS = 0 V 5V
2
1 15 V 0
0
–4
–12
–8
–16
–20
0
–4
–16
–20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
Equivalent Input Noise Voltage vs. Frequency 20
50 VDS = 10 V f = 1 kHz
VDS = 10 V Hz
VGS(off) = –3 V
en – Noise Voltage nV /
40 gos – Output Conductance (µS)
–12
–8
30 TA = –55_C 20
25_C
10
16
12 ID @ 10 mA 8
4 VGS = 0 V 125_C 0
0 0.1
1
10
10
1k
10 k
100 k
ID – Drain Current (mA)
f – Frequency (Hz)
Common-Source Forward Transconductance vs. Drain Current
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
10 VDS = 10 V f = 1 kHz
8
6
TA = –55_C 25_C 125_C
4
2
100
rDS
200
gos
150 50 100
50 rDS @ ID = 1 mA, VGS = 0 V gos @ VDG = 10 V, VGS = 0 V, f = kHz 0
0 0.1
1 ID – Drain Current (mA)
Document Number: 70250 S-04031–Rev. E, 04-Jun-01
10
g os– Output Conductance ( m S)
rDS(on) – Drain-Source On-Resistance ( Ω )
250 VGS(off) = –3 V
gfs – Forward Transconductance (mS)
100
0 0
–1
–2
–3
–4
–5
VGS(off) – Gate-Source Cutoff Voltage (V)
www.vishay.com
8-5
