TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
D D D D D D D
Low rDS(on) . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability Output Clamp Voltage . . . 50 V Devices Are Cascadable Low Power Consumption
DW OR N PACKAGE (TOP VIEW)
NC VCC SER IN DRAIN0 DRAIN1 DRAIN2 DRAIN3 SRCLR G GND
description The TPIC6B595 is a monolithic, high-voltage, medium-current power 8-bit shift register designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other mediumcurrent or high-voltage loads. This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Data transfers through both the shift and storage registers on the rising edge of the shift-register clock (SRCK) and the register clock (RCK), respectively. The storage register transfers data to the output buffer when shiftregister clear (SRCLR) is high. When SRCLR is low, the input shift register is cleared. When output enable (G) is held high, all data in the output buffers is held low and all drain outputs are off. When G is held low, data from the storage register is transparent to the output buffers. When data in the output buffers is low, the DMOS-transistor outputs are off. When data is high, the DMOStransistor outputs have sink-current capability. The serial output (SER OUT) allows for cascading of the data from the shift register to additional devices.
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
NC GND SER OUT DRAIN7 DRAIN6 DRAIN5 DRAIN4 SRCK RCK GND
NC – No internal connection
logic symbol† G RCK SRCLR SRCK SER IN
9
EN3
12 8 13 3
C2 R
SRG8 C1
1D
2
4 5 6 7 14 15 16 17
2
18
DRAIN0 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 DRAIN7 SER OUT
† This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sinkcurrent capability. Each output provides a 500-mA typical current limit at TC = 25°C. The current limit decreases as the junction temperature increases for additional device protection. The TPIC6B595 is characterized for operation over the operating case temperature range of – 40°C to 125°C.
Copyright 1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
logic diagram (positive logic) G RCK SRCLR
9 12
4
D SRCK
13
D C2
C1 CLR
SER IN
5
3 D
DRAIN1
D C2
C1 CLR
6
D
DRAIN2
D C2
C1
7
CLR
D
DRAIN3
D C2
C1 CLR
14
DRAIN4
D C2
D C1 CLR
15
D
DRAIN5
D C2
C1
16
CLR
D
DRAIN6
D C2
C1
17
CLR
D
DRAIN7
D C2
C1 CLR
10, 11, 19 18
2
DRAIN0
8
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SER OUT
GND
TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
schematic of inputs and outputs EQUIVALENT OF EACH INPUT
TYPICAL OF ALL DRAIN OUTPUTS
VCC
DRAIN 50 V
Input 25 V 20 V
12 V
GND GND
absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)† Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA Continuous drain current, each output, all outputs on, ID, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA Peak drain current single output, IDM,TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 200 mH, IAS = 0.5 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE
TC ≤ 25°C POWER RATING
DW N
DERATING FACTOR ABOVE TC = 25°C
TC = 125°C POWER RATING
1389 mW
11.1 mW/°C
278 mW
1050 mW
10.5 mW/°C
263 mW
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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
recommended operating conditions Logic supply voltage, VCC High-level input voltage, VIH
MIN
MAX
4.5
5.5
UNIT V
0.85 VCC
Low-level input voltage, VIL Pulsed drain output current, TC = 25°C, VCC = 5 V (see Notes 3 and 5)
V 0.15 VCC
V
500
mA
– 500
Setup time, SER IN high before SRCK↑, tsu (see Figure 2)
20
ns
Hold time, SER IN high after SRCK↑, th (see Figure 2)
20
ns
Pulse duration, tw (see Figure 2)
40
Operating case temperature, TC
– 40
ns °C
125
electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted) PARAMETER
TEST CONDITIONS
V(BR)DSX
Drain-to-source breakdown voltage
ID = 1 mA
VSD
Source-to-drain diode forward voltage
IF = 100 mA
VOH
High-level g output voltage, g , SER OUT
VOL
Low-level output voltage, g , SER OUT
IIH IIL
MAX
IOH = – 20 µA, VCC = 4.5 V IOH = – 4 mA, VCC = 4.5 V IOL = 20 µA, VCC = 4.5 V
High-level input current
IOL = 4 mA, VCC = 5.5 V,
VCC = 4.5 V VI = VCC
Low-level input current
VCC = 5.5 V,
VI = 0
VCC = 5 5.5 5V
ICC(FRQ)
Logic supply current at frequency
fSRCK = 5 MHz,CL = 30 pF, All outputs off,
IN
Nominal current
IDSX
Off state drain current Off-state
rDS(on)
Static drain-source on-state resistance
VDS(on) = 0.5 V, IN = ID, TC = 85°C VDS = 40 V, VCC = 5.5 V
4.4
4.49
4
4.2
1
0.005
0.1
0.3
0.5
µA
–1
µA
100
All outputs on
150
300
0.4
5
VDS = 40 V, ID = 100 mA,
VCC = 5.5 V, TC = 125°C VCC = 4.5 V
ID = 100 mA, VCC = 4.5 V ID = 350 mA,
TC = 125°C,
See Notes 5 and 6 and Figures 7 and 8
V
1 20
See Notes 5, 6, and 7
V V
All outputs off
See Figures 2 and 6
UNIT V
0.85
Logic supply current
4
TYP
50
ICC
NOTES: 3. 5. 6. 7.
MIN
90
µA mA mA
0.1
5
0.15
8
4.2
5.7
6.8
9.5
µA
Ω
VCC = 4.5 V 5.5 8 Pulse duration ≤ 100 µs and duty cycle ≤ 2%. Technique should limit TJ – TC to 10°C maximum. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85°C.
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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
switching characteristics, VCC = 5 V, TC = 25°C PARAMETER
TEST CONDITIONS
tPLH tPHL
Propagation delay time, low-to-high-level output from G
tr tf
Rise time, drain output
ta trr
Reverse-recovery-current rise time
Propagation delay time, high-to-low-level output from G
MIN
TYP
CL = 30 pF,, ID = 100 mA,, See Figures 1, 2, and 9
Fall time, drain output µ , IF = 100 mA,, di/dt = 20 A/µs, See Notes 5 and 6 and Figure 3
Reverse-recovery time
MAX
UNIT
150
ns
90
ns
200
ns
200
ns
100
ns
300
NOTES: 5. Technique should limit TJ – TC to 10°C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
thermal resistance PARAMETER RθJA
TEST CONDITIONS DW package
resistance junction-to-ambient junction to ambient Thermal resistance,
MIN
90
All 8 outputs with equal power
N package
MAX 95
UNIT °C/W
PARAMETER MEASUREMENT INFORMATION 24 V
5V
7
2 8 13 Word Generator (see Note A)
3 12 9
SRCLR SRCK
5
4
3
2
1
0
DRAIN
4 –7, 14 –17
Output
G
0V 5V
SER IN
CL = 30 pF (see Note B)
RCK
5V
G
RL = 235 Ω DUT
5V 0V
ID
VCC
SER IN
6
SRCK
0V 5V
RCK
0V 5V
SRCLR
0V
GND 10, 11, 19
24 V
DRAIN1
0.5 V VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 Ω. B. CL includes probe and jig capacitance.
Figure 1. Resistive-Load Test Circuit and Voltage Waveforms
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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
PARAMETER MEASUREMENT INFORMATION 5V G 5V
50%
50% 0V
24 V tPLH
tPHL
2 8 13 Word Generator (see Note A)
3 12 9
V SRCLR CC SRCK
Output
ID
RL = 235 Ω
4 –7, 14 –17
DUT
10% tr
Output
0.5 V
tf
SWITCHING TIMES CL = 30 pF (see Note B)
RCK G
10%
DRAIN
SER IN
24 V
90%
90%
GND
5V 50%
SRCK
0V tsu
10, 11, 19
th 5V
TEST CIRCUIT
SER IN
50%
50%
0V tw INPUT SETUP AND HOLD WAVEFORMS NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 Ω. B. CL includes probe and jig capacitance.
Figure 2. Test Circuit, Switching Times, and Voltage Waveforms TP K DRAIN 0.1 A
2500 µF 250 V
Circuit Under Test
di/dt = 20 A/µs +
L = 1 mH
IF (see Note A)
25 V
IF
–
TP A
0 25% of IRM
t2 t1
t3
Driver
IRM
RG VGG (see Note B)
ta
50 Ω
trr TEST CIRCUIT
CURRENT WAVEFORM
NOTES: A. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point. B. The VGG amplitude and RG are adjusted for di/dt = 20 A/µs. A VGG double-pulse train is used to set IF = 0.1 A, where t1 = 10 µs, t2 = 7 µs, and t3 = 3 µs.
Figure 3. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode
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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
PARAMETER MEASUREMENT INFORMATION
5V
15 V tw
2 8
10.5 Ω
V SRCLR CC
3
Word Generator (see Note A)
12 9
DUT 4 –7, 14 –17 DRAIN
RCK
See Note B
0V IAS = 0.5 A
200 mH
SER IN
G
5V
Input
ID
13 SRCK
tav
ID VDS
GND
V(BR)DSX = 50 V MIN
VDS
10, 11, 19
VOLTAGE AND CURRENT WAVEFORMS
SINGLE-PULSE AVALANCHE ENERGY TEST CIRCUIT
NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω. B. Input pulse duration, tw, is increased until peak current IAS = 0.5 A. Energy test level is defined as EAS = IAS × V(BR)DSX × tav/2 = 30 mJ.
Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms
TYPICAL CHARACTERISTICS SUPPLY CURRENT vs FREQUENCY
PEAK AVALANCHE CURRENT vs TIME DURATION OF AVALANCHE 10
2.5 VCC = 5 V TC = – 40°C to 125°C
4
I CC – Supply Current – mA
IAS – Peak Avalanche Current – A
TC = 25°C
2 1
0.4
2
1.5
1
0.5 0.2
0.1 0.1
0.2
0.4
1
2
4
10
0 0.1
1
10
100
f – Frequency – MHz
tav – Time Duration of Avalanche – ms
Figure 6
Figure 5
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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
TYPICAL CHARACTERISTICS
18
VCC = 5 V See Note A
16 14
TC = 125°C
12 10 8 6
TC = 25°C
4 TC = – 40°C
2 0 0
100
200 300 400 500 ID – Drain Current – mA
600
700
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs LOGIC SUPPLY VOLTAGE
r DS(on) – Static Drain-to-Source On-State Resistance – Ω
r DS(on) – Drain-to-Source On-State Resistance – Ω
DRAIN-TO-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT
8
ID = 100 mA See Note A
7 TC = 125°C 6 5 TC = 25°C 4 3 TC = – 40°C
2 1 0 4
6 6.5 4.5 5 5.5 VCC – Logic Supply Voltage – V
Figure 7
Figure 8 SWITCHING TIME vs CASE TEMPERATURE 300
ID = 100 mA See Note A tf
Switching Time – ns
250
tr
200
tPLH
150
tPHL
100
50 – 50
– 25
0 25 50 75 100 TC – Case Temperature – °C
Figure 9 NOTE C: Technique should limit TJ – TC to 10°C maximum.
8
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125
7
TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 – JULY 1995
THERMAL INFORMATION MAXIMUM PEAK DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY
I D – Maximum Continuous Drain Current of Each Output – A
0.45 VCC = 5 V 0.4 0.35 0.3 0.25 TC = 25°C 0.2 0.15 TC = 100°C 0.1 TC = 125°C 0.05 0 1
2
3
4
5
6
7
8
N – Number of Outputs Conducting Simultaneously
I D – Maximum Peak Drain Current of Each Output – A
MAXIMUM CONTINUOUS DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY 0.5
d = 10%
0.45
d = 20% 0.4 0.35 d = 50% 0.3 0.25 d = 80% 0.2 0.15 VCC = 5 V TC = 25°C d = tw/tperiod = 1 ms/tperiod
0.1 0.05 0 1
2
3
4
5
6
7
8
N – Number of Outputs Conducting Simultaneously
Figure 10
Figure 11
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