Nanolithography by local anodisation using ... - Tranvouez Edern
applied bias voltage. these results had been related to space charge effect that ... We study the possibility of this two methods for Quantum Dots (QDs) localisation. ... size and the thermal compatibility of AFM oxide pattern for this task for both ...
Nanolithography by local anodisation using Atomic Force Microscopy on indium phosphide for optoelectronic applications We study local anodisation using Atomic Force Microscopy (AFM) on Indium Phosphite (InP). To archive this goal, we develop two methods : a standard AFM oxidation using contact mode with a constant bias and a non usual method combining intermittent contact mode and a modulated voltage. The first method results show a logarithmic growth kinetic and a linear oxide variation with applied bias voltage. these results had been related to space charge effect that limits the oxidation process (homogeneity and resolution). To reduce these limits and neutralize the space charge effect we develop the second method. We obtain an improvement in both resolution (minus 20 nm) and homogeneity. this new method offers the possibility to control the oxide pattern shape (by using 1 oxidation duration and applied bias) and high lithography velocity (upper than 10 µm.s ). These two methods had been successfully adapted on GaAs. To understand and develop the application of local anodisation, we realise electrical characterisation by using different AFM mode measurements. We used TunnellingAFM (Tuna) and Phase measurement to probe the oxide quality and Scanning Capacitance Microscopy (SCM) and Electrostatic Force Microscopy (EFM) measurement to obtain information about charge dissipation during and after the oxidation. These measurements had been used to understood the oxidation process and to show the improvement of the intermittent contact oxidation. We study the possibility of this two methods for Quantum Dots (QDs) localisation. We show the size and the thermal compatibility of AFM oxide pattern for this task for both InP and GaAS surface. In spite of clear influence of oxide pattern on GaAs, no localisation had been found during the QDs growth on both surfaces (InP et GaAs). this results give information about the localisation process and had been used to obtain localisation by ebeam lithography on InP. Key words: Atomic Force Microscopy (AFM), Indium Phosphide (InP), Gallium Arsenide (GaAs), Quantum dots (QDs), Local anodisation, Electrostatic Force Microscopy, Scanning Capacitance Microscopy (SCM), Tunnelling AFM (Tuna)
atomic force microscopy (AFM) and b) performing electrical characterization of ... microscopy (STM) the smoothing of the surface and the growth of twinning ...
Study of vibrational properties of clean and hydrogenated 6H-SiC(000) ... On the HREELS spectra, no losses are detected characteristic of Si-H and C-H bonds. ... However, we have noticed that the secondary-electron structure was strongly ...
image pairs and applications on image interpolation and creating novel views are also presented. .... iterated re-weighted least square [15]. 5 Experimentations.
The effectiveness of the approach is tested on the simple heuristic cost criterion which consists to minimize the numbers of outages in winters. The experimental ...
ing a simple grid index structure and specific queries based on the energy of the gaussian function. This method en- ables the nonparametric density estimation ...
ing a simple grid index structure and specific queries based on the energy of the gaussian function. This method en- ables the nonparametric density estimation ...
Principle: â« BFS forward exploration of boolean graph (V,E,L) starting at x â V. â« Backward propagation of stable (computed) variables. â« Distribution ...
registration of stereo images by minimizing the quadratic variation in the obtained .... nalization property of Equation (4) to the polynomials. If a30 = 1 is assumed ...
rigidities in rents imply that tax increases may not fully capitalise and thus ..... Thompson and Tsolacos (2001) document a sixfold difference in the rental ..... 22Clearly, there may be some indirect effects through, for instance, crime or educatio
Jun 20, 2009 - (CVPR'06), and a paper published at the British Machine Vision Conference, War- wick, 2007 .... A unicity constraint (winner takes all) is ...
And indeed, it is generally accepted that anaphora and presupposition resolution share many properties - so that anaphoric data might well suffice to decide ...
We propose a method of real-time implementation of an approximation of the support vector machine ... It has been proven in the literature that the SVM method.
the principle of least commitment to chose a belief function among a set of belief functions. We can use this principle when we consider the set of belief functions ...
method and optimisation algorithm. We applied the ... are merged together in order to optimise the final number ... Sum and product are logical operators.
Apr 23, 2013 - ilarly, when a depth sensor is available the scene flow can be inferred from ..... tion x, the surface motion V and the intrinsic camera matrix M.
Nov 3, 1992 - aqueous Fe polymers obtained by the partial hydrolysis of ferric nitrate and chIo ride .... discrimination for the different polyhedral associations.
evaluation â Polygon detection quality â Graphics recog- nition â Machine ... auto-vectorization capability of the products was still re- quired. Responding to this ...
The extracted graphs are matched thanks to a structural classifier, which permits graph-subgraph and exact-inexact matching. The system adaptability is.
Apr 4, 2010 - for the errors fih = Uh - Gh, Vh = Uh - Wh, where sh is the resulting ...... of spaces of harmonics Ei and of the central quantities pioc (Sh 1, pioc ...
