IRF530 IRF530FI



N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I ■ ■ ■ ■ ■ ■ ■ ■

V DSS

R DS(on)

ID

100 V 100 V

< 0.16 Ω < 0.16 Ω

16 A 11 A

TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION

3 1

3

2

1

TO-220

APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTER ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.)

2

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS Symb ol

Parameter

Value IRF530

V DS V DGR V GS

Drain-source Voltage (V GS = 0)

Unit IRF530FI

100

V

Drain- gate Voltage (R GS = 20 kΩ)

100

V

G ate-source Voltage

± 20

V

o

ID

Drain Current (continuous) at Tc = 25 C

16

11

A

ID

Drain Current (continuous) at Tc = 100 o C

11

7.8

A

Drain Current (pulsed)

64

64

A

I DM (•) P tot

o

T otal Dissipation at Tc = 25 C

90

40

W

Derating Factor

0.6

0.27

W/ C

Viso

Insulation W ithstand Voltage (DC)

T s tg

Storage T emperature

Tj

Max. O perating Junct ion T emperature

(•) Pulse width limited by safe operating area

March 1999

-

2000

o

V

-65 to 175

o

C

175

o

C

( 1) ISD ≤16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

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IRF530/FI THERMAL DATA

R thj -case R thj -amb R thc-sink Tl

Thermal Resistance Junction-case

TO-220

T O-220FI

1

3.75

Max

Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose

62.5 0.5 300

o

C/W

o

C/W C/W o C

o

AVALANCHE CHARACTERISTICS Symbo l

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%)

Parameter

16

A

E AS

Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V)

100

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS

Parameter Drain-source Breakdown Voltage

Test Con ditions I D = 250 µA

V GS = 0

I DSS

V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating

IGSS

Gate-body Leakage Current (VDS = 0)

Min.

Typ.

Max.

100

Unit V

T c = 125 oC

V GS = ± 20 V

1 10

µA µA

± 100

nA

ON (∗) Symbo l

Parameter

Test Con ditions

V GS(th)

Gate Threshold Voltage V DS = V GS

ID = 250 µA

R DS(on)

Static Drain-source On Resistance

V GS = 10V

ID = 8 A

I D(o n)

On State Drain Current

V DS > ID(o n) x R DS(on )ma x V GS = 10 V

Min.

Typ.

Max.

Unit

2

3

4

V

0.12

0.16

Ω

16

A

DYNAMIC Symbo l g f s (∗) C iss C os s C rss

2/6

Parameter

Test Con ditions

Forward Transconductance

V DS > ID(o n) x R DS(on )ma x

Input Capacitance Output Capacitance Reverse Transfer Capacitance

V DS = 25 V

f = 1 MHz

ID = 8 A V GS = 0

Min.

Typ.

5

8 950 150 50

Max.

Unit S

1300 270 70

pF pF pF

IRF530/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l

Parameter

Test Con ditions

t d(on) tr

Turn-on Time Rise Time

V DD = 50 V R G = 4.7 Ω

Qg Q gs Q gd

Total G ate Charge Gate-Source Charge Gate-Drain Charge

V DD =80 V

Min.

ID = 8 A V GS = 10 V I D =16 A V GS = 10 V

Typ.

Max.

Unit

12 20

16 28

ns ns

32 9 13

44

nC nC nC

Typ.

Max.

Unit

11 12 25

15 17 35

ns ns ns

Typ.

Max.

Unit

16 64

A A

1.6

V

SWITCHING OFF Symbo l tr (Voff) tf tc

Parameter Off-voltage Rise T ime Fall T ime Cross-over Time

Test Con ditions

Min.

V DD = 80 V I D =16 A R G = 4.7 Ω VGS = 10 V

SOURCE DRAIN DIODE Symbo l

Parameter

Test Con ditions

ISD I SDM (•)

Source-drain Current Source-drain Current (pulsed)

V SD (∗)

Forward On Voltage

I SD = 16 A

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD =16 A V DD = 30 V

t rr Q rr I RRM

Min.

V GS = 0 di/dt = 100 A/µs o Tj = 150 C

150

ns

0.8

µC

10

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

3/6

IRF530/FI

TO-220 MECHANICAL DATA mm

DIM. MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.40

4.60

0.173

0.181

C

1.23

1.32

0.048

0.051

D

2.40

2.72

0.094

D1

0.107

1.27

0.050

E

0.49

0.70

0.019

0.027

F

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

G

4.95

5.15

0.194

0.203

G1

2.4

2.7

0.094

0.106

H2

10.0

10.40

0.393

0.409

14.0

0.511

L2

16.4

L4

0.645

13.0

0.551

2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.2

6.6

0.244

0.260

L9

3.5

3.93

0.137

0.154

DIA.

3.75

3.85

0.147

0.151

D1

C

D

A

E

L5

H2

G

G1

F1

L2

F2

F

Dia.

L5

L9 L7 L6

4/6

L4

P011C

IRF530/FI

ISOWATT220 MECHANICAL DATA mm

DIM. MIN. A

4.4

inch

TYP.

MAX.

MIN.

TYP.

MAX.

4.6

0.173

0.181

B

2.5

2.7

0.098

0.106

D

2.5

2.75

0.098

0.108

E

0.4

0.7

0.015

0.027

F

0.75

1

0.030

0.039

F1

1.15

1.7

0.045

0.067

F2

1.15

1.7

0.045

0.067

G

4.95

5.2

0.195

0.204

G1

2.4

2.7

0.094

0.106

H

10

10.4

0.393

0.409

L2

16

0.630

28.6

30.6

1.126

1.204

L4

9.8

10.6

0.385

0.417

L6

15.9

16.4

0.626

0.645

L7

9

9.3

0.354

0.366

Ø

3

3.2

0.118

0.126

B

D

A

E

L3

L3 L6

F

F1

L7

F2

H

G

G1

¯

1 2 3 L2

L4

P011G

5/6

IRF530/FI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

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