BDX53E/BDX53F BDX54E/BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX53F AND BDX54F ARE SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The BDX53E, BDX53F are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX54E, BDX54FB respectively.
3 1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
NPN
BDX53E
BDX53F
PNP
BDX54E
BDX54F
V CBO
Collector-Base Voltage (I E = 0)
140
160
V CEO
Collector-Emitter Voltage (IB = 0)
140
160
V EBO
Emitter-base Voltage (I C = 0)
IC I CM IB
V
5
V
Collector Current
8
A
Collector Peak Current
12
A
Base Current
0.2
A
o
P tot
T otal Dissipation at Tc ≤ 25 C
T s tg
Storage T emperature
Tj
V
Max. Operating Junction T emperature
October 1995
60
W
-65 to 150
o
C
150
o
C 1/4
BDX53E/53F-BDX54E/54F THERMAL DATA R thj -ca se R thj- amb
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0)
T est Con ditio ns
I C = 50 mA for BDX53E/54E for BDX53F/53F
Min .
T yp.
140 160
V V
V CE(sat) ∗
Collector-emitter Saturation Voltage
IC = 2 A
IB =10 mA
2
V
V BE(sat )∗
Base-emitter Saturation Voltage
IC = 2 A
IB =10 mA
2.5
V
h FE∗
DC Current Gain
IC = 2 A IC = 3 A
VCE = 5 V VCE = 5 V
VF ∗
Parallel Diode Forward Voltage
IF = 2 A
2.5
V
hf e ∗
Small Signal Current Gain
I C = 0.5 A f = 1MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.
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VCE = 2 V
500 150
20
BDX53E/53F-BDX54E/54F
TO-220 MECHANICAL DATA mm
DIM. MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9 L7 L6
L4
P011C
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BDX53E/53F-BDX54E/54F
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
Tst g. Storage Temperature. -65 to 200. oC. Tj. Max. Operating Junction Temperature. 200. oC. For PNP types voltage and current values are negative. 1. 2. 3.
n. HIGH GAIN n. HIGH CURRENT ... Parameter. Value. Unit ... Thermal Resistance Junction-case. Max. 1.17 ... Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
62.5. oC/W. oC/W. ELECTRICAL CHARACTERISTICS (Tcase = 25 o. C unless ... 0.8. 0.8. V. V. VBEâ. Base-Emitter Voltage. IC =2A. VCE = 2 V. 1.5. V. hFEâ.
mA. Ptot. Total Dissipation at Tcase ⤠25 oC. Tamb ⤠25 oC. 50. 2. W. W. Tstg. Storage Temperature. -65 to 150. oC. Tj. Max. Operating Junction Temperature.
Emitter Cut-off Current. (IC = 0). VEB = 5 V. 5. mA. VCEO(sus)* Collector-Emitter. Sustaining Voltage. (IB = 0). IC = 30 mA for TIP135 for TIP132/TIP137. 60. 100.
Fall time = 0.3 μs (typ) at IC = 1.0 A. ⢠VCE(sat) = 1.0 ... (IC = 0.3 Adc, IB = 30 mAdc) ... 2.54. 3.04. R. 0.080. 0.110. 2.04. 2.79. S. 0.045. 0.055. 1.15. 1.39. T. 0.235.
Collector Cut-off. Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V. 10. 10. mA. mA. ICBO. Collector Cut-off. Current (IE = 0) for 2N3771 VCB = 50 ...
SWITCH MODE POWER SUPPLIES. DESCRIPTION. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL ...
hopping conduction. Ð. Ð. Ш .... Surface Adsorption species adsorbed are and site surface free a represents. 2. 4. 2 ... Nucleation on Amorphous Surfaces. ( ). ÐШ.
Shallow tail states are associated with strained bonds and deep states near ... The trap energy is deep enough such that the traps are completely filled when.
