PD - 9.1351
IRF530N
PRELIMINARY
HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 100V RDS(on) = 0.11Ω ID = 15A
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Max.
Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
15 11 60 63 0.42 ±20 150 9.0 6.3 5.2 -55 to + 175
Units A W W/°C V mJ A mJ V/ns °C
300 (1.6mm from case) 10 lbf•in (1.1N•m)
Thermal Resistance Parameter RθJC RθCS RθJA
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
Typ.
Max.
Units
–––– –––– ––––
–––– 0.50 ––––
2.4 –––– 62
°C/W
IRF530N Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Min. 100 ––– ––– 2.0 6.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
––– –––
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
––– ––– –––
V(BR)DSS ∆V(BR)DSS/∆TJ
IGSS
Typ. ––– 0.12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 6.4 27 37 25
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA 0.11 Ω VGS = 10V, ID = 9.0A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 9.0A 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 9.0A 6.2 nC VDS = 80V 21 VGS = 10V, See Fig. 6 and 13 ––– VDD = 50V ––– ID = 9.0A ns ––– RG = 12Ω ––– RD = 5.5Ω, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH from package ––– 7.5 ––– and center of die contact 640 ––– VGS = 0V 160 ––– pF VDS = 25V 88 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics IS ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units –––
–––
15
–––
–––
60
––– ––– –––
––– 130 650
1.3 190 970
A
V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 9.0A, VGS = 0V TJ = 25°C, IF = 9.0A di/dt = 100A/µs
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
ISD ≤ 9.0A, di/dt ≤ 520A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C
VDD = 25V, starting T J = 25°C, L = 3.1mH RG = 25Ω, IAS = 9.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF530N 100
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH TJ = 25°C
1 0.1
1
10
A
10
4.5V
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C TJ = 175°C
10
V DS = 50V 20µs PULSE WIDTH 6
7
8
9
10
A
100
Fig 2. Typical Output Characteristics, TJ = 175oC
100
5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
1
20µs PULSE WIDTH TJ = 175°C
1 0.1
100
VDS , Drain-to-Source Voltage (V)
4
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
TOP
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
A
I D = 15A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0 -60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
IRF530N 1200
VGS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
Ciss 800
600
Coss 400
Crss 200
0 10
V DS = 80V V DS = 50V V DS = 20V
16
12
8
4
FOR TEST CIRCUIT SEE FIGURE 13
0
A 1
I D = 9.0A
0
100
VDS , Drain-to-Source Voltage (V)
10
15
20
25
30
35
40
A
45
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
5
TJ = 175°C 10
TJ = 25°C
VGS = 0V
1 0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
A
1.6
100
10µs
10
100µs
1ms
TC = 25°C TJ = 175°C Single Pulse
1 1
10ms 10
100
A 1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRF530N RD
VDS 15
VGS
D.U.T.
RG
ID, Drain Current (Amps)
12
VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
9
Fig 10a. Switching Time Test Circuit
6
3
A
0 25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50 0.20 0.10 0.05
0.1
PD M
0.02 0.01
t
0.01 0.00001
1 t2
SINGLE PULSE (THERMAL RESPONSE)
N otes : 1. D u ty fac tor D = t
1
/t
2
2. P ea k T J = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A 1
10 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRF530N 350
TOP 300
BOTTOM
ID 3.7A 6.4A 9.0A
250
200
150
100
50
0
VDD = 25V 25
50
A 75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
175
IRF530N Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
D.U.T
RG
• • • •
dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRF530N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A-
-B4.69 (.185) 4.20 (.165)
1.32 (.052) 1.22 (.048)
6.47 (.255) 6.10 (.240)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1
2
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
3
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.36 (.014)
3X M
B A M
0.55 (.022) 0.46 (.018)
2.92 (.115) 2.64 (.104)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information TO-220AB EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M
A
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER IRF1010 9246 9B 1M
DATE CODE (YYWW) YY = YEAR WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 9/95
